S-1170 Series
www.sii-ic.com
HIGH RIPPLE-REJECTION AND LOW DROPOUT
HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
© Seiko Instruments Inc., 2003-2010 Rev.4.0_00
Seiko Instruments Inc. 1
The S-1170 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and
low current consumption developed based on CMOS technology.
A built-in low on-resistance transistor provides a low dropout voltage and large output current, a built-in
overcurrent protector prevents the load current from exceeding the current capacitance of the output transistor,
and a built-in thermal shutdown circuit prevents damage caused by the heat. An ON/OFF circuit ensures a
long battery life. Compared with the voltage regulators using the conventional CMOS process, a larger variety
of capacitors are available, including small ceramic capacitors. Small SOT-89-5 and 6-Pin HSON(A) packages
realize high-density mounting.
Features
• Output voltage: 1.5 V to 5.5 V, selectable in 0.1 V steps.
• High-accuracy output voltage: ±1.0%
• Low dropout voltage: 120 mV typ. (3.0 V output product, IOUT = 300 mA)
• Low current consumption: During operation: 80 μA typ., 160 μA max.
During shutdown: 0.1 μA typ., 1.0 μA max.
• High current capability: 800 mA output is possible (at VIN ≥ VOUT(S) + 1.0 V)*1
• Built-in ON/OFF circuit: Ensures long battery life.
• Low ESR capacitor can be used: A ceramic capacitor of 4.7 μF or more can be used for the output
capacitor.
• High ripple rejection: 70 dB typ. (at 1.0 kHz)
• Built-in overcurrent protector: Overcurrent of output transistor can be restricted.
• Built-in thermal shutdown circuit: Damage caused by heat can be prevented.
• Lead-free, Sn 100%, halogen-free*2
*1. Attention should be paid to the power dissipation of the package when the output current is large.
*2. Refer to “ Product Name Structure” for details.
Applications
• Power supply for DVD and CD-ROM drives
• Power supply for battery-powered devices
• Power supply for personal communication device
• Power supply for note PCs
Packages
• SOT-89-5
• 6-Pin HSON(A)
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
2
Block Diagram
VIN
VSS
VOU T
Overcurrent
protector
Thermal shutdown circuit
Reference
voltage circuit
ON/OFF
*1. Parasitic diode
*1
ON/OFF
circuit
+
−
Figure 1
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 3
Product Name Structure
• The product types, output voltage, and package types for the S-1170 Series can be selected at the user’s
request. Refer to the “1. Product name” for the meanings of the characters in the product name, “2.
Package” regarding the package drawings and “3. Product name list” for the full product names.
1. Product name
(1) SOT-89-5
S-1170 x xx UC − xxx TF x
Output voltage
15 to 55
(E.g., when the output voltage is 1.5 V, it is expressed
as 15.
)
Package name (a bbreviation)
UC: SOT-89-5
Environm ental code
U: Lead-free (S n 10 0%), halogen-free
G: Lead-free (for details, please contact our sales offi ce)
Product type*3
A: ON/OFF pin negative logic
B: ON/OFF pi n positive logic
IC direction in tape specifications*1
Product name (abbreviation)*2
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the product name list.
*3. Refer to 3. Shutdown pin (ON/OFF pin) in the “ Operation”.
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
4
(2) 6-Pin HSON(A)
S-1170 x xx PD − xxx TF x
Output voltage
15 to 55
(E.g., when the output voltage is 1.5 V, it is expressed
as 15.
)
Package name (a bbreviation)
PD: 6-Pin HSON(A)
Environm ental code
S: Lead-free , ha logen-free
G: Lead-free (for details, please contact our sales offi ce)
Product type*3
A: ON/OFF pin negative logic
B: ON/OFF pi n positive logic
IC direction in tape specifications*1
Product name (abbreviation)*2
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the product name list.
*3. Refer to 3. Shutdown pin (ON/OFF pin) in the “ Operation”.
2. Package
Drawing Code
Package Name Package Tape Reel
SOT-89-5 UP005-A-P-SD UP005-A-C-SD UP005-A-R-SD
6-Pin HSON(A) PD006-A-P-SD PD006-A-C-SD PD006-A-R-SD
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 5
3. Product name list
Table 1
Output Voltage SOT-89-5 6-Pin HSON(A)
1.5 V ±1.0% S-1170B15UC-OTATFx S-1170B15PD-OTATFz
1.6 V ±1.0% S-1170B16UC-OTBTFx S-1170B16PD-OTBTFz
1.7 V ±1.0% S-1170B17UC-OTCTFx S-1170B17PD-OTCTFz
1.8 V ±1.0% S-1170B18UC-OTDTFx S-1170B18PD-OTDTFz
1.9 V ±1.0% S-1170B19UC-OTETFx S-1170B19PD-OTETFz
2.0 V ±1.0% S-1170B20UC-OTFTFx S-1170B20PD-OTFTFz
2.1 V ±1.0% S-1170B21UC-OTGTFx S-1170B21PD-OTGTFz
2.2 V ±1.0% S-1170B22UC-OTHTFx S-1170B22PD-OTHTFz
2.3 V ±1.0% S-1170B23UC-OTITFx S-1170B23PD-OTITFz
2.4 V ±1.0% S-1170B24UC-OTJTFx S-1170B24PD-OTJTFz
2.5 V ±1.0% S-1170B25UC-OTKTFx S-1170B25PD-OTKTFz
2.6 V ±1.0% S-1170B26UC-OTLTFx S-1170B26PD-OTLTFz
2.7 V ±1.0% S-1170B27UC-OTMTFx S-1170B27PD-OTMTFz
2.8 V ±1.0% S-1170B28UC-OTNTFx S-1170B28PD-OTNTFz
2.9 V ±1.0% S-1170B29UC-OTOTFx S-1170B29PD-OTOTFz
3.0 V ±1.0% S-1170B30UC-OTPTFx S-1170B30PD-OTPTFz
3.1 V ±1.0% S-1170B31UC-OTQTFx S-1170B31PD-OTQTFz
3.2 V ±1.0% S-1170B32UC-OTRTFx S-1170B32PD-OTRTFz
3.3 V ±1.0% S-1170B33UC-OTSTFx S-1170B33PD-OTSTFz
3.4 V ±1.0% S-1170B34UC-OTTTFx S-1170B34PD-OTTTFz
3.5 V ±1.0% S-1170B35UC-OTUTFx S-1170B35PD-OTUTFz
3.6 V ±1.0% S-1170B36UC-OTVTFx S-1170B36PD-OTVTFz
3.7 V ±1.0% S-1170B37UC-OTWTFx S-1170B37PD-OTWTFz
3.8 V ±1.0% S-1170B38UC-OTXTFx S-1170B38PD-OTXTFz
3.9 V ±1.0% S-1170B39UC-OTYTFx S-1170B39PD-OTYTFz
4.0 V ±1.0% S-1170B40UC-OTZTFx S-1170B40PD-OTZTFz
4.1 V ±1.0% S-1170B41UC-OUATFx S-1170B41PD-OUATFz
4.2 V ±1.0% S-1170B42UC-OUBTFx S-1170B42PD-OUBTFz
4.3 V ±1.0% S-1170B43UC-OUCTFx S-1170B43PD-OUCTFz
4.4 V ±1.0% S-1170B44UC-OUDTFx S-1170B44PD-OUDTFz
4.5 V ±1.0% S-1170B45UC-OUETFx S-1170B45PD-OUETFz
4.6 V ±1.0% S-1170B46UC-OUFTFx S-1170B46PD-OUFTFz
4.7 V ±1.0% S-1170B47UC-OUGTFx S-1170B47PD-OUGTFz
4.8 V ±1.0% S-1170B48UC-OUHTFx S-1170B48PD-OUHTFz
4.9 V ±1.0% S-1170B49UC-OUITFx S-1170B49PD-OUITFz
5.0 V ±1.0% S-1170B50UC-OUJTFx S-1170B50PD-OUJTFz
5.1 V ±1.0% S-1170B51UC-OUKTFx S-1170B51PD-OUKTFz
5.2 V ±1.0% S-1170B52UC-OULTFx S-1170B52PD-OULTFz
5.3 V ±1.0% S-1170B53UC-OUMTFx S-1170B53PD-OUMTFz
5.4 V ±1.0% S-1170B54UC-OUNTFx S-1170B54PD-OUNTFz
5.5 V ±1.0% S-1170B55UC-OUOTFx S-1170B55PD-OUOTFz
Remark 1. Please contact the SII marketing department for products with an output voltage other
than those specified above or type A products.
2. x: G or U
z: G or S
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
6
Pin Configuration
Table 2
Pin No. Symbol Description
1 ON/OFF Shutdown pin
2 VSS GND pin
3 NC*1 No connection
4 VIN Input voltage pin
5 VOUT Output voltage pin
5 4
1 3 2
SOT-89-5
Top view
*1. The NC pin is electrically open.
The NC pin can be connected to VIN or VSS.
Figure 2
Table 3
Pin No. Symbol Description
1 VOUT*1 Output voltage pin
2 VOUT*1 Output voltage pin
3 ON/OFF Shutdown pin
4 VSS GND pin
5 VIN*2 Input voltage pin
6 VIN*2 Input voltage pin
*
1. Connect the exposed thermal die
pad at shadowed area to the
board, and set electric potential
open or VS S.
However, do not use it as the
f unct ion o f electrode.
*2. Be careful of the contact with
other wires because the pinch
lead has the same electric
pot ent ial a s VSS.
6-Pin HSON(A)
Top view
6
5
4
1
2
3
Bottom view
*1
1
2
3
6
5
4
*2
*1. Short pins 1 and 2.
*2. Short pins 5 and 6.
Figure 3
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 7
Absolute Maximum Ratings
Table 4
(Ta = 25°C unless otherwise specified)
Parameter Symbol Absolute Maximum Rating Unit
VIN VSS − 0.3 to VSS + 7 V
Input voltage VON/OFF VSS − 0.3 to VIN + 0.3 V
Output voltage VOUT VSS − 0.3 to VIN + 0.3 V
SOT-89-5 Power
dissipation 6-Pin HSON(A) PD 1000
*1 mW
Operating ambient temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125 °C
*1. At mounted on printed circuit board
[Mounted board]
(1) Board size : 40 mm×40 mm×t1.6 mm
(2) Cu wiring shear : 180 % at both sides
Caution The absolute maximum ratings are rated values exceeding w hich the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
Power
Dissipation
PD (mW)
Ambient Te mperat ure Ta (°C)
050 100 150
1200
800
400
0
SOT-89-5
6-Pin HSO N(A)
1000
600
200
Figure 4 Power Dissipation of Package (Mounted on Printed Circuit Board)
Caution Thermal shutdown circuit may operate when junction temperature is 150 °C.
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
8
Electrical Characteristics Table 5 (Ta = 25°C unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Unit
Test
Circuit
Output voltage*1 VOUT(E) V
IN = VOUT(S) + 1.0 V, IOUT = 100 mA VOUT(S)
× 0.99 VOUT(S)
VOUT(S)
× 1.01 V 1
Output current*2 IOUT V
IN ≥ VOUT(S) + 1.0 V 800*5 ⎯ ⎯ mA 3
Dropout voltage*3 Vdrop I
OUT = 300 mA VOUT(S) = 1.5 V ⎯ 0.35 0.45 V 1
V
OUT(S) = 1.6 V ⎯ 0.30 0.35 V 1
V
OUT(S) = 1.7 V ⎯ 0.25 0.30 V 1
1.8 V ≤ VOUT(S) ≤ 2.0 V ⎯ 0.20 0.26 V 1
2.1 V ≤ VOUT(S) ≤ 2.9 V ⎯ 0.15 0.22 V 1
3.0 V ≤ VOUT(S) ≤ 5.5 V ⎯ 0.12 0.18 V 1
ΔVOUT1
Line regulation ΔVIN•VOUT VOUT(S) + 0.5 V ≤ VIN ≤ 6.5 V,
IOUT = 100 mA ⎯ 0.05 0.3 % / V 1
Load regulation ΔVOUT2 VIN = VOUT(S) + 1.0 V,
1.0 mA ≤ IOUT ≤ 300 mA ⎯ 30 100 mV 1
ΔVOUT Output voltage
temperature coefficient*4 ΔTa•VOUT VIN = VOUT(S) + 1.0 V, IOUT = 10 mA,
−40°C ≤ Ta ≤ 85°C ⎯ ±150 ⎯ ppm
/ °C 1
Current consumption
during operation ISS1 VIN = VOUT(S) + 1.0 V, ON/OFF pin = ON,
no load ⎯ 80 160 μA 2
Current consumption
during shutdown ISS2 VIN = VOUT(S) + 1.0 V, ON/OFF pin = OFF,
no load ⎯ 0.1 1.0 μA 2
Input voltage VIN ⎯ 2.0 ⎯ 6.5 V ⎯
Shutdown pin
input voltage “H” VSH V
IN = VOUT(S) + 1.0 V, RL = 1.0 kΩ 1.5 ⎯ ⎯ V 4
Shutdown pin
input voltage “L” VSL V
IN = VOUT(S) + 1.0 V, RL = 1.0 kΩ ⎯ ⎯ 0.3 V 4
Shutdown pin
input current “H” ISH V
IN = 6.5 V, VON/OFF = 6.5 V −0.1 ⎯ 0.1 μA 4
Shutdown pin
input current “L” ISL V
IN = 6.5 V, VON/OFF = 0 V −0.1 ⎯ 0.1 μA 4
1.5 V
≤
V
OUT(S)
≤
3.0 V
⎯ 70 ⎯ dB 5
Ripple rejection
RR
V
IN
=
V
OUT(S)
+
1.0 V,
f
=
1.0 kHz,
Δ
V
rip
=
0.5 Vrms,
I
OUT
=
100 mA 3.1 V
≤
V
OUT(S)
≤
5.5 V
⎯ 65 ⎯ dB 5
Short-circuit current Ishort VIN = VOUT(S) + 1.0 V, ON/OFF pin = ON,
VOUT = 0 V ⎯ 350 ⎯ mA 3
Thermal shutdown
detection temperature TSD Junction temperature ⎯ 150 ⎯ °C ⎯
Thermal shutdown
release temperature TSR Junction temperature ⎯ 120 ⎯ °C ⎯
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 9
*1. VOUT(S): Specified output voltage
VOUT(E): Actual output voltage at the fixed load
The output voltage when fixing IOUT(= 100 mA) and inputting VOUT(S) + 1.0 V
*2. The output current at which the output voltage becomes 95% of VOUT(E) after gradually increasing the output current.
*3. Vdrop = VIN1 − (VOUT3 × 0.98)
V
OUT3 is the output voltage when VIN = VOUT(S) + 1.0 V and IOUT = 300 mA.
VIN1 is the input voltage at which the output voltage becomes 98% of VOUT3 after gradually decreasing the input voltage.
*4. The change in temperature [mV/°C] is calculated using the following equation.
[] [] []
1000C/ppm
VTaV
VVC/mV
Ta
V OUT
OUT
OUT(S)
OUT ÷°
•Δ
Δ
×=°
Δ
Δ3*2*1*
*1. The change in temperature of the output voltage
*2. Specified output voltage
*3. Output voltage temperature coefficient
*5. The output current can be at least this value.
Due to restrictions on the package power dissipation, this value may not be satisfied. Attention should be paid to the power
dissipation of the package when the output current is large.
This specification is guaranteed by design.
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
10
Test Circuits
1.
VSS
VOUT
ON/OFF
Set to
power ON
VIN
V
A
+
+
Figure 5
2.
VSS
VOUT
ON/OFF
Set to
VIN or GND
VIN
A
+
Figure 6
3.
Set to
power ON
VSS
VOUT
ON/OFF
VIN
V
A
+
+
Figure 7
4.
VSS
VOUT
ON/OFF
VIN
A V RL
+ +
Figure 8
5.
VSS
VOUT
ON/OFF
VIN
V +
Set to
Power ON
RL
Figure 9
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 11
Standard Circuit
ON/OFF
VSS
VOUTVIN
CIN
*1
CL
*2
Input Output
GND
Single GND
*1. CIN is a capacitor for stabilizing the input.
*2. A ceramic capacitor of 4.7 μF or more can be used for CL.
Figure 10
Caution The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
Application Conditions
Input capacitor (CIN): 4.7 μF or more
Output capacitor (CL): 4.7 μF or more
ESR of output capacitor: 0.5 Ω or less
Caution A general series regulator may oscillate, depending on the external components selected.
Check that no oscillation occurs with the application using the above capacitor.
Selection of Input and Output Capacitors (CIN, CL)
The S-1170 Series requires an output capacitor between the VOUT and VSS pins for phase compensation.
A ceramic capacitor with a capacitance of 4.7 μF or more provides a stable operation in all temperature
ranges. When using an OS capacitor, tantalum capacitor, or aluminum electrolytic capacitor, a ceramic
capacitor with a capacitance of 4.7 μF or more and an ESR of 0.5 Ω or less is required.
The output overshoot and undershoot values, which are transient response characteristics, vary depending
on the output capacitor value. The required capacitance value for the input capacitor differs depending on
the application.
The recommended application values are, CIN = 4.7 μF or more and CL = 4.7 μF or more, however, perform
a thorough evaluation using the actual device, including evaluation of temperature characteristics.
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
12
Explanation of Terms
1. Low dropout voltage regulator
The low dropout voltage regulator is a voltage regulator whose dropout voltage is low due to its built-in
low on-resistance transistor.
2. Low ESR
A capacitor whose ESR (Equivalent Series Resistance) is low. The S-1170 Series enables use of a low
ESR capacitor, such as a ceramic capacitor, for the output-side capacitor CL. A capacitor whose ESR is
0.5 Ω or less can be used.
3. Output voltage (VOUT)
The accuracy of the output voltage is ensured at ±1.0% under the specified conditions of fixed input
voltage*1, fixed output current, and fixed temperature.
*1. Differs depending the product.
Caution If the above conditions change, the output voltage value may vary and exceed the
accuracy range of the output voltage. Please see the electrical characteristics and
attached characteristics data for details.
4.
V ΔV
ΔV
regulation Line OUTIN
OUT1 ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
•
Indicates the dependency of the output voltage on the input voltage. That is, the values show how much
the output voltage changes due to a change in the input voltage with the output current remaining
unchanged.
5. Load regulation (ΔVOUT2)
Indicates the dependency of the output voltage on the output current. That is, the values show how
much the output voltage changes due to a change in the output current with the input voltage remaining
unchanged.
6. Dropout voltage (Vdrop)
Indicates the difference between the input voltage VIN1, which is the input voltage (VIN) at the point where
the output voltage has fallen to 98% of the output voltage value VOUT3 after VIN was gradually decreased
from VIN = VOUT(S) + 1.0 V, and the output voltage at that point (VOUT3 × 0.98).
Vdrop = VIN1 − (VOUT3 × 0.98)
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 13
7. ⎟
⎠
⎞
⎜
⎝
⎛
•Δ
Δ
OUT
OUT
V TaV
voltage output of tcoefficien eTemperatur
The shadowed area in Figure 11 is the range where VOUT varies in the operating temperature range
when the temperature coefficient of the output voltage is ±150 ppm/°C.
VOUT
(
E
)
*1
Ex. S-1170B28 Typ.
−40 25
+
0.42 mV / °C
VOUT
[V]
*1. VOUT(E) is the value of the output voltage measured at 25°C
.
85 Ta [°C]
−
0.42 mV / °C
Figure 11
A change in the temperature of the output voltage [mV/°C] is calculated using the following equation.
[] [] []
1000C/ppm
VTaV
VVC/mV
Ta
V
OUT
OUT
OUT(S)
OUT ÷°
•
Δ
Δ
×=°
Δ
Δ3*2*1*
*1. Change in temperature of output voltage
*2. Specified output voltage
*3. Output voltage temperature coefficient
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
14
Operation
1. Basic operation
Figure 12 shows the block diagram of the S-1170 Series.
The error amplifier compares the reference voltage (Vref) with Vfb, which is the output voltage resistance-
divided by feedback resistors Rs and Rf. It supplies the output transistor with the gate voltage necessary
to ensure a certain output voltage free of any fluctuations of input voltage and temperature.
Reference voltage
circuit
VOUT
*1
*1. Parasitic diode
VSS
VIN
Rs
R
f
Error
amplifier
Current
supply
Vref −
+
Vfb
Figure 12
2. Output transistor
The S-1170 Series uses a low on-resistance P-channel MOS FET as the output transistor.
Be sure that VOUT does not exceed VIN + 0.3 V to prevent the voltage regulator from being damaged due
to inverse current flowing from VOUT pin through a parasitic diode to VIN pin.
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 15
3. Shutdown pin (ON/OFF pin)
This pin starts and stops the regulator.
When the ON/OFF pin is set to the shutdown level, the operation of all internal circuits stops, and the built-
in P-channel MOS FET output transistor between the VIN pin and VOUT pin is turned off to substantially
reduce the current consumption. The VOUT pin becomes the VSS level due to the internally divided
resistance of several hundreds kΩ between the VOUT pin and VSS pin.
The structure of the ON/OFF pin is as shown in Figure 13. Since the ON/OFF pin is neither pulled down
nor pulled up internally, do not use it in the floating state. In addition, note that the current consumption
increases if a voltage of 0.3 V to VIN − 0.3 V is applied to the ON/OFF pin. When the ON/OFF pin is not
used, connect it to the VSS pin if the logic type is “A” and to the VIN pin if it is “B”.
Table 6
Logic Type ON/OFF Pin Internal Circuits VOUT Pin Voltage Current Consumption
A “L”: Power on Operating Set value ISS1
A “H”: Power off Stopped VSS level ISS2
B “L”: Power off Stopped VSS level ISS2
B “H”: Power on Operating Set value ISS1
VSS
ON/OFF
VIN
Figure 13
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
16
4. Thermal shutdown circuit
The S-1170 Series implements a thermal shutdown circuit to protect the device from damage due to
overheating. When the junction temperature rises to 150°C (typ.), the thermal shutdown circuit operates
and the regulator operation stops. When the junction temperature drops to 120°C (typ.), the thermal
shutdown circuit is released and the regulator operation resumes.
If the thermal shutdown circuit starts operating due to self-heating, the regulator operation stops and the
output voltage falls. When the regulator operation has stopped, no self-heat is generated and the
temperature of the IC is lowered. When the temperature has dropped, the thermal shutdown circuit is
released, the regulator operation resumes, and self-heat is generated again. By repeating this procedure,
the output voltage waveform forms pulses. This phenomenon, stopping and resuming the regulator
operation, continues until the internal power consumption is reduced by reducing either the input voltage
or output current or both, or the ambient temperature is lowered.
Table 7
Thermal Shutdown Circuit VOUT Pin Voltage
Operating: 150°C (typ.) VSS level
Released: 120°C (typ.) Set value
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 17
Precautions
• Wiring patterns for the VIN, VOUT and GND pins should be designed so that the impedance is low.
When mounting an output capacitor between the VOUT and VSS pins (CL) and a capacitor for stabilizing
the input between VIN and VSS pins (CIN), the distance from the capacitors to these pins should be as
short as possible.
• Note that the output voltage may increase when a series regulator is used at low load current (1.0 mA or
less).
• Generally a series regulator may cause oscillation, depending on the selection of external parts. The
following conditions are recommended for this IC. However, be sure to perform sufficient evaluation
under the actual usage conditions for selection, including evaluation of temperature characteristics.
Input capacitor (CIN): 4.7 μF or more
Output capacitor (CL): 4.7 μF or more
Equivalent series resistance (ESR): 0.5 Ω or less
• The voltage regulator may oscillate when the impedance of the power supply is high and the input
capacitor is small or an input capacitor is not connected.
• The application conditions for the input voltage, output voltage, and load current should not exceed the
package power dissipation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
• In determining the output current, attention should be paid to the output current value specified in Table
5 in the “ Electrical Characteristics” and footnote *5 of the table.
• SII claims no responsibility for any disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
18
Typical Characteristics
(1) Output Voltage vs. Output current (when load current increases)
S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C)
VOUT [V]
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00 200 400 600 800 1000 1200
VIN = 2.0 V
2.5 V
6.5 V
VOUT [V]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0400 600 800 1000
2000 1200
VIN = 3.5 V
4.0 V
6.5 V
IOUT [mA] IOUT [mA]
S-1170B50 (Ta = 25°C)
VOUT [V]
6
5
4
3
2
1
0400 600 8002000 1000 1200
VIN = 5.5 V
6.0 V
6.5 V
IOUT [mA]
Remark In determining the output current, attention
should be paid to the following.
1) The minimum output current value
and footnote *5 in the “ Electrical
Characteristics”
2) The package power dissipation
(2) Output voltage vs. Input voltage
S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C)
VOUT [V]
1.6
1.5
1.4
1.3
1.2
1.1
1.0 3.53.0
2.5
2.0
1.5
1.0
IOUT = 1 mA
10 mA
100 mA
300 mA
VOUT [V]
3.1
3.0
2.9
2.8
2.7
2.6
2.5 5.04.5
4.0 3.53.02.5
IOUT = 1 mA
10 mA
100 mA
300 mA
VIN [V] VIN [V]
S-1170B50 (Ta = 25°C)
VOUT [V]
5.1
5.0
4.9
4.8
4.7
4.6
4.5 7.06.5
6.0 5.5 5.0 4.5
IOUT = 1 mA
10 mA
100 mA
300 mA
VIN [V]
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 19
(3) Dropout voltage vs. Output current
S-1170B15 S-1170B30
Vdrop [V]
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 100 400 600 900
200 300 500 700 800
−40°C
25°C
85°C
Vdrop [V]
0.6
0.5
0.4
0.3
0.2
0.1
00 100 400 600 900
200 300 500 700 800
−40°C
25°C
85°C
IOUT [mA]
IOUT [mA]
S-1170B50
Vdrop [V]
0.6
0.5
0.4
0.3
0.2
0.1
00 100 400 600 900
200 300 500 700 800
−40°C
25°C
85°C
IOUT [mA]
(4) Dropout voltage vs. Set output voltage
Vdrop [V]
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
01 2 3 4 5 6
0
600 mA
800 mA
300 mA
10 mA
VOTA [V]
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
20
(5) Output voltage vs. Ambient temperature
S-1170B15 (IOUT = 10 mA) S-1170B30 (IOUT = 10 mA)
VOUT(E) [V]
1.70
1.65
1.60
1.55
1.50
1.45
1.40
1.35
1.30 25
−25 75 85
−40 0 50
VOUT(E) [V]
3.20
3.15
3.10
3.05
3.00
2.95
2.90
2.85
2.80 25
−25 75 85
−40 0 50
Ta [°C]
Ta [°C]
S-1170B50 (IOUT = 10 mA)
VOUT(E) [V]
5.20
5.15
5.10
5.05
5.00
4
.95
4
.90
4
.85
4
.80 25
−25 75 85
−40 0 50
Ta [°C]
(6) Current consumption vs. Input voltage
S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C)
ISS1 [μA]
80
70
60
50
40
30
20
10
06
4
2
0 1 3 5 7
ISS1 [μA]
80
70
60
50
40
30
20
10
06
4
2
0 1 3 5 7
V
IN [V]
V
IN [V]
S-1170B50 (Ta = 25°C)
ISS1 [μA]
80
70
60
50
40
30
20
10
06
4
2
0 1 3 5 7
V
IN [V]
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 21
(7) Ripple rejection
S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C)
VIN = 2.5 V, COUT = 4.7 μF VIN = 4.0 V, COUT = 4.7 μF
Ripple Rejection [dB]
1M
100
80
60
40
20
0100 1k 10k 100k
10
IOUT
=
50 mA
100 mA
Ripple Rejection [dB]
1M
100
80
60
40
20
0100 1k 10k 100k
10
IOUT = 50 mA
100 mA
Frequency [Hz]
Frequency [Hz]
S-1170B50 (Ta = 25°C)
VIN = 6.0 V, COUT = 4.7 μF
Ripple Rejection [dB]
1M
100
80
60
40
20
0100 1k 10k 100k
10
IOUT = 50 mA
100 mA
Frequency [Hz]
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1170 Series Rev.4.0_00
Seiko Instruments Inc.
22
Reference Data
(1) Input transient response characteristics
S-1170B15 S-1170B30
IOUT = 100 mA, tr = tf = 5.0 μs, COUT = 4.7 μF, CIN = 4.7 μF IOUT = 100 mA, tr = tf = 5.0 μs, COUT = 4.7 μF, CIN = 4.7 μF
VOUT [V]
−20 −10 0 10 20 30 40 50 60
1.62
1.60
1.58
1.56
1.54
1.52
1.50
1.48
1.46
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VIN
VOUT
VIN [V]
VOUT [V]
−20 −10 010 20 30 40 50 60
3.08
3.06
3.04
3.02
3.00
2.98
2.96
6.0
5.0
4.0
3.0
2.0
1.0
0
VIN
VOUT
VIN [V]
t [μs] t [μs]
S-1170B50
IOUT = 100 mA, tr = tf = 5.0 μs, COUT = 4.7 μF, CIN = 4.7 μF
VOUT [V]
−20 −10 0 10 20 30 40 50 60
5.12
5.10
5.08
5.06
5.04
5.02
5.00
4.98
4.96
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
VIN
VOUT
VIN [V]
t [μs]
(2) Load transient response characteristics
S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C)
VIN = 2.5 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 50↔100 mA VIN = 4.0 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 50↔100 mA
VOUT [V]
1.70
1.65
1.60
1.55
1.50
1.45
1.40
150
100
50
0
−50
−100
−150
0 20 40 60 80 100 120 140
−20 160
IOUT
VOUT
IOUT [mA]
VOUT [V]
150
100
50
0
−50
−100
−150
3.20
3.15
3.10
3.05
3.00
2.95
2.90 020 40 60 80 100 120 140
−20 160
IOUT
VOUT
IOUT [mA]
t [μs] t [μs]
S-1170B50 (Ta = 25°C)
VIN = 6.0 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 50↔100 mA
VOUT [V]
5.20
5.15
5.10
5.05
5.00
4.95
4.90
150
100
50
0
−50
−100
−150
0 20 40 60 80 100 120 140
−20 160
VOUT
IOUT
IOUT [mA]
t [μs]
HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR
Rev.4.0_00 S-1170 Series
Seiko Instruments Inc. 23
(3) Shutdown pin transient response characteristics
S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C)
VIN = 2.5 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 100 mA VIN = 4.0 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 100 mA
VOUT [V]
3
2
1
0
−1
−2
−3
5
4
3
2
1
0
−10 10 20 30 40 50 60 70
−10 80 90
VON/OFF
VOUT
VON/OFF [V]
VOUT [V]
6
4
2
0
−2
−4
−6
7
6
5
4
3
2
1
0
−1010 20 30 40 50 60 70
−10 80 90
VON/OFF
VOUT
VON/OFF [V]
t [μs] t [μs]
S-1170B50 (Ta = 25°C)
VIN = 6.0 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 100 mA
VOUT [V]
6
3
0
−3
−6
9
7
5
3
1
−10 10 20 30 40 50 60 70
−10 80 90
VON/OFF
VOUT
VON/OFF [V]
t [μs]
S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C)
VIN = 2.5 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 300 mA VIN = 4.0 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 300 mA
VOUT [V]
3
2
1
0
−1
−2
−3
5
4
3
2
1
0
−10 10 20 30 40 50 60 70
−10 80 90
VON/OFF
VOUT
VON/OFF [V]
VOUT [V]
6
4
2
0
−2
−4
−6
7
6
5
4
3
2
1
0
−1010 20 30 40 50 60 70
−10 80 90
VON/OFF
VOUT
VON/OFF [V]
t [μs] t [μs]
S-1170B50 (Ta = 25°C)
VIN = 6.0 V, COUT = 4.7 μF, CIN = 4.7 μF, IOUT = 300 mA
VOUT [V]
6
3
0
−3
−6
9
7
5
3
1
−10 10 20 30 40 50 60 70
−10 80 90
VON/OFF
VOUT
VON/OFF [V]
t [μs]
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
1.5±0.1 1.5±0.1
1.6±0.2
4.5±0.1
132
1.5±0.1
0.4±0.05
0.4±0.1
0.45±0.1
0.4±0.1
45°
0.3
54
No. UP005-A-P-SD-1.1
UP005-A-P-SD-1.1
SOT895-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.0±0.1
0.3±0.05
8.0±0.1
ø1.5+0.1
-0
2.0±0.05
ø1.5+0.1
-0
4.75±0.1
5° max.
1
32
54
No. UP005-A-C-SD-1.1
UP005-A-C-SD-1.1
SOT895-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches : 40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
16.5max.
13.0±0.3
QTY. 1,000
(60°)
(60°)
No. UP005-A-R-SD-1.1
UP005-A-R-SD-1.1
SOT895-A-Reel
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
2.90±0.1
0.5typ.
0.95±0.05
0.30
+0.1
-0.05
(1.5)
Seiko Instruments Inc.
HSON6A-A-PKG Dimensions
No. PD006-A-P-SD-4.0
PD006-A-P-SD-4.0
The exposed thermal die pad has different
electric potential depending on the product.
Confirm specifications of each product.
Do not use it as the function of electrode.
ø1.05±0.05
0.2±0.05
1.5±0.1
ø1.55±0.05
2.0±0.05
4.0±0.1
3.3±0.1 4.0±0.1
No.
TITLE
SCALE
UNIT mm
1
3
46
Feed direction
HSON6A-A-Carrier Tape
Seiko Instruments Inc.
No. PD006-A-C-SD-2.0
PD006-A-C-SD-2.0
No.
TITLE
SCALE
UNIT mm
QTY. 3000
Seiko Instruments Inc.
HSON6A-A-Reel
(60°)
(60°)
ø13±0.2
12.5max.
9.0±0.3
Enlarged drawing in the central part
No. PD006-A-R-SD-1.0
PD006-A-R-SD-1.0
www.sii-ic.com
• The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the approp riate governm ental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permissi on of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicle s, without prior written permission of Seiko Instruments Inc.
• The products described herein are not design ed to be radiation-proof.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or comm unity damage that may ensue.
