Document Number: 94233 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 5.5 A
VS-50WQ04FNPbF
Vishay Semiconductors
FEATURES
Popular D-PAK outline
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS Directive 2002/95/EC
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-50WQ04FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 5.5 A
VR40 V
VF at IFSee Electrical table
IRM 40 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 9 mJ
Anode
13
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 5.5 A
VRRM 40 V
IFSM tp = 5 μs sine 340 A
VF5 Apk, TJ = 125 °C 0.44 V
TJRange - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-50WQ04FNPbF UNITS
Maximum DC reverse voltage VR40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 135 °C, rectangular waveform 5.5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
550
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.5 A, L = 8 mH 9 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.2 A
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VS-50WQ04FNPbF
Vishay Semiconductors Schottky Rectifier, 5.5 A
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
5 A TJ = 25 °C 0.51
V
10 A 0.63
5 A TJ = 125 °C 0.44
10 A 0.59
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
3mA
TJ = 125 °C 40
Thereshold voltage VF(TO) TJ =TJ maximum 0.27 V
Forward slope resistance rt26.77 m
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 405 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 5.0 nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 3.0 °C/W
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 50WQ04FN
dPtot
dTJ
------------- 1
RthJA
--------------<
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VS-50WQ04FNPbF
Schottky Rectifier, 5.5 A Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
100
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0 2.22.01.81.41.2 1.6
0
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
10
0.1
0.01
100
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520 4030 35
25
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105152025 453503040
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
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VS-50WQ04FNPbF
Vishay Semiconductors Schottky Rectifier, 5.5 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
120
125
130
135
150
145
155
140
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
2134 8567
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
0.5
1.5
3.0
4.0
2.5
2.0
1.0
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
2134 8567
0
3.5
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
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VS-50WQ04FNPbF
Schottky Rectifier, 5.5 A Vishay Semiconductors
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
2- Current rating (5.5 A)
1- Vishay Semiconductors product
3- Package identifier:
W = D-PAK
4- Schottky “Q” series
5- Voltage rating (04 = 40 V)
- FN = TO-252AA (D-PAK)
6
- PbF = Lead (Pb)-free
8
7- None = Tube (50 pieces)
TR = Tape and reel
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
Device code
51 32 4 6 7 8
50VS- W Q 04 FN TRL PbF
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 05-Dec-12 1Document Number: 95016
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 10° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 15° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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