1
Trench Gate Design
Dual IGBTMOD™
200 Amperes / 1200 Volts
CM200DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A4.25 108.0
B2.44 62.0
C1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F0.67 17.0
G0.16 4.0
H0.24 6.0
J0.59 15.0
K0.55 14.0
Dimensions Inches Millimeters
L0.87 22.0
M0.33 8.5
N0.10 2.5
P0.85 21.5
Q0.98 25.0
R0.11 2.8
SM6 M6
T0.26 Dia. 6.5 Dia.
U0.02 0.5
V0.62 15.85
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recover y
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□UPS
□Batter y Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24F is a
1200V (VCES), 200 Ampere Dual
IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 200 24
K
D
C
A
EB
S - NUTS (3 TYP)
CM
KK
L
R
M
J
T (4 TYP.)
PQ
C2E1
Q
E2
C
L
N
C1
F
H
G
H
G1
E1
E2
G2
C2E1
RTC
E2
E1
G1
C1
E2
G2
RTC
TC MEASURING
POINT
U
V
2
CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
2
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DU-24F Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes
Emitter Current** (Tc = 25°C) IE200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc890 Watts
Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight –400 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 40 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts
IC = 200A, VGE = 15V, Tj = 125°C– 1.9 – Volts
Total Gate Charge QGVCC = 600V, IC = 200A, VGE = 15V – 2200 – nC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
3
CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––78nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 3.4 nf
Reverse Transfer Capacitance Cres ––2nf
Inductive Tur n-on Delay Time td(on) VCC = 600V, IC = 200A, – – 300 ns
Load Rise Time trVGE1 = VGE2 = 15V, – – 80 ns
Switch Tur n-off Delay Time td(off) RG = 1.6⍀,––500 ns
Times F all Time tfInductive Load – – 300 ns
Diode Reverse Recovery Time** trr Switching Operation – – 200 ns
Diode Reverse Recovery Charge** Qrr IE = 200A – 12.2 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)QPer IGBT 1/2 Module, Tc Reference – 0.15 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)DPer FWDi 1/2 Module, Tc Reference – – 0.18 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, – 0.08 °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Ther mal Grease Applied – 0.020 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
4
CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
16
12
8
4
030002500200015001000500
V
CC
= 400V
V
CC
= 600V
I
C
= 200A
COLLECTOR CURRENT, I
C
, (AMPERES)
103
101102103
102
101
100
t
r
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10-1 100102
102
101
100
10-1
V
GE
= 0V
101
C
ies
C
oes
C
res
0 1.0 2.0 3.0 4.0
101
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
068101214161820
4
3
2
1
0
T
j
= 25°C
I
C
= 80A
I
C
= 400A
I
C
= 200A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0 100 200 300
2
1
0400
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
01 234
0
V
GE
= 20V
15 10
9
9.5
8
T
j
= 25
o
C
100
200
400
300
8.5
11
t
d(on)
t
d(off)
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6 Ω
T
j
= 125°C
Inductive Load
Tj = 25°C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Z
th
= R
th
• (NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.15°C/W (IGBT)
R
th(j-c)
= 0.18°C/W (FWDi)
Single Pulse
T
C
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
103
101102103
102
101
t
rr
I
rr
103
102
101
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6 Ω
T
j
= 25°C
Inductive Load
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)