1
Edition 1.3
August 2004
FLM1414-12F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
57.6
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with
gate resistance of 50Ω.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 6000 9000
- 5000 -
-0.5 -1.5 -3.0
-5 - -
4.0 5.0 -
-23-
39.5 40.5 -
VDS = 5V, IDS = 300mA
VDS = 5V, IDS = 3600mA
VDS = 5V, VGS = 0V
IGS = -340µA
VDS =10V,
IDS = 0.6 IDSS (Typ.),
f = 14.0 ~ 14.5 GHz,
ZS = ZL= 50 ohm
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 3600 4500 mA
Idsr
ηadd
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Channel to Case
Thermal Resistance - 2.3 2.6 °C/W
Rth
G.C.P.: Gain Compression Point
CASE STYLE: IB
10V x Idsr x Rth
Channel Temperature Rise --80 °C
∆Tch
DESCRIPTION
The FLM1414-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in
a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
• High Output Power: P1dB = 40.5dBm (Typ.)
• High Gain: G1dB = 5.0dB (Typ.)
• High PAE: ηadd = 23% (Typ.)
• Broad Band: 14.0 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
2
FLM1414-12F
X, Ku-Band Internally Matched FET
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
0246810
6000
4000
2000
Drain-Source Voltage
Drain Current (mA)
VGS = 0V
-0.5V
-1.0V
-2.0V
-1.5V
POWER DERATING CURVE
500 100 150 200
Case Temperature (°C)
60
45
30
15
Total Power Dissipation (W)
OUTPUT POWER vs. FREQUENCY
14.0
Pin=37dBm
29dBm
33dBm
25dBm
14.1 14.2 14.3 14.4 14.5
Frequency (GHz)
32
34
36
38
40
Output Power (dBm)
VDS=10V
f = 14.25 GHz
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
25 27 29 31 33 35 37
Input Power (dBm)
32
34
36
38
40
20
10
30
Output Power (dBm)
ηadd
Pout
ηadd (%)
3
FLM1414-12F
X, Ku-Band Internally Matched FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
13.8 GHz
14.7
14.5
14.4
14.2
14.0
13.8 GHz 13.9
14.5
14.6
14.4
14.2
14.0
25010025 50Ω
10 14.7
14.3
14.1
S11
S22
180°
SCALE FOR |S21|
SCALE FOR |S12|
+90°
0°
-90°
S21
S12
13.8 GHz
0.2
0.1
12345
13.8 GHz
14.7
14.7
14.5
14.6
14.4
14.4
14.2
14.2
14.1
13.9
14.3
14.5
14.0
14.0
14.3
S-PARAMETERS
VDS = 10V, IDS = 3600mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
13800 .376 -154.2 1.886 -80.3 .106 -87.7 .653 124.8
13900 .315 -159.6 1.917 -93.5 .110 -101.2 .620 110.8
14000 .248 -164.1 1.944 -105.8 .113 -114.7 .585 96.6
14100 .178 -165.7 1.941 -118.3 .115 -128.1 .541 82.5
14200 .104 -158.7 1.942 -131.7 .114 -141.4 .506 68.3
14300 .051 -115.7 1.928 -143.3 .114 -153.8 .472 57.2
14400 .091 -58.4 1.896 -156.3 .113 -165.0 .437 47.1
14500 .167 -46.4 1.894 -167.5 .113 -176.2 .411 38.1
14600 .247 -48.1 1.893 179.5 .115 172.8 .381 28.6
14700 .328 -52.7 1.886 166.4 .116 160.3 .338 18.6
4
FLM1414-12F
X, Ku-Band Internally Matched FET
2-R 1.6±0.15
(0.063)
0.6
(0.024)
10.7
(0.421)
12.0
(0.422)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
12.9±0.2
(0.508)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
0.2 Max.
(0.008)
1.45
(0.059)
Case Style "IB"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
5.2 Max.
(0.205)
2.6±0.15
(0.102)
0.1
(0.004)
1
2
3
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
