Rugged Power MOSFETs IRFD110R, IRFD111R, IRFD112R, IRFD113R File Number 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V tos(on) = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: lB Single pulse avalanche energy rated @ SOA is power-dissipation limited G B Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance 9205-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION The IRFD110R, IRFD111R, IRFD112R and IRFD113R are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- | 8 down avalanche mode of operation. Fhese are n-channel D | enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, | s switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring * high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFD-types are supplied in the 4-Pin dual-in-line plas- tic package. TOP VIEW 4-PIN DIP Absolute Maximum Ratings P: ti IRFD110R | IRFD111R | IRFD112R | IRFO113R Units Vos Drain - Source Voitage @ 100 60 100 60 Vocr Drain - Gate Voitage (Ras = 20 KN) @ 100 60 100 60 lp @ Te = 25C Continuous Drain Current 1.0 1.0 0.8 0.8 lom Puised Drain Current 8.0 8.0 6.4 6.4 Vos Gate - Source Voltage +20 Po @ Te = 26C Max. Power Dissipation 1.0 (See Fig. 13) Sl<[>|>l<l< Linear Derating Factor 0.008 (See Fig. 13) whet Eas Single Pulse Avalanche Energy Rating @ 19 Ty Tato Operating Junction and Storage Temperature Range -55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-179Rugged Power MOSFETs IRFD110RA, IRFD111R, IRFD112R, IRFD113R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage |IRFD110R _ inFDi12R| 1 | | V__| Vos = OV IRFO111R _ IRFD113R 60 _ - v Ip = 250uA Vesun Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Ves, lo = 2504 A lass Gate-Source Leakage Forward ALL = = 500 nA__| Vos = 20V loss Gate-Source Leakage Reverse ALL = = -500 nA Vas = -20V loss Zero Gate Voltage Drain Current _ 250 HA Vos = Max. Rating, Ves = OV ALL _ | 1000 | yA | Vos = Max. Rating x 0.8, Vos = OV, Tc = 125C loin On-State Drain Current @ IRFDI10R| 49 _ _ A mt WAR] Vos > loton) X Reston! max, Ves = 10V | 112R iReDIigA| 88 | = A Rosin Static Drain-Source On-State IRFDII0OR| __ 05 06 Q Resistance mee 1 a Ves = 10V, In = 0.8A inFo1iaR| ~ | 28 | O8 | 2 Gre Forward Transconductance @ ALL 0.8 1.2 _| S(O) | Vos > Ipion x Rostonmar., In = 0.8A Cis Input Capacitance ALL _ 135 _ pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL. _ 80 pF See Fig. 10 Crs Reverse Transfer Capacitance ALL. = 20 = pF teow Turn-On Delay Time ALL. = 10 20 ns Vop = 0.5BVoss, Ip = 0.8A, Zo = SON t, Rise Time ALL. _ 16 25 ns See Fig. 16 tator Turn-Off Delay Time ALL 15 25 ns (MOSFET switching times are essentially a Fall Time ALL ae 10 20 ns independent of operating temperature.) Q, Total Gate Charge ALL _ 5.0 "1 nc Ves = 10V, lp = 4.0A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) 7 . See Fig. 17 for test circuit. (Gate charge is Qos Gate-Source Charge ALL _ 2.0 - nc | essentially independent of operating 7 f"BAler temperature.) Osa Gate-Drain (Miller) Charge ALL _ 7.0 = ac Lo internal Drain Inductance ALL. ~_ 4.0 _ nH Measured from the Modified MOSFET drain lead, 2.0mm symboi showing the (0.08 in.) from package | internal device , to center of die. inductances LO Ls Internal Source inductance ALL - 6.0 _ nH Measured from the source lead, 2.0 mm 6 ; (0.08 in.) from . package to source s bonding pad. sacs czas Thermal Resistance ["RuJA Junction-to-Ambient Lace | | | 120 | cc/w| Free Air Operation | Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (RFD110R |} _ 10 A Modified MOSFET symbol (Body Diode) {RFD111R . showing the integral . IRFD112R reverse P-N junction rectifier. inFD113R| ~ | | 8 | 4 Isea Pulse Source Current (RFD110R| _ _ 8.0 A G (Body Diode) iRFO11R . IRFD112R rch szase inFougR| | ~ | &4 | A Vso Diode Forward Voltage @ IRFOU0R| __ = = = IRFDI11R - 2.5 Vv Ta = 28C, Is = 1.0A, Vas = OV t{RFD112R = = = IRFD113R _ _- 2.0 v Ta = 25C, Is = 0.8A, Vas = OV t, - Reverse Recovery Time ALL _ 100 = as Ts = 150C, Ip = 1.0A, dte/dt = 100A/ys Qra Reverse Recovered Charge ALI. = 0.2 = pC Ty = 180C, te = 1.0A, dle/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controtied by Ls + Lo. @ Ts = 28C to 150C. Pulse Test: Pulse width <= 300us, Duty Cycle = 2%. @ Von = 25V, starting T, = 25C, L = 23.25MH, Ros = 250, tpesx = 3.5A. See figs. 15, 16. 6-180Rugged Power MOSFETs IRFD110R, IRFD111R, IRFD112R, (RFO113R 40 40 8 a 4 t a Ty = 12596 5 2 3 30 = 30 st M4 7 feehe 1 = = Vos > !D(on) * Roston) max, 3 3 Zz 20 z 20 < 5 Z s Ss 1.0 10 a 0 0 10 20 30 40 50 0 2 4 6 a 10 Vpg, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vag, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 19 5.0 3 a 20 2 = 10 5 2 | 3 = o = 45 =z E @ z RA THIS = 9,2 IS LIMITED BY o > a z Foo << a ac 3 S 0.05 = 2 0.02 Ty = 150C MAX. SINGLE PULSE 0.01 11R, IRFD1 0.005 0 1 2 3 4 5 05 10 2 5 10 20 0 100 200 500 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 10 us 1 t Vas > !o(on) * Fas(oni 5 Ty = 1509C Mfg TRANSCONDUCTANCE (SIEMENS) (on. REVERSE DRAIN CURRENT (AMPERES) 01 0 1 2 3 4 5 O 02 04 O06 08 10 12 14 16 18 20 Ip. DRAIN CURRENT (AMPERES) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS! Fig. 5 Typical Transconductance Vs. Drain Current Fig. 6 Typical Source-Drain Diode Forward Voltage 6-181Rugged Power MOSFETs IRFD110R, IRFD111R, (RFO0112R, iRFD113R 6-182 1.25 1.20 1.15 4.10 1.00 0.90 0.85 BVijgg ORAIN-TOSQURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.75 60 40 -20 09 20 44 GO 80 100 120 Ty, JUNCTION TEMPERATURE (c) Fig. 7 Breakdown Voltage Vs. Temperature C, CAPACITANCE (pF) Fig. 9 Typical Capacitance Vs. Drain-to-Source Voltage Boston}. DRAIN-TO-SOURCE ON RESISTANCE (OHMS) =0 t= 1 MHz Cigg = Ugg + Cog, Cys SHORTED Coy = Ogg Cogs = Cag + ee = Cas + Cog iD} 20 30 40 Vos. ORAIN-TO-SOQUACE VOLTAGE (VOLTS) Rosian} MEASURED WITH CURRENT PULSE 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) 2 4 6 Ip. DRAIN CURRENT (AMPERES) Fig. 11 Typical On-Resistance Vs. Drain Current 140 50 Roston}- ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Fig. 8 Nor Vgg. GATE-TO-SQUACE VOLTAGE (VOLTS) -20 0 2 40 60 B80 100 120 140 Ty, JUNCTION TEMPERATURE (C) lized On-Resi Vs. Temp IU = 80V, IRFD110A, Ip = 4A FOR TEST CIRCUIT SEE 2 4 6 8 10 Qy. TOTAL GATE CHARGE nC) Fig. 10 Typical Gate Charge Vs. Gate-to-Source Voltage tg. DRAIN CURRENT (AMPERES} (RFO1I0R, 1117 50 15 100 125 150 Ta, AMBIENT TEMPERATURE (C) Fig. 12 Maximum Drain Current Vs. Case TemperatureRugged Power MOSFETs Pg, POWER DISSIPATION (WATTS) IRFD110R, IRFD111R, IRFD112R, IRFD113R VARY tp TO OBTAIN REQUIRED PEAK ty but : Ros ~ Yoo Vgg*10 i Fie] 92C$- 42659 ~ Fig. 14 Unclamped Energy Test Circuit 0 2 640 60 Ce eer) Ty, AMBIENT TEMPERATURE (C} Fig. 13 Power Vs. Temperature Derating Curve 92C$- 42660 Fig. 15 Unclamped Energy Waveforms > Vos CURRENT ISOLATED REGULATOR SUPPLY) SAME TYPE lav BATTERY | AOQJUST Ay Ybo TO OBTAIN SPECIFIED Ip $ Ay v, PULSE 9 GENERATOR Owu.T. + To score --- Vos 0.0122 HIGH FREQUENCY SHUNT CURRENT > CURRENT SAMPLING SAMPLING = RESISTOR RESISTOR Fig. 16 Switching Time Test Circuit Fig. 17 Gate Charge Test Circuit 6-183