M25P10-AVMP6TG/X - Micron Technology, Inc.

December 2008 Rev 12 1/51

M25P10-A

1 Mbit, serial Flash memory, 50 MHz SPI bus interface

Features

1 Mbit of Flash memory

Page Program (up to 256 bytes) in 1.4 ms

(typical)

Sector Erase (256 Kbit) in 0.65 s (typical)

Bulk Erase (1 Mbit) in 1.7 s (typical)

2.3 to 3.6 V single supply voltage

SPI bus compatible serial interface

50 MHz Clock rate (maximum)

Deep Power-down mode 1 μA (typical)

Electronic signatures

– JEDEC standard two-byte signature

(2011h)

– RES instruction, one-byte signature (10h),

for backward compatibility

More than 20 years’ data retention

Packages

– RoHS compliant

SO8 (MN)

150 mil width

VFQFPN8 (MP)

(MLP8)

UFDFPN8 (MB)

2x3mm

www.numonyx.com

Contents M25P10-A
2/51   
Contents
Description . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . .  . . . . . .  . . 6
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . 8
1 Serial Data output (Q)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
2 Serial Data input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
3 Serial Clock (C)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
4 Chip Select (S)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
5 Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
6 Write Protect (W)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
SPI modes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Operating features   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1 Page Programming   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
2 Sector Erase and Bulk Erase  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3 Polling during a Write, Program or Erase cycle  . . . . . . . . . . . . . . . . . . . . .11
4 Active Power, Standby Power and Deep Power-down modes . . . . . . . . . .11
5 Status Register  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
6 Protection modes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
7 Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
Memory organization  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Instructions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
1 Write Enable (WREN)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
2 Write Disable (WRDI)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
3 Read Identification (RDID)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
4 Read Status Register (RDSR)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
4.1 WIP bit  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2 WEL bit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.3 BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.4 SRWD bit  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5 Write Status Register (WRSR)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  22

M25P10-A Contents
 3/51
6 Read Data Bytes (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
7 Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . .  25
8 Page Program (PP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
9 Sector Erase (SE)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  28
10 Bulk Erase (BE)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  29
11 Deep Power-down (DP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  30
12 Release from Deep Power-down and Read Electronic Signature (RES) .  31
Power-up and power-down   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Part numbering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Revision history   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

List of tables M25P10-A
4/51   
List of tables
Table 1. Signal names  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Protected area sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 3. Memory organization  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 4. Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 5. Read identification (RDID) data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 6. Status Register format  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 7. Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 8. Power-up timing and VWI threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 9. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 10. Operating conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 11. Data retention and endurance  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 12. AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 13. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 14. DC characteristics (device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 15. DC characteristics (device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 16. Instruction times (device grade 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 17. Instruction times (device grade 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 18. AC characteristics (25 MHz operation, device grade 6 or 3)  . . . . . . . . . . . . . . . . . . . . . . . 40
Table 19. AC characteristics (40 MHz operation, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 20. AC characteristics (50 MHz operation, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 21. SO8 narrow – 8-lead plastic small outline, 150 mils body width,
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 22. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead, 
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 23. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead,
2 x 3 mm package mechanical data47
Table 24. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 25. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

M25P10-A List of figures
 5/51
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. SO, VFQFPN and UFDFPN8 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 4. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Hold condition activation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 6. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 7. Write Enable (WREN) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 8. Write Disable (WRDI) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 9. Read Identification (RDID) instruction sequence and data-out sequence  . . . . . . . . . . . . . 19
Figure 10. Read Status Register (RDSR) instruction sequence and data-out sequence  . . . . . . . . . . 21
Figure 11. Write Status Register (WRSR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 12. Read Data Bytes (READ) instruction sequence and data-out sequence . . . . . . . . . . . . . . 24
Figure 13. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 14. Page Program (PP) instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 15. Sector Erase (SE) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 16. Bulk Erase (BE) instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 17. Deep Power-down (DP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) instruction
sequence and data-out sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 19. Release from Deep Power-down (RES) instruction sequence . . . . . . . . . . . . . . . . . . . . . . 32
Figure 20. Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 21. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 22. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 23. Write Protect Setup and Hold timing during WRSR when SRWD=1 . . . . . . . . . . . . . . . . . 43
Figure 24. Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 25. Output timing  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 26. SO8 narrow – 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . 45
Figure 27. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 28. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead,
2 x 3 mm package outline47

Description M25P10-A

6/51

1 Description

The M25P10-A is a 1 Mbit (128 Kbit x 8) serial Flash memory, with advanced write

protection mechanisms, accessed by a high speed SPI-compatible bus.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program

instruction.

The memory is organized as 4 sectors, each containing 128 pages. Each page is 256 bytes

wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 131,072 bytes.

The whole memory can be erased using the Bulk Erase instruction, or a sector at a time,

using the Sector Erase instruction.

Figure 1. Logi c diagram

Table 1. S i g nal names

Signal name Function Direction

C Serial Clock Input

D Serial Data input Input

Q Serial Data output Output

SChip Select Input

WWrite Protect Input

HOLD Hold Input

VCC Supply voltage

VSS Ground

Logic_Diagram_M25P

VCC

HOLD

VSS

M25P10-A Description

7/51

Figure 2. SO, VFQFPN and UFDFPN8 connections

1. There is an exposed die paddle on the underside of the MLP8 packages. This is pulled, internally, to VSS,

and must not be allowed to be connected to any other voltage or signal line on the PCB.

2. See Package mechanical section for package dimensions, and how to identify pin-1.

Pin_Connections_M25

SS C

HOLDQ

Signal descriptions M25P10-A

8/51

2 Signal descriptions

2.1 Serial Dat a output (Q)

This output signal is used to transfer data serially out of the device. Data is shifted out on the

falling edge of Serial Clock (C).

2.2 Serial Data input (D)

This input signal is used to transfer data serially into the device. It receives instructions,

addresses, and the data to be programmed. Values are latched on the rising edge of Serial

Clock (C).

2.3 Serial Clock (C)

This input signal provides the timing of the serial interface. Instructions, addresses, or data

present at Serial Data input (D) are latched on the rising edge of Serial Clock (C). Data on

Serial Data output (Q) changes after the falling edge of Serial Clock (C).

2.4 Chip Select (S)

When this input signal is High, the device is deselected and Serial Data output (Q) is at high

impedance. Unless an internal Program, Erase or Write Status Register cycle is in progress,

the device will be in the Standby mode (this is not the Deep Power-down mode). Driving

Chip Select (S) Low selects the device, placing it in the Active Power mode.

After power-up, a falling edge on Chip Select (S) is required prior to the start of any

instruction.

2.5 Hold (HOLD)

The Hold (HOLD) signal is used to pause any serial communications with the device without

deselecting the device.

During the Hold condition, the Serial Data output (Q) is high impedance, and Serial Data

input (D) and Serial Clock (C) are Don’t care.

To start the Hold condition, the device must be selected, with Chip Select (S) driven Low.

2.6 Wr ite Pr otect (W)

The main purpose of this input signal is to freeze the size of the area of memory that is

protected against program or erase instructions (as specified by the values in the BP1 and

BP0 bits of the Status Register).

M25P10-A SPI modes

9/51

3 SPI modes

These devices can be driven by a microcontroller with its SPI peripheral running in either of

the two following modes:

CPOL=0, CPHA=0

CPOL=1, CPHA=1

For these two modes, input data is latched in on the rising edge of Serial Clock (C), and

output data is available from the falling edge of Serial Clock (C).

The difference between the two modes, as shown in Figure 4, is the clock polarity when the

bus master is in Standby mode and not transferring data:

C remains at 0 for (CPOL=0, CPHA=0)

C remains at 1 for (CPOL=1, CPHA=1)

Figure 3. Bus master and memory de vices on the SPI bus

1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.

Figure 3 shows an example of three devices connected to an MCU, on an SPI bus. Only

one device is selected at a time, so only one device drives the Serial Data output (Q) line at

a time, the other devices are high impedance. Resistors R (represented in Figure 3) ensure

that the M25P10-A is not selected if the Bus Master leaves the S line in the high impedance

state. As the Bus Master may enter a state where all inputs/outputs are in high impedance at

the same time (for example, when the Bus Master is reset), the clock line (C) must be

connected to an external pull-down resistor so that, when all inputs/outputs become high

impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S and

C do not become High at the same time, and so, that the tSHCH requirement is met). The

typical value of R is 100 kΩ, assuming that the time constant R*Cp (Cp = parasitic

capacitance of the bus line) is shorter than the time during which the Bus Master leaves the

SPI bus in high impedance.

AI12836b

SPI bus master

SPI memory

device

SDO

SDI

SCK

CQD

SPI memory

device

CQD

SPI memory

device

CQD

CS3 CS2 CS1

SPI interface with

(CPOL, CPHA) =

(0, 0) or (1, 1)

WHOLD WHOLD WHOLD

RR R

VCC

VCC VCC VCC

VSS

VSS VSS VSS

SPI modes M25P10-A

10/51

Example: Cp = 50 pF, that is R*Cp = 5 μs <=> the application must ensure that the Bus

Master never leaves the SPI bus in the high impedance state for a time period shorter than

5μs.

Figure 4. SPI modes supported

AI01438

MSB

CPHA

CPOL

MSB

M25P10-A O p erati n g fe atures

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4 Operating features

4.1 Page Programming

To program one data byte, two instructions are required: Write Enable (WREN), which is

one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This

is followed by the internal Program cycle (of duration tPP).

To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be

programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive

addresses on the same page of memory.

For optimized timings, it is recommended to use the Page Program (PP) instruction to

program all consecutive targeted bytes in a single sequence versus using several Page

Program (PP) sequences with each containing only a few bytes (see Pa ge Program (PP)

and Table 16: Instruction times (device grade 6)).

4.2 Sector Erase and Bulk Erase

The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be

applied, the bytes of memory need to have been erased to all 1s (FFh). This can be

achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the

entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of

duration tSE or tBE).

The Erase instruction must be preceded by a Write Enable (WREN) instruction.

4.3 Polling during a W rite, Program or Er ase cycle

A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase

(SE or BE) can be achieved by not waiting for the worst case delay (tW, tPP

, tSE, or tBE). The

Write In Progress (WIP) bit is provided in the Status Register so that the application program

can monitor its value, polling it to establish when the previous Write cycle, Program cycle or

Erase cycle is complete.

4.4 Active Power, Standby Power and Deep Power-down modes

When Chip Select (S) is Low, the device is selected, and in the Active Power mode.

When Chip Select (S) is High, the device is deselected, but could remain in the Active

Power mode until all internal cycles have completed (Program, Erase, Write Status

drops to ICC1.

The Deep Power-down mode is entered when the specific instruction (the Deep Power-

down (DP) instruction) is executed. The device consumption drops further to ICC2. The

device remains in this mode until another specific instruction (the Release from Deep

Power-down and Read Electronic Signature (RES) instruction) is executed.

While in the Deep Power-down mode, the device ignores all write, program and erase

instructions (see Deep Power-down (DP)). This can be used as an extra software protection

Ope rating features M25P10-A

12/51

mechanism, when the device is not in active use, to protect the device from inadvertent

write, program or erase instructions.

4.5 Status Register

The Status Register contains a number of status and control bits, as shown in Table 6, that

can be read or set (as appropriate) by specific instructions. For a detailed description of the

Status Register bits, see Secti o n 6.4: Read Statu s Register (RD SR).

4.6 Protection modes

The environments where non-volatile memory devices are used can be very noisy. No SPI

device can operate correctly in the presence of excessive noise. To help combat this, the

M25P10-A features the following data protection mechanisms:

Power On Reset and an internal timer (tPUW) can provide protection against

inadvertent changes while the power supply is outside the operating specification.

Program, Erase and Write Status Register instructions are checked that they consist of

a number of clock pulses that is a multiple of eight, before they are accepted for

execution.

All instructions that modify data must be preceded by a Write Enable (WREN)

instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state

by the following events:

– Power-up

– Write Disable (WRDI) instruction completion

– Write Status Register (WRSR) instruction completion

– Page Program (PP) instruction completion

– Sector Erase (SE) instruction completion

– Bulk Erase (BE) instruction completion

The Block Protect (BP1, BP0) bits allow part of the memory to be configured as read-

only. This is the Software Protected mode (SPM).

The Write Protect (W) signal, in co-operation with the Status Register Write Disable

(SRWD) bit, allows the Block Protect (BP1, BP0) bits and Status Register Write Disable

(SRWD) bit to be write-protected. This is the Hardware Protected mode (HPM).

In addition to the low power consumption feature, the Deep Power-down mode offers

extra software protection, as all write, program and erase instructions are ignored.

M25P10-A O p erati n g fe atures

13/51

4.7 Hold condition

The Hold (HOLD) signal is used to pause any serial communications with the device without

resetting the clocking sequence. However, taking this signal Low does not terminate any

Write Status Register, Program or Erase cycle that is currently in progress.

To enter the Hold condition, the device must be selected, with Chip Select (S) Low.

The Hold condition starts on the falling edge of the Hold (HOLD) signal, provided that this

coincides with Serial Clock (C) being Low (as shown in Figure 5).

The Hold condition ends on the rising edge of the Hold (HOLD) signal, provided that this

coincides with Serial Clock (C) being Low.

If the falling edge does not coincide with Serial Clock (C) being Low, the Hold condition

starts after Serial Clock (C) next goes Low. Similarly, if the rising edge does not coincide

with Serial Clock (C) being Low, the Hold condition ends after Serial Clock (C) next goes

Low. (This is shown in Figure 5).

During the Hold condition, the Serial Data output (Q) is high impedance, and Serial Data

input (D) and Serial Clock (C) are Don’t care.

Normally, the device is kept selected, with Chip Select (S) driven Low, for the whole duration

of the Hold condition. This is to ensure that the state of the internal logic remains unchanged

from the moment of entering the Hold condition.

If Chip Select (S) goes High while the device is in the Hold condition, this has the effect of

resetting the internal logic of the device. To restart communication with the device, it is

necessary to drive Hold (HOLD) High, and then to drive Chip Select (S) Low. This prevents

the device from going back to the Hold condition.

Table 2. Pr otected area sizes

Status

content Memory content

BP1

bit BP0

bit Protected a rea Unprotected area

0 0 none All sectors(1) (four sectors: 0, 1, 2 and 3)

1. The device is ready to accept a Bulk Erase instruction if, and only if, both Block Protect (BP1, BP0) bits are

0 1 Upper quarter (sector 3) Lower three-quarters (three sectors: 0 to 2)

1 0 Upper half (two sectors: 2 and 3) Lower half (sectors 0 and 1)

1 1 All sectors (four sectors: 0, 1, 2 and 3) none

Ope rating features M25P10-A

14/51

Figure 5. Hold condition activat ion

AI02029

HOLD

Hold

condition

(standard use)

Hold

condition

(non-standard use)

M25P10-A Memory orga ni zation

15/51

5 Memory organization

The memory is organized as:

131,072 bytes (8 bits each)

4 sectors (256 Kbits, 32768 bytes each)

512 pages (256 bytes each).

Each page can be individually programmed (bits are programmed from 1 to 0). The device is

sector or bulk erasable (bits are erased from 0 to 1) but not page erasable.

Figure 6. Block diagra m

Table 3. Memory organization

Sector Address range

3 18000h 1FFFFh

2 10000h 17FFFh

1 08000h 0FFFFh

0 00000h 07FFFh

HOLD

WControl Logic High Voltage

Generator

I/O Shift Register

Address Register

and Counter 256 byte

Data Buffer

256 bytes (page size)

X Decoder

Y Decoder

Status

00000h

08000h

10000h

18000h

1FFFFh

000FFh

Instructions M25P10-A

16/51

6 Instructions

All instructions, addresses and data are shifted in and out of the device, most significant bit

first.

Serial Data input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select

(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most

significant bit first, on Serial Data input (D), each bit being latched on the rising edges of

Serial Clock (C).

The instruction set is listed in Table 4.

Every instruction sequence starts with a one-byte instruction code. Depending on the

instruction, this might be followed by address bytes, or by data bytes, or by both or none.

Chip Select (S) must be driven High after the last bit of the instruction sequence has been

shifted in.

In the case of a Read Data Bytes (READ), Read Data Bytes at higher speed (FAST_READ),

Read Identification (RDID), Read Status Register (RDSR) or Release from Deep Power-

down, and Read Electronic Signature (RES) instruction, the shifted-in instruction sequence

is followed by a data-out sequence. Chip Select (S) can be driven High after any bit of the

data-out sequence is being shifted out.

In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status

instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the

instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when

the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of

eight.

All attempts to access the memory array during a Write Status Register cycle, Program

cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program

cycle or Erase cycle continues unaffected.

M25P10-A Instructions

17/51

6.1 Write Enable (WREN)

The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit.

The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector

Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction.

The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the

instruction code, and then driving Chip Select (S) High.

Figu r e 7. Write En ab l e (WREN) i n struction sequence

Table 4. Instruction set

Instruction Description One-byte instruction

code Address

bytes Dummy

bytes Data

bytes

WREN Write Enable 0000 0110 06h 0 0 0

WRDI Write Disable 0000 0100 04h 0 0 0

RDID(1)

1. The Read Identification (RDID) instruction is available in products with process technology code X and Y

(see application note AN1995).

Read Identification 1001 1111 9Fh 0 0 1 to 3

RDSR Read Status Register 0000 0101 05h 0 0 1 to ∞

WRSR Write Status Register 0000 0001 01h 0 0 1

READ Read Data Bytes 0000 0011 03h 3 0 1 to ∞

FAST_READ Read Data Bytes at Higher

Speed 0000 1011 0Bh 3 1 1 to ∞

PP Page Program 0000 0010 02h 3 0 1 to 256

SE Sector Erase 1101 1000 D8h 3 0 0

BE Bulk Erase 1100 0111 C7h 0 0 0

DP Deep Power-down 1011 1001 B9h 0 0 0

RES

Release from Deep Power-

down, and Read Electronic

Signature 1010 1011 ABh

0 3 1 to ∞

Release from Deep Power-

down 0 0 0

AI02281E

21 34567

High Impedance

Instruction

Instructions M25P10-A

18/51

6.2 Write Disable (WRDI)

The Write Disable (WRDI) instruction (Figure 8) resets the Write Enable Latch (WEL) bit.

The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the

instruction code, and then driving Chip Select (S) High.

The Write Enable Latch (WEL) bit is reset under the following conditions:

Power-up

Write Disable (WRDI) instruction completion

Write Status Register (WRSR) instruction completion

Page Program (PP) instruction completion

Sector Erase (SE) instruction completion

Bulk Erase (BE) instruction completion

Fig u re 8. Write Di sable (WRDI ) instru ction sequence

AI03750D

21 34567

High Impedance

Instruction

M25P10-A Instructions

19/51

6.3 Read Identification (RDID)

The Read Identification (RDID) instruction is available in products with process technology

code X and Y.

The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be

read, followed by two bytes of device identification. The manufacturer identification is

assigned by JEDEC, and has the value 20h for Numonyx. The device identification is

assigned by the device manufacturer, and indicates the memory type in the first byte (20h),

and the memory capacity of the device in the second byte (11h).

Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is

not decoded, and has no effect on the cycle that is in progress.

The Read Identification (RDID) instruction should not be issued while the device is in Deep

Power-down mode.

The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code

for the instruction is shifted in. This is followed by the 24-bit device identification, stored in

the memory, being shifted out on Serial Data output (Q), each bit being shifted out during the

falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 9.

The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at

any time during data output.

When Chip Select (S) is driven High, the device is put in the Standby Power mode. Once in

the Standby Power mode, the device waits to be selected, so that it can receive, decode and

execute instructions.

Figure 9. Read Identificatio n (RDID ) instruc tion seq uenc e and data-out sequence

Table 5. Read iden tification (RDID) data-out sequence

Manufacturer identification Device identification

Memor y typ e Memory capacity

20h 20h 11h

21 3456789101112131415

Instruction

AI06809b

Manufacturer identification

High Impedance

MSB

15 1413 3210

Device identification

MSB

16 17 18 28 29 30 31

Instructions M25P10-A

20/51

6.4 Read Status Register (RDSR)

The Read Status Register (RDSR) instruction allows the Status Register to be read. The

Status Register may be read at any time, even while a Program, Erase or Write Status

check the Write In Progress (WIP) bit before sending a new instruction to the device. It is

also possible to read the Status Register continuously, as shown in Figure 10.

The status and control bits of the Status Register are as follows:

6.4.1 WIP bit

The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status

‘0’ no such cycle is in progress.

6.4.2 WEL bit

The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.

When set to ‘1’ the internal Write Enable Latch is set, when set to ‘0’ the internal Write

Enable Latch is reset and no Write Status Register, Program or Erase instruction is

accepted.

6.4.3 BP1, BP0 bits

The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be

software protected against program and erase instructions. These bits are written with the

Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP1,

BP0) bits is set to ‘1’, the relevant memory area (as defined in Table 2) becomes protected

against Page Program (PP) and Sector Erase (SE) instructions. The Block Protect (BP1,

BP0) bits can be written provided that the Hardware Protected mode has not been set. The

Bulk Erase (BE) instruction is executed if, and only if, both Block Protect (BP1, BP0) bits are

6.4.4 SRWD bit

The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write

Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W)

signal allow the device to be put in the Hardware Protected mode (when the Status Register

Write Disable (SRWD) bit is set to ‘1’, and Write Protect (W) is driven Low). In this mode, the

Table 6. Status Re g ister format

b7 b0

SRWD 0 0 0 BP1 BP0 WEL WIP

Status Register Write Protect

Block Protect bits

Write Enable Latch bit

Write In Progress bit

M25P10-A Instructions

21/51

non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the

Write Status Register (WRSR) instruction is no longer accepted for execution.

Figure 10. Read Status Regist er (RDSR) instruction sequence and data-out

sequence

21 3456789101112131415

Instruction

AI02031E

Q76543210

Status Register Out

High Impedance

MSB

76543210

Status Register Out

MSB

Instructions M25P10-A

22/51

6.5 Write Status Re giste r (WRSR )

The Write Status Register (WRSR) instruction allows new values to be written to the Status

have been executed. After the Write Enable (WREN) instruction has been decoded and

executed, the device sets the Write Enable Latch (WEL).

The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,

followed by the instruction code and the data byte on Serial Data input (D).

The instruction sequence is shown in Figure 11.

The Write Status Register (WRSR) instruction has no effect on b6, b5, b4, b1 and b0 of the

Status Register. b6, b5 and b4 are always read as 0.

Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.

If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select

(S) is driven High, the self-timed Write Status Register cycle (whose duration is tW) is

initiated. While the Write Status Register cycle is in progress, the Status Register may still

be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)

bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. At

some unspecified time before the cycle is completed, the Write Enable Latch (WEL) is reset.

The Write Status Register (WRSR) instruction allows the user to change the values of the

Block Protect (BP1, BP0) bits, to define the size of the area that is to be treated as read-

only, as defined in Table 2. The Write Status Register (WRSR) instruction also allows the

user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the

Write Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect

(W) signal allow the device to be put in the Hardware Protected mode (HPM). The Write

Status Register (WRSR) instruction is not executed once the Hardware Protected mode

(HPM) is entered.

The protection features of the device are summarized in Table 7.

When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial

delivery state), it is possible to write to the Status Register provided that the Write Enable

Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless

of the whether Write Protect (W) is driven High or Low.

When the Status Register Write Disable (SRWD) bit of the Status Register is set to ‘1’, two

cases need to be considered, depending on the state of Write Protect (W):

If Write Protect (W) is driven High, it is possible to write to the Status Register provided

that the Write Enable Latch (WEL) bit has previously been set by a Write Enable

(WREN) instruction

If Write Protect (W) is driven Low, it is not possible to write to the Status Register even

if the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN)

instruction. (Attempts to write to the Status Register are rejected, and are not accepted

for execution). As a consequence, all the data bytes in the memory area that are

software protected (SPM) by the Block Protect (BP1, BP0) bits of the Status Register,

are also hardware protected against data modification.

M25P10-A Instructions

23/51

Regardless of the order of the two events, the Hardware Protected mode (HPM) can be

entered:

by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (W)

Low

or by driving Write Protect (W) Low after setting the Status Register Write Disable

(SRWD) bit.

The only way to exit the Hardware Protected mode (HPM) once entered is to pull Write

Protect (W) High.

If Write Protect (W) is permanently tied High, the Hardware Protected mode (HPM) can

never be activated, and only the Software Protected mode (SPM), using the Block Protect

(BP1, BP0) bits of the Status Register, can be used.

Figure 11. Write Status Register (W RSR) instruction seque nce

Table 7. Protection modes

signal SRWD

bit Mode Write protection of the

Sta tus Register

Memory conten t

Protected area(1)

1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 2.

Unprotected

area(1)

Software

protected

(SPM)

Status Register is writable (if

the WREN instruction has set

the WEL bit)

The values in the SRWD, BP1

and BP0 bits can be changed

Protected against

Page Program,

Sector Erase and

Bulk Erase

Ready to accept

Page Program

and Sector Erase

instructions

Hardware

protected

(HPM)

Status Register is hardware

write protected

The values in the SRWD, BP1

and BP0 bits cannot be

changed

Protected against

Page Program,

Sector Erase and

Bulk Erase

Ready to accept

Page Program

and Sector Erase

instructions

AI02282D

21 3456789101112131415

High Impedance

Instruction Status

765432 0

MSB

Instructions M25P10-A

24/51

6.6 Read Data Bytes (READ )

The device is first selected by driving Chip Select (S) Low. The instruction code for the Read

Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being

latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that

address, is shifted out on Serial Data output (Q), each bit being shifted out, at a maximum

frequency fR, during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 12.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read with a single Read Data Bytes (READ) instruction. When the highest

address is reached, the address counter rolls over to 000000h, allowing the read sequence

to be continued indefinitely.

The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip

Select (S) can be driven High at any time during data output. Any Read Data Bytes (READ)

instruction, while an Erase, Program or Write cycle is in progress, is rejected without having

any effects on the cycle that is in progress.

Fig u re 12. Read Data Bytes (READ) instruction seque nce and data-out sequence

1. Address bits A23 to A17 are Don’t care.

AI03748D

21 345678910 2829303132333435

2221 3210

36 37 38

76543 1 7

High Impedance Data Out 1

Instruction 24-bit address

MSB

Data Out 2

M25P10-A Instructions

25/51

6.7 Read Data Bytes at Higher Speed (FAST_READ)

The device is first selected by driving Chip Select (S) Low. The instruction code for the Read

Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-

A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).

Then the memory contents, at that address, is shifted out on Serial Data output (Q), each bit

being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 13.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)

instruction. When the highest address is reached, the address counter rolls over to

000000h, allowing the read sequence to be continued indefinitely.

The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving

Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any

Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or

Write cycle is in progress, is rejected without having any effects on the cycle that is in

progress.

Figure 13. Read Data Bytes at Higher Speed (FAST_READ) instruc tion se quenc e

and data-out sequence

1. Address bits A23 to A17 are Don’t care.

AI04006

21 345678910 28293031

2221 3210

High Impedance

Instruction 24-bit address

32 33 34 36 37 38 39 40 41 42 43 44 45 46

765432 0

DATA OUT 1

Dummy byte

MSB

76543210

DATA OUT 2

MSB MSB

765432 0

Instructions M25P10-A

26/51

6.8 Page Program (PP)

The Page Program (PP) instruction allows bytes to be programmed in the memory

(changing bits from 1 to 0). Before it can be accepted, a Write Enable (WREN) instruction

must previously have been executed. After the Write Enable (WREN) instruction has been

decoded, the device sets the Write Enable Latch (WEL).

The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by

the instruction code, three address bytes and at least one data byte on Serial Data input (D).

If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes

beyond the end of the current page are programmed from the start address of the same

page (from the address whose 8 least significant bits (A7-A0) are all zero). Chip Select (S)

must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 14.

If more than 256 bytes are sent to the device, previously latched data are discarded and the

last 256 data bytes are guaranteed to be programmed correctly within the same page. If less

than 256 Data bytes are sent to device, they are correctly programmed at the requested

addresses without having any effects on the other bytes of the same page.

For optimized timings, it is recommended to use the Page Program (PP) instruction to

program all consecutive targeted bytes in a single sequence versus using several Page

Program (PP) sequences with each containing only a few bytes (see Table 16: Instruction

times (device grade 6)).

Chip Select (S) must be driven High after the eighth bit of the last data byte has been

latched in, otherwise the Page Program (PP) instruction is not executed.

As soon as Chip Select (S) is driven High, the self-timed Page Program cycle (whose

duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register

may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress

(WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At

some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is

reset.

A Page Program (PP) instruction applied to a page which is protected by the Block Protect

(BP1, BP0) bits (see Table 3 and Table 2) is not executed.

M25P10-A Instructions

27/51

Figure 14. Page Program (PP ) inst ruct ion s equence

1. Address bits A23 to A17 are Don’t care.

AI04082B

4241 43 44 45 46 47 48 49 50 52 53 54 5540

21 345678910 2829303132333435

2221 3210

36 37 38

Instruction 24-bit address

765432 0

Data byte 1

765432 0

Data byte 2

765432 0

Data byte 3 Data byte 256

2079

2078

2077

2076

2075

2074

2073

765432 0

2072

MSB MSB

MSB MSB MSB

Instructions M25P10-A

28/51

6.9 Sector Erase (SE)

The Sector Erase (SE) instruction sets to ‘1’ (FFh) all bits inside the chosen sector. Before it

can be accepted, a Write Enable (WREN) instruction must previously have been executed.

After the Write Enable (WREN) instruction has been decoded, the device sets the Write

Enable Latch (WEL).

The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the

instruction code, and three address bytes on Serial Data input (D). Any address inside the

sector (see Table 3) is a valid address for the Sector Erase (SE) instruction. Chip Select (S)

must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 15.

Chip Select (S) must be driven High after the eighth bit of the last address byte has been

latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip

Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is

initiated. While the Sector Erase cycle is in progress, the Status Register may be read to

check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1

during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified

time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.

A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect

(BP1, BP0) bits (see Table 3 and Table 2) is not executed.

Figu r e 15. Secto r Erase (S E) instruction sequence

1. Address bits A23 to A17 are Don’t care.

24-bit address

AI03751D

21 3456789 293031

Instruction

23 22 2 0

MSB

M25P10-A Instructions

29/51

6.10 Bulk Erase (BE)

The Bulk Erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a Write

Enable (WREN) instruction must previously have been executed. After the Write Enable

(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).

The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the

instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the entire

duration of the sequence.

The instruction sequence is shown in Figure 16.

Chip Select (S) must be driven High after the eighth bit of the instruction code has been

latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)

is driven High, the self-timed Bulk Erase cycle (whose duration is tBE) is initiated. While the

Bulk Erase cycle is in progress, the Status Register may be read to check the value of the

Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk

Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the Write Enable Latch (WEL) bit is reset.

The Bulk Erase (BE) instruction is executed only if both Block Protect (BP1, BP0) bits are 0.

The Bulk Erase (BE) instruction is ignored if one, or more, sectors are protected.

Figure 16. B ulk Erase (BE) instruction sequence

AI03752D

21 345670

Instruction

Instructions M25P10-A

30/51

6.11 Deep Power-down (DP)

Executing the Deep Power-down (DP) instruction is the only way to put the device in the

lowest consumption mode (the Deep Power-down mode). It can also be used as a software

protection mechanism, while the device is not in active use, as in this mode, the device

ignores all write, program and erase instructions.

Driving Chip Select (S) High deselects the device, and puts the device in the Standby mode

(if there is no internal cycle currently in progress). But this mode is not the Deep Power-

down mode. The Deep Power-down mode can only be entered by executing the Deep

Power-down (DP) instruction, to reduce the standby current (from ICC1 to ICC2, as specified

in Table 14).

To take the device out of Deep Power-down mode, the Release from Deep Power-down and

Read Electronic Signature (RES) instruction must be issued. No other instruction must be

issued while the device is in Deep Power-down mode.

The Release from Deep Power-down, and Read Electronic Signature (RES) instruction and

the Read Identification (RDID) instruction also allow the electronic signature of the device to

be output on Serial Data output (Q).

The Deep Power-down mode automatically stops at power-down, and the device always

powers-up in the Standby mode.

The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed

by the instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the

entire duration of the sequence.

The instruction sequence is shown in Figure 17.

Chip Select (S) must be driven High after the eighth bit of the instruction code has been

latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as

Chip Select (S) is driven High, it requires a delay of tDP before the supply current is reduced

to ICC2 and the Deep Power-down mode is entered.

Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in

progress, is rejected without having any effects on the cycle that is in progress.

Figure 17. Deep Powe r-down (DP) instruction sequence

AI03753D

21 345670t

Deep Power-down mode

Standby mode

Instruction

M25P10-A Instructions

31/51

6.12 Release from Deep Power-down and Read Electronic

Signature (RES)

To take the device out of Deep Power-down mode, the Release from Deep Power-down and

Read Electronic Signature (RES) instruction must be issued. No other instruction must be

issued while the device is in Deep Power-down mode.

The instruction can also be used to read, on Serial Data output (Q), the 8-bit electronic

signature, whose value for the M25P10-A is 10h.

Except while an Erase, Program or Write Status Register cycle is in progress, the Release

from Deep Power-down and Read Electronic Signature (RES) instruction always provides

access to the 8-bit electronic signature of the device, and can be applied even if the Deep

Power-down mode has not been entered.

Any release from Deep Power-down and Read Electronic Signature (RES) instruction while

an Erase, Program or Write Status Register cycle is in progress, is not decoded, and has no

effect on the cycle that is in progress.

The device is first selected by driving Chip Select (S) Low. The instruction code is followed

by 3 dummy bytes, each bit being latched-in on Serial Data input (D) during the rising edge

of Serial Clock (C). Then, the 8-bit electronic signature, stored in the memory, is shifted out

on Serial Data output (Q), each bit being shifted out during the falling edge of Serial Clock

(C).

The instruction sequence is shown in Figure 18.

The Release from Deep Power-down and Read Electronic Signature (RES) instruction is

terminated by driving Chip Select (S) High after the electronic signature has been read at

least once. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is

driven Low, cause the electronic signature to be output repeatedly.

When Chip Select (S) is driven High, the device is put in the Standby Power mode. If the

device was not previously in the Deep Power-down mode, the transition to the Standby

Power mode is immediate. If the device was previously in the Deep Power-down mode,

though, the transition to the Standby Power mode is delayed by tRES2, and Chip Select (S)

must remain High for at least tRES2(max), as specified in Table 18. Once in the Standby

Power mode, the device waits to be selected, so that it can receive, decode and execute

instructions.

Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device,

but before the whole of the 8-bit electronic signature has been transmitted for the first time

(as shown in Figure 19), still ensures that the device is put into Standby Power mode. If the

device was not previously in the Deep Power-down mode, the transition to the Standby

Power mode is immediate. If the device was previously in the Deep Power-down mode,

though, the transition to the Standby Power mode is delayed by tRES1, and Chip Select (S)

must remain High for at least tRES1(max), as specified in Table 18. Once in the Standby

Power mode, the device waits to be selected, so that it can receive, decode and execute

instructions.

Instructions M25P10-A

32/51

Figure 18. Release from Deep Power -dow n and Read Elect roni c Sign atu re (RES ) instruction

sequence and data-out sequence

1. The value of the 8-bit electronic signature, for the M25P10-A, is 10h.

Figure 19. Release from Deep Power-down (RES) instruction sequence

AI04047C

21 345678910 2829303132333435

2221 3210

36 37 38

765432 0

High Impedance Electronic signature Out

Instruction 3 dummy bytes

MSB

Standby mode

Deep power-down mode

MSB

tRES2

AI04078B

21 345670t

RES1

Standby mode

Deep power-down mode

QHigh Impedance

Instruction

M25P10-A Power-up and power-down

33/51

7 Power-up and power-down

At power-up and power-down, the device must not be selected (that is Chip Select (S) must

follow the voltage applied on VCC) until VCC reaches the correct value:

VCC(min) at power-up, and then for a further delay of tVSL

VSS at power-down

A safe configuration is provided in Section 3: SPI modes.

To avoid data corruption and inadvertent write operations during power-up, a Power On

Reset (POR) circuit is included. The logic inside the device is held reset while VCC is less

than the Power On Reset (POR) threshold voltage, VWI – all operations are disabled, and

the device does not respond to any instruction.

Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Sector Erase

(SE), Bulk Erase (BE) and Write Status Register (WRSR) instructions until a time delay of

tPUW has elapsed after the moment that VCC rises above the VWI threshold. However, the

correct operation of the device is not guaranteed if, by this time, VCC is still below VCC(min).

No Write Status Register, Program or Erase instructions should be sent until the later of:

tPUW after VCC passed the VWI threshold

tVSL after VCC passed the VCC(min) level

These values are specified in Table 8.

If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be

selected for read instructions even if the tPUW delay is not yet fully elapsed.

At power-up, the device is in the following state:

The device is in the Standby mode (not the Deep Power-down mode).

The Write Enable Latch (WEL) bit is reset.

The Write In Progress (WIP) bit is reset.

Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply.

Each device in a system should have the VCC rail decoupled by a suitable capacitor close to

the package pins. (Generally, this capacitor is of the order of 0.1 μF).

At power-down, when VCC drops from the operating voltage, to below the Power On Reset

(POR) threshold voltage, VWI, all operations are disabled and the device does not respond

to any instruction (the designer needs to be aware that if a power-down occurs while a

Write, Program or Erase cycle is in progress, some data corruption can result).

Power-up and power-down M25P10-A

34/51

Figure 20. Powe r-up timi ng

Table 8. Power-up timi ng and VWI threshold

Symbol Parameter Min Max Unit

tVSL(1)

1. These parameters are characterized only.

VCC(min) to S low 10 μs

tPUW(1) Time delay to write instruction 1 10 ms

VWI(1) Write Inhibit voltage (device grade 6) 1 2 V

VWI(1) Write Inhibit voltage (device grade 3) 1 2.2 V

VCC

AI04009C

VCC(min)

VWI

Reset state

of the

device

Chip selection not allowed

Program, erase and write commands are rejected by the device

tVSL

tPUW

time

Read access allowed Device fully

accessible

VCC(max)

M25P10-A Initia l d eli v ery s tate

35/51

8 Initial delivery state

The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte

contains FFh). The Status Register contains 00h (all Status Register bits are 0).

9 Maximum rating

Stressing the device above the rating listed in Table 9: Absolute maximum r atings may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the operating sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability. Refer also to the Numonyx SURE Program

and other relevant quality documents.

Table 9. Absolu te maximu m ratings

Symbol Parameter Min Max Unit

TSTG Storage temperature –65 150 °C

TLEAD Lead temperature during soldering see (1)

1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx RoHS

compliant 7191395 specification, and the European directive on Restrictions on Hazardous Substances

(RoHS) 2002/95/EU.

VIO Input and output voltage (with respect to ground) –0.6 VCC +0.6 V

VCC Supply voltage –0.6 4.0 V

VESD Electrostatic discharge voltage (Human Body model)(2)

2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω).

–2000 2000 V

DC and AC parameters M25P10-A

36/51

10 DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristic tables that

follow are derived from tests performed under the measurement conditions summarized in

the relevant tables. Designers should check that the operating conditions in their circuit

match the measurement conditions when relying on the quoted parameters.

1. Output Hi-Z is defined as the point where data out is no longer driven.

Fig u re 21. AC me asurement I/O waveform

Table 10. Operat ing conditions

Symbol Parameter Min Max Unit

VCC Supply voltage 2.3(1)

1. Only in products with process technology code Y. In products with process technology code X, Vcc(min) is

2.7 V.

3.6 V

Ambient operating temperature (device grade 6) –40 85

°C

Ambient operating temperature (device grade 3) –40 125

Table 11. Data retention and endur anc e

Parameter Condition Min Max Unit

Erase/Program

cycles

Device grade 6 100,000

cycles per sector

Device grade 3 10,000

Data retention at 55 °C 20 years

Table 12. AC measurement conditions

Symbol Parameter Min Max Unit

CLLoad capacitance 30 pF

Input rise and fall times 5 ns

Input pulse voltages 0.2VCC to 0.8VCC V

Input timing reference voltages 0.3VCC to 0.7VCC V

Output timing reference voltages VCC / 2 V

AI07455

.8VCC

.2VCC

0.7VC

0.3VC

Input and outp

timing reference leve

nput levels

0.5VC

M2 5P10-A DC and AC paramete rs

37/51

1. Sampled only, not 100% tested, at TA= 25 °C and a frequency of 25 MHz.

Table 13. Capacitance

Symbol Parameter Test condition Min Max Unit

COUT Output capacitance (Q) VOUT = 0 V 8 pF

CIN Input capacitance (other pins) VIN = 0 V 6 pF

Table 14. DC characteristics (d evice grade 6)

Symbol Parameter Test condition (in addition to

those i n Table 10)Min Max Unit

ILI Input Leakage current ± 2 μA

ILO Output Leakage current ± 2 μA

ICC1 Standby current S = VCC, VIN = VSS or VCC 50 μA

ICC2 Deep Power-down current S = VCC, VIN = VSS or VCC 5μA

ICC3 Operating current (READ)

C = 0.1VCC / 0.9.VCC at 50 MHz,

Q = open 8mA

C = 0.1VCC / 0.9.VCC at 25 MHz,

Q = open 4mA

ICC4 Operating current (PP) S = VCC 15 mA

ICC5 Operating current (WRSR) S = VCC 15 mA

ICC6 Operating current (SE) S = VCC 15 mA

ICC7 Operating current (BE) S = VCC 15 mA

VIL Input Low voltage –0.5 0.3VCC V

VIH Input High voltage 0.7VCC VCC+0.4 V

VOL Output Low voltage IOL = 1.6 mA 0.4 V

VOH Output High voltage IOH = –100 μAV

CC–0.2 V

DC and AC parameters M25P10-A

38/51

Table 15. DC characteristics (d evice grade 3) (1)

1. Only for products with process technology code X.

Symbol Parameter Test condition (in addition to

those in Table 10)Min(2)

2. Preliminary data.

Max(2) Unit

ILI Input Leakage current ± 2 μA

ILO Output Leakage current ± 2 μA

ICC1 Standby current S = VCC, VIN = VSS or VCC 100 μA

ICC2 Deep Power-down current S = VCC, VIN = VSS or VCC 50 μA

ICC3 Operating current (READ)

C = 0.1VCC / 0.9.VCC at 25 MHz,

Q = open 8mA

C = 0.1VCC / 0.9.VCC at 20 MHz,

Q = open 4mA

ICC4 Operating current (PP) S = VCC 15 mA

ICC5 Operating current (WRSR) S = VCC 15 mA

ICC6 Operating current (SE) S = VCC 15 mA

ICC7 Operating current (BE) S = VCC 15 mA

VIL Input Low voltage –0.5 0.3VCC V

VIH Input High voltage 0.7VCC VCC+0.4 V

VOL Output Low voltage IOL = 1.6 mA 0.4 V

VOH Output High voltage IOH = –100 μAV

CC–0.2 V

Table 16. Instruction times (d evice grade 6)

Tes t conditions specified in Table 10 and Table 12

Symbol Alt. Parameter Min Typ Max Unit

tWWrite Status Register cycle time 5 15 ms

tPP(1)

1. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤

256).

Page Program cycle time (256 bytes) 1.4

5ms

Page Program cycle time (n bytes) 0.4+

n*1/256(2)

2. tPP=2μs+8μs*[int(n-1)/2+1]+4μs*[int(n-1)/2]+2μs, in products with process technology code X and Y.

tSE Sector Erase cycle time 0.65 3 s

tBE Bulk Erase cycle time 1.7 6 s

M2 5P10-A DC and AC paramete rs

39/51

Table 17. Instruction times (d evice grade 3)(1)

1. Only for products with process technology code X.

Test conditions specified in Table 10 and Table 12

Symbol Alt. Parameter Min Typ(2)(3)

2. At 85 °C.

3. Preliminary data.

Max(3) Unit

tWWrite Status Register cycle time 8 15 ms

tPP(4)

4. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤

256).

Page Program cycle time (256 bytes) 1.5

5ms

Page Program cycle time (n bytes) 0.4+

n*1.1/256

tSE Sector Erase cycle time 1 3 s

tBE Bulk Erase cycle time 4.5 10 s

DC and AC parameters M25P10-A

40/51

Table 18. AC cha r acteris tics (25 MH z op eration, devi ce g rade 6 or 3)

Test conditions specified in Table 10 and Table 12

Symbol Alt. Parameter Min Typ Max Unit

fCfC

Clock frequency for the following

instructions: FAST_READ, PP, SE, BE, DP,

RES, WREN, WRDI, RDSR, WRSR

D.C. 25 MHz

fRClock frequency for READ instructions D.C. 20 MHz

tCH(1)

1. tCH + tCL must be greater than or equal to 1/ fC.

tCLH Clock High time 18 ns

tCL(1) tCLL Clock Low time 18 ns

tCLCH(2)

2. Value guaranteed by characterization, not 100% tested in production.

Clock Rise time(3) (peak to peak)

3. Expressed as a slew-rate.

0.1 V/ns

tCHCL(2) Clock Fall time(3) (peak to peak) 0.1 V/ns

tSLCH tCSS S Active Setup time (relative to C) 10 ns

tCHSL S Not Active Hold time (relative to C) 10 ns

tDVCH tDSU Data In Setup time 5 ns

tCHDX tDH Data In Hold time 5 ns

tCHSH S Active Hold time (relative to C) 10 ns

tSHCH S Not Active Setup time (relative to C) 10 ns

tSHSL tCSH S Deselect time 100 ns

tSHQZ(2) tDIS Output Disable time 15 ns

tCLQV tVClock Low to Output Valid 15 ns

tCLQX tHO Output Hold time 0 ns

tHLCH HOLD Setup time (relative to C) 10 ns

tCHHH HOLD Hold time (relative to C) 10 ns

tHHCH HOLD Setup time (relative to C) 10 ns

tCHHL HOLD Hold time (relative to C) 10 ns

tHHQX(2) tLZ HOLD to Output Low-Z 15 ns

tHLQZ(2) tHZ HOLD to Output High-Z 20 ns

tWHSL(4)

4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.

Write Protect Setup time 20 ns

tSHWL(4) Write Protect Hold time 100 ns

tDP(2) S High to Deep Power-down mode 3 μs

tRES1(2) S High to Standby mode without Read

Electronic Signature 3 or 30(5)

5. It is 30 μs in devices produced with the ‘X’ and ‘Y’ process technology (grade 3 devices are only produced

using the ‘X’ process technology). Details of how to find the process letter on the device marking are given

in the application note AN1995.

μs

tRES2(2) S High to Standby mode with Read

Electronic Signature 1.8 or 30(5) μs

M2 5P10-A DC and AC paramete rs

41/51

Table 19. AC cha r acteris tics (40 MH z op eration, devi ce g rade 6)

40 MHz avai lable for products marked sin ce week 20 of 2004, only(1)

Tes t conditio ns spec ified in Table 10 and Table 12

1. Details of how to find the date of marking are given in application note, AN1995.

Symbol Alt. Parameter Min Typ Max Unit

fCfC

Clock frequency for the following instructions:

FAST_READ, PP, SE, BE, DP, RES, WREN,

WRDI, RDSR, WRSR

D.C. 40 MHz

fRClock frequency for READ instructions D.C. 20 MHz

tCH(2)

2. tCH + tCL must be greater than or equal to 1/ fC.

tCLH Clock High time 11 ns

tCL(2) tCLL Clock Low time 11 ns

tCLCH(3)

3. Value guaranteed by characterization, not 100% tested in production.

Clock Rise time(4) (peak to peak)

4. Expressed as a slew-rate.

0.1 V/ns

tCHCL(3) Clock Fall time(4) (peak to peak) 0.1 V/ns

tSLCH tCSS S Active Setup time (relative to C) 5 ns

tCHSL S Not Active Hold time (relative to C) 5 ns

tDVCH tDSU Data In Setup time 2 ns

tCHDX tDH Data In Hold time 5 ns

tCHSH S Active Hold time (relative to C) 5 ns

tSHCH S Not Active Setup time (relative to C) 5 ns

tSHSL tCSH S Deselect time 100 ns

tSHQZ(3) tDIS Output Disable time 9 ns

tCLQV tVClock Low to Output Valid 9 ns

tCLQX tHO Output Hold time 0 ns

tHLCH HOLD Setup time (relative to C) 5 ns

tCHHH HOLD Hold time (relative to C) 5 ns

tHHCH HOLD Setup time (relative to C) 5 ns

tCHHL HOLD Hold time (relative to C) 5 ns

tHHQX(3) tLZ HOLD to Output Low-Z 9 ns

tHLQZ(3) tHZ HOLD to Output High-Z 9 ns

tWHSL(5)

5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.

Write Protect Setup time 20 ns

tSHWL(5) Write Protect Hold time 100 ns

tDP(3) S High to Deep Power-down mode 3 μs

tRES1(3) S High to Standby mode without Read

Electronic Signature 3 or 30(6)

6. It is 30 μs in devices produced with the ‘X’ and ‘Y’ process technology codes. Details of how to find the

process letter on the device marking are given in the application note AN1995.

μs

tRES2(3) S High to Standby mode with Read Electronic

Signature 1.8 or 30(6) μs

DC and AC parameters M25P10-A

42/51

Table 20. AC cha r acteris tics (50 MH z op eration, devi ce g rade 6)

50 MHz ava i lable only in produc ts wi th proce ss technology code Y(1)(2)

Tes t conditio ns spec ified in Table 10 and Table 12

1. Details of how to find the process on the device marking are given in application note AN1995.

2. 50 MHz operation is also available in products with process technology code X, but with a reduced supply

voltage range (2.7 to 3.6 V).

Symbol Alt. Parameter Min Typ Max Unit

fCfC

Clock frequency(1) for the following instructions:

FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,

RDID, RDSR, WRSR

D.C. 50 MHz

fRClock frequency for READ instructions D.C. 25 MHz

tCH(3)

3. tCH + tCL must be greater than or equal to 1/ fC.

tCLH Clock High time 9 ns

tCL(3) tCLL Clock Low time 9 ns

tCLCH(4)

4. Value guaranteed by characterization, not 100% tested in production.

Clock Rise time(5) (peak to peak)

5. Expressed as a slew-rate.

0.1 V/ns

tCHCL(4) Clock Fall time(5) (peak to peak) 0.1 V/ns

tSLCH tCSS S Active Setup time (relative to C) 5 ns

tCHSL S Not Active Hold time (relative to C) 5 ns

tDVCH tDSU Data In Setup time 2 ns

tCHDX tDH Data In Hold time 5 ns

tCHSH S Active Hold time (relative to C) 5 ns

tSHCH S Not Active Setup time (relative to C) 5 ns

tSHSL tCSH S Deselect time 100 ns

tSHQZ(4) tDIS Output Disable time 8 ns

tCLQV tVClock Low to Output Valid 8 ns

tCLQX tHO Output Hold time 0 ns

tHLCH HOLD Setup time (relative to C) 5 ns

tCHHH HOLD Hold time (relative to C) 5 ns

tHHCH HOLD Setup time (relative to C) 5 ns

tCHHL HOLD Hold time (relative to C) 5 ns

tHHQX(4) tLZ HOLD to Output Low-Z 8 ns

tHLQZ(4) tHZ HOLD to Output High-Z 8 ns

tWHSL(6)

6. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.

Write Protect Setup time 20 ns

tSHWL(6) Write Protect Hold time 100 ns

tDP(4) S High to Deep Power-down mode 3 μs

tRES1(4) S High to Standby mode without Read Electronic

Signature 30 μs

tRES2(4) S High to Standby mode with Read Electronic

Signature 30 μs

M2 5P10-A DC and AC paramete rs

43/51

Figure 22. Serial input timi ng

Figure 23. Write Prote ct Setup and Hold timing during WRSR when SRWD=1

AI01447C

MSB IN

tDVCH

High Impedance

LSB IN

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSHtCHSL

High Impedance

tWHSL tSHWL

AI07439

DC and AC parameters M25P10-A

44/51

Figure 24. Hold timing

Figure 25. Output timing

AI02032

HOLD

tCHHL

tHLCH

tHHCH

tCHHH

tHHQXtHLQZ

AI01449

LSB OUT

ADDR.

LSB IN

tSHQZ

tCH

tCL

tQLQH

tQHQL

tCLQX

tCLQV

tCLQX

tCLQV

M25P10-A Package mechanical

45/51

11 Package mechanical

In order to meet environmental requirements, Numonyx offers these devices in RoHS

compliant packages. These packages have a Lead-free second level interconnect. The

category of second level interconnect is marked on the package and on the inner box label,

in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label.

Figure 26. SO8 narrow – 8-lead plastic small outline, 150 mils body width, packag e

outline

1. Drawing is not to scale.

2. The ‘1’ that appears in the top view of the package shows the position of pin 1.

Table 21 . SO8 narrow – 8-lea d plastic small outline, 150 mils body width,

package mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 1.75 0.069

A1 0.10 0.25 0.004 0.010

A2 1.25 0.049

b 0.28 0.48 0.011 0.019

c 0.17 0.23 0.007 0.009

ccc 0.10 0.004

D 4.90 4.80 5.00 0.193 0.189 0.197

E 6.00 5.80 6.20 0.236 0.228 0.244

E1 3.90 3.80 4.00 0.154 0.150 0.157

e 1.27 – – 0.050 – –

h 0.25 0.50 0.010 0.020

k0°8°0°8°

L 0.40 1.27 0.016 0.050

L1 1.04 0.041

SO-A

ccc

h x 45˚

0.25 mm

GAUGE PLANE

Package mechanical M25P10-A

46/51

Figure 27. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,

package outline

1. Drawing is not to scale.

2. The circle in the top view of the package indicates the position of pin 1.

Table 22. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,

package mechanical data

Symbol millimeter inches

Typ Min Max Typ Min Max

A 0.85 1.00 0.033 0.039

A1 0.00 0.05 0.000 0.002

A2 0.65 0.026

A3 0.20 0.008

b 0.40 0.35 0.48 0.016 0.014 0.019

D6.00 0.236

D1 5.75 0.226

D2 3.40 3.20 3.60 0.134 0.126 0.142

E5.00 0.197

E1 4.75 0.187

E2 4.00 3.80 4.20 0.157 0.150 0.165

e1.27 0.050

L 0.60 0.50 0.75 0.024 0.020 0.029

θ12° 12°

VFQFPN-01

eE2

M25P10-A Package mechanical

47/51

Figure 28. UFDFPN8 (MLP8 ) 8 -lead ultra thin fine pitch dual flat package no lead,

2 x 3 mm package outl ine

1. Drawing is not to scale.

Table 23. UFDFPN 8 (MLP8 ) 8-lead ultra thin fine pitch dual flat package no lead,

2 x 3 mm pa ckage mec hanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 0.55 0.45 0.60 0.022 0.018 0.024

A1 0.02 0.00 0.05 0.001 0.000 0.002

b(1)

1. Dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip.

0.25 0.20 0.30 0.010 0.008 0.012

D 2.00 1.90 2.10 0.079 0.075 0.083

D2 1.60 1.50 1.70 0.063 0.059 0.067

ddd(2)

2. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from

measuring.

0.08 0.003

E 3.00 2.90 3.10 0.118 0.114 0.122

E2 0.20 0.10 0.30 0.008 0.004 0.012

e 0.50 - - 0.020 - -

L 0.45 0.40 0.50 0.018 0.016 0.020

L1 0.15 0.006

L3 0.30 0.012

UFDFPN-01

A1 ddd

Part numbering M25P10-A

48/51

12 Part numbering

For a list of available options (speed, package, etc.) or for further information on any aspect

of this device, please contact your nearest Numonyx Sales Office.

Table 24 . Ordering inform at io n scheme

Example: M25P10-A V MN 6 T P /X

Device type

M25P

Device function

10-A = 1 Mbit (128 Kbit x 8)

O per a t in g vo l tag e

V = Vcc = 2.7 to 3.6 V for /X parts

V = Vcc = 2.3 to 3.6 V for /Y parts

Package

MN = SO8 (150 mil width)

MP = VFQFPN8 (MLP8)

MB = UFDFPN8 (MLP8)

Device grade

6 = Industrial temperature range, –40 to 85 °C.

Device tested with standard test flow

3(1) = Device tested with high reliability certified flow(2).

Automotive temperature range (–40 to 125 °C)

1. Device grade 3 available in an SO8 RoHS compliant package.

2. Numonyx strongly recommends the use of the Automotive Grade devices for use in an automotive

environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801.

Please ask your nearest Numonyx Sales Office for a copy.

Option

blank = Standard packing

T = Tape & reel packing

Plating technology

blank = Standard SnPb plating

P or G = RoHS compliant

Process(3)

3. The process letter (/X) is specified in the ordering information of grade 3 devices only.

For grade 6 devices, the process letter does not appear in the ordering information, it only appears on the

device package (marking) and on the shipment box. Please contact your nearest Numonyx Sales Office.

For more information on how to identify products by the process identification letter, please refer to

AN1995: Serial Flash memory device marking.

/X = T7Y

/Y = T7Y redesigned(4)

4. Only available for grade 6 devices.

M25P10-A Revision histor y
 49/51
13 Revision history
         
Table 25. Document  revis ion history
Date Revision Changes
25-Feb-2001 1.0 Document written.
12-Sep-2002 1.1
VFQFPN8 package (MLP8) added. Clarification of descriptions of 
entering Standby Power mode from Deep Power-down mode, and of 
terminating an instruction sequence or data-out sequence.
13-Dec-2002 1.2
Typical Page Program time improved. Write Protect setup and hold times 
specified, for applications that switch Write Protect to exit the Hardware 
Protection mode immediately before a WRSR, and to enter the Hardware 
Protection mode again immediately after.
21-Feb-2003 1.3 Erroneous address ranges corrected in memory organization table.
24-Nov-2003 2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free 
options added.
40 MHz AC characteristics table included as well as 25 MHz. ICC3(max), 
tSE(typ) and tBE(typ) values improved. Change of naming for VDFPN8 
package.
08-Mar-2005 3.0
Devices with Process technology Code X added (Read Identification 
(RDID) and Table 20: AC c haracteristics  (50 MHz operation, device 
grade 6)) added. 
SO8 narrow package specifications updated. 
Notes 1 and 2 removed from Table 24: Ordering information scheme. 
Note 1 to Table 9: Absolute maximum ratings changed, note 2 removed 
and TLEAD values removed.
Small text changes. End timing line of tSHQZ modified in F igure 25: 
Output timing.
01-Apr-2005 4.0
Read Id entification (RDID), Deep Power-down (DP) and Release from 
De ep P ow er-down a nd R ead Electronic Signature (RE S) instructions, 
and Active Power, Standby Power and Deep Power-down modes 
paragraph clarified.
01-Aug-2005 5.0 Updated Page Program (PP) instructions in Page Programming, Page 
Program (PP) and Tabl e 16: I nstruction times (d evice grade 6).
14-Apr-2006 6
All packages are RoHS compliant. Grade 3 information added (see 
Table 10, Table 11, Table 15, Table 17, Table 18 and Table 24).
Figure 3: Bus  master and memory dev i ces on the SPI  bus modified and 
Note 2 added.
Table 11: Data retention and endurance added.
40MHz frequency condition modified for ICC3 in Table 14: DC 
ch aracteris tics (devic e grade 6). 
Ta bl e 14: DC characterist ics (device grade 6) shows preliminary data.
MLP package renamed as VFQFPN and specifications updated (see 
silhouette on first page, Figure 27 and Table 22). Note 2 added below 
Figure 26 and Note 2 added below Figure 27. VWI parameter for device 
grade 3 added to Tab l e 8: Power-up timing and V WI threshold.
/X Process added to Table 24: Ordering information scheme.

Revision h istory M25P10-A
50/51   
05-Jun-2006 7
tRES1 and tRES2 parameter timings changed for devices produced with 
the “X” process technology in Table 18 and Table 19.
SO8 narrow package specifications updated (see Figure 26 and 
Table 21).
06-Jul-2007 8
Changed the minimum value for supply voltage.
Added TLEAD and changed maximum value for VIO in Table 9: A bsolu te 
max i mum ratings.
Updated Section 3: SPI modes and modified Figure 3: Bus master and 
memory devices on t he SPI bus.
Note 1 to Table 13: Capacitance changed. 
Note 2 below Table 16: In st ruction times (device grade 6) added.
Changed test condition for ICC3 in Table 14 and fR in Table 20.
23-Aug-2007 9
Removed “low voltage” from the title. Small text changes.
Typical values for Sector Erase and Bulk Erase modified.
UFDFPN8 package (MLP8) added.
Added the reference to a new process technology (code “Y”). 
Added notes below Table 10: Operating conditions , Table 15: DC 
ch aracteris tics (devic e grade 3), and Tab le 17: Instructi on times (devi ce 
grade 3).
/Y process added to Table 24: Ordering information scheme.
18-Oct-2007 10 Code of the UFDFPN8 package modified.
Small text changes.
10-Dec-2007 11 Applied Numonyx branding.
15-Dec-2008 12
Added the following to Operating Voltage section of Table 24. : Ordering 
information scheme:
– V = Vcc = 2.7 to 3.6 V for /X parts
– V = Vcc = 2.3 to 3.6 V for /Y parts
Table 25. Document  revis ion history (cont inu ed)
Date Revision Changes

M25P10-A

51/51

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