. ff UG1001UG1005 VISHAY Vishay Lite-On Power Semiconductor 1.0A UltraFast Glass Passivated Rectifiers Features Glass passivated die construction Diffused junction Ultrafast switching for high efficiency High current capability and low forward voltage drop Surge overload rating to 30A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V-0 94 9369 Absolute Maximum Ratings Tj = 25C epetitive peak reverse voltage =Working peak reverse voltage UG1002 100 Vv =DC Blocking voltage UG1003 200 V UG1004 400 Vv UG1005 600 Vv Peak forward surge current lesm 30 A Average forward current Ta=55C lFay 1 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C pe Forward voltage IrF=1A UG10011003 Ve 1.0 Vv UG1004 Ve 1.3 Vv UG1005 Ve 1.7 Vv Reverse current Tp=25C IR 5.0 | pA Ta=100C IR 100 | pA Reverse recovery time ||l-F=1A, IR=0.5A, UG10011004 ter 50 ns I1=0.25A UG1005 tie 75 | ns Diode capacitance VpR=4V, f=1MHz UG10011004 Cp 20 pF UG1005 Cp 10 pF Thermal resistance RthJA 95 KAW junction to ambient Rev. A2, 24-Jun-98 1 (4)UG1001UG1005 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) ~ 1.0 Single phase half-wave x 30 Tj= 55C << 60 Hz resistive or inductive load > ~= c o g 08 8 6 > 20 oD 2 06 5 N o n N ic 5 \ o 04 = NN o & 10 . o x INN Z 02 N c DN 2 I, 8.3 ms Single Half-Sine-Wave NA as o JEDEC method nN 0 _ 0 po 1 25 50 75 100 125 150 175 200 1 10 100 15413 Tamb Ambient Temperature ( C ) 15415 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 100 UG1001 UG1003 10 ~ = UG1004 a < = = 3 UG1001 UG 1004 g i 5 10 4s o o 2 o 10 $ UG1005 9 8 Ww = yO ao LL I _ a T= 25C 0.01 IF Pulse Width = 300 ps 1 06 08 10 12 14 16 18 20 1 10 100 15414 Ve Forward Voltage ( V ) 15416 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98wa UG1001UG1005 Vishay Lite-On Power Semiconductor Dimensions in mm A B A Cc U0-41 Dim Min Max A | 25.40 - | aa B 4.06 5.21 technical drawings ( G7 0.864 according to DIN specifications 14443 UD 2.00 2.12 AUL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 0.35 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98UG1001-UG1005 = Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98