Original Creation Date: 01/10/01
Last Update Date: 04/20/01
Last Major Revision Date:
MDLM111-X REV 0B0 MICROCIRCUIT DATA SHEET
VOLTAGE COMPARATOR
General Description
The LM111, is a voltage comparator that has input currents nearly a thousand times lower
than devices such as the LM106 and LM710. It is also designed to operate over a wider
range of supply voltages: from standard +15V op amp supplies down to the single 5V supply
used for IC logic. Its output is compatible with RTL, DTL and TTL as well as MOS circuits.
Further, it can drive lamps or relays, switching voltages up to 50V at currents as high as
50mA.
Both the inputs and the outputs of the LM111, can be isolated from system ground, and the
output can drive loads referred to ground, the positive supply or the negative supply.
Offset balancing and strobe capability are provided and outputs can be wire OR'ed.
Although slower than the LM106 and LM710 (200 ns response time vs 40ns) the devices are
also much less prone to spurious oscillations. The LM111 has the same pin configuration as
the LM106 and LM710.
NS Part Numbers
LM111E-SMD
LM111H-SMD
LM111J-8-SMD
LM111WG-SMD
Industry Part Number
LM111
Prime Die
LM111
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MDLM111-X REV 0B0
Features
- Low Input Bias Current.
- Low Input Offset Current.
- Wide Differential Input Voltage.
- Power Supply Voltage, Single 5V to +15V.
- Offset Voltage Null Capability.
- Strobe Capability.
CONTROLLING DOCUMENTS:
LM111E-SMD 5962-8687701Q2A
LM111H-SMD 5962-8687701QGA
LM111J-8-SMD 5962-8687701QPA
LM111WG-SMD 5962-8687701QZA
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MICROCIRCUIT DATA SHEET
MDLM111-X REV 0B0
(Absolute Maximum Ratings)
(Note 1)
Positive Supply Voltage +30.0V
Negative Supply Voltage -30.0V
Total Supply Voltage 36V
Output to Negative Supply Voltage 50V
GND to Negative Supply Voltage 30V
Differential Input Voltage +30V
Sink Current 50mA
Input Voltage
(Note 2) +15V
Power Dissipation
(Note 3) 500mW
Output Short Circuit Duration 10 sec.
Maximum Strobe Current 10mA
Operating Temperature Range -55 C < Ta < 125 C
Thermal Resistance
ThetaJA 134 C/W 8 Ld DIP (Still Air @ 0.5W) 76 C/W (500LF/Min Air flow @ 0.5W) 162 C/W 8 Ld Metal Can Pkg (Still Air @ 0.5W) 92 C/W (500LF/Min Air flow @ 0.5W) 231 C/W 10 CERAMIC SOIC (Still Air @ 0.5W) 153 C/W (500LF/Min Air flow @ 0.5W) 90 C/W 20 Ld LCC (Still Air @ 0.5W) 65 C/W (500LF/Min Air flow @ 0.5W)
ThetaJC 21 C/W 8 Ld DIP 50 C/W 8 Ld Metal Can Pkg 24 C/W 10 CERAMIC SOIC 21 C/W 20 Ld LCC
Storage Temperature Range -65 C < Ta < 150 C
Maximum Junction Temperature 175 C
Lead Temperature 300 C(Soldering, 60 seconds)
Voltage at Strobe Pin V+ -5V
Package Weight
(Typical) 965mg 8 Ld Metal Can 1100mg 8 Ld Dip 220mg10 Ld CERAMIC SOIC TBD20 Ld LCC
ESD Rating
(Note 4)
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MICROCIRCUIT DATA SHEET
MDLM111-X REV 0B0
(Absolute Maximum Ratings)(Continued)
(Note 1)
ESD Rating
(Note 4) 300V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: This rating applies for +15V supplies. The positive input voltage limits is 30V above
the negative supply. The negative input voltage limits is equal to the negative
supply voltage or 30V below the positive supply, whichever is less.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 4: Human body model, 1.5k Ohms in series with 100pF.
Recommended Operating Conditions
Supply Voltage Vcc = +15Vdc
Operating Temperature Range -55 C < Ta < +125 C
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MDLM111-X REV 0B0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +15V, Vcm = 0V
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vio Input Offset
Voltage Vin = 0V, Rs = 50 Ohms -3 +3 mV 1
-4 +4 mV 2, 3
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50 Ohms -3 +3 mV 1
-4 +4 mV 2, 3
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50 Ohms -3 +3 mV 1
-4 +4 mV 2, 3
+Vcc = +2.5V, -Vcc = -2.5V, Vin = 0V,
Rs = 50 Ohms -3 +3 mV 1
-4 +4 mV 2, 3
Vio(R) Raised Input
Offset Voltage Vin = 0V, Rs = 50 Ohms -3 +3 mV 1
-4.5 +4.5 mV 2, 3
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50 Ohms -3 +3 mV 1
-4.5 +4.5 mV 2, 3
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50 Ohms -3 +3 mV 1
-4.5 +4.5 mV 2, 3
Iio Input Offset
Current Vin = 0V, Rs = 50K Ohms -10 +10 nA 1, 2
-20 +20 nA 3
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50K Ohms -10 +10 nA 1, 2
-20 +20 nA 3
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50K Ohms -10 +10 nA 1, 2
-20 +20 nA 3
Iio(R) Raised Input
Offset Current Vin = 0V, Rs = 50K Ohms -25 +25 nA 1, 2
-50 +50 nA 3
Iib+ Input Bias
Current Vin = 0V, Rs = 50K Ohms -100 0.1 nA 1, 2
-150 0.1 nA 3
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50K Ohms -150 0.1 nA 1, 2
-200 0.1 nA 3
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50K Ohms -150 0.1 nA 1, 2
-200 0.1 nA 3
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MDLM111-X REV 0B0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +15V, Vcm = 0V
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Iib- Input Bias
Current Vin = 0V, Rs = 50K Ohms -100 0.1 nA 1, 2
-150 0.1 nA 3
+Vcc = 29.5V, -Vcc = -0.5V, Vin = 0V,
Vcm = -14.5V, Rs = 50K Ohms -150 0.1 nA 1, 2
-200 0.1 nA 3
+Vcc = 2V, -Vcc = -28V, Vin = 0V,
Vcm = +13V, Rs = 50K Ohms -150 0.1 nA 1, 2
-200 0.1 nA 3
Vo(STB) Collector Output
Voltage (ST) Vin+ = Gnd, Vin- = 15V, Istb = -3mA,
Rs = 50 Ohms 1 14 V 1, 2,
3
CMR Common Mode
Rejection -28V<-Vcc<-0.5V, Rs=50 Ohms,
2V<+Vcc<29.5V, Rs=50 Ohms,
-14.5V<Vcm<13V,Rs=50 Ohms
80 dB 1, 2,
3
Vol Low Level Output
Voltage +Vcc = 4.5V, -Vcc = Gnd, Iout = 8mA,
+Vin = 0.71V, Vid = -6mV 0.4 V 1, 2,
3
+Vcc = 4.5V, -Vcc = Gnd, Iout = 8mA,
+Vin = -1.75V, Vid = -6mV 0.4 V 1, 2,
3
Iout = 50mA, +Vin = 13V, Vid = -5mV 1.5 V 1, 2,
3
Iout = 50mA, +Vin = -14V, Vid = -5mV 1.5 V 1, 2,
3
Icex Output Leakage
Current +Vcc = 18V, -Vcc = -18V, Vout = 32V -1 10 nA 1
-1 500 nA 2
Ii Input Leakage
Current +Vcc = 18V, -Vcc = -18V,
+Vin = +12V, -Vin = -17V 7 -5 500 nA 1, 2,
3
+Vcc = 18V, -Vcc = -18V,
+Vin = -17V, -Vin = +12V 7 -5 500 nA 1, 2,
3
Icc+ Power Supply
Current 6 mA 1, 2
7mA3
Icc- Power Supply
Current -5 mA 1, 2
-6 mA 3
Delta
Vio/Delta
T
Temperature
Coefficient Input
Offset Voltage
25 C < T < 125 C 8 -25 25 uV/ C 2
-55 C < T < 25 C 8 -25 25 uV/ C 3
Delta
Iio/Delta
T
Temperature
Coefficient Input
Offset Current
25 C < T < 125 C 8 -100 100 pA/ C 2
-55 C < T < 25 C 8 -200 200 pA/ C 3
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MDLM111-X REV 0B0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +15V, Vcm = 0V
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Ios Short Circuit
Current Vout = 5V, t < 10mS, Vin- = 0.1V,
Vin+ = 0V 3, 5 200 mA 1
3, 5 150 mA 2
3, 5 250 mA 3
Vio(adj)+ Input Offset
Voltage
(Adjustment)
Vout = 0V, Vin = 0V, Rs = 50 Ohms 3 5 mV 1
Vio(adj)- Input Offset
Voltage
(Adjustment)
Vout = 0V, Vin = 0V, Rs = 50 Ohms 3 -5 mV 1
Ave+ Voltage Gain
(Emitter) Rl = 600 Ohms 3, 6 10 V/mV 4
3, 6 8 V/mV 5, 6
Ave- Voltage Gain
(Emitter) Rl = 600 Ohms 3, 6 10 V/mV 4
3, 6 8 V/mV 5, 6
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: +Vcc = +15V, Vcm = 0
trLHC Response Time
(Collector
Output)
Vod(Overdrive) = -5mV, Cl = 50pF,
Vin = -100mV 4, 8 300 nS 7, 8B
4, 8 640 nS 8A
trHLC Response Time
(Collector
Output)
Vod(Overdrive) = 5mV, Cl = 50pF,
Vin = 100mV 4, 8 300 nS 7, 8B
4, 8 500 nS 8A
Note 1: Istb = -2mA at -55 C.
Note 2: Calculated parameter.
Note 3: Use DC tape for Ios and Vio(adj), Ave+ and Ave- as indicated in TAPE NAME section of
this JRETS.
Note 4: Uses AC tape and hardware.
Note 5: Actual min. limit used is 5mA due to test setup.
Note 6: Datalog reading in K = V/mV.
Note 7: Vid is voltage difference between inputs.
Note 8: Group A sample ONLY
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MICROCIRCUIT DATA SHEET
MDLM111-X REV 0B0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
05172HRB2 METAL CAN (H), TO-99, 8LD .200 DIA P.C. (B/I CKT)
05174HRC2 CERPACK (W), 10 LEAD (B/I CKT)
05284HRC2 METAL CAN (H), TO-99, 3LD .200 DIA P.C. (B/I CKT)
05445HRC1 CERDIP (J), 8 LEAD (B/I CKT)
05652HRA2 CERDIP (J), 8 LEAD (B/I CKT)
05815HRA3 LCC (E), TYPE C, 20 TERMINAL (B/I CKT)
09569HRC2 CERPACK (W), 10 LEAD (B/I CKT)
E20ARE LCC (E), TYPE C, 20 TERMINAL(P/P DWG)
H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL CERDIP (J), 8 LEAD (P/P DWG)
P000264A METAL CAN (H), 8 LEAD (PINOUT)
P000265A CERDIP (J), 8 LEAD (PINOUT)
P000314B LCC (E), 20 LEAD (PINOUT)
P000373A CERAMIC SOIC (WG), 10 LEAD (PINOUT)
WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
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N
N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
4 18
5
6
7
8 14
9 10 11 12 13
17
16
15
3 2 1 20 19
N/C
N/C
N/C
IN+
GND N/C V+ N/C
N/C
OUTPUT
N/C
BALANCE/
N/C
BALANCE
N/C
V-
N/C
IN-
N/C
LM111E
20 - LEAD LCC
CONNECTION DIAGRAM
TOP VIEW
P000314B
N/C
STROBE
N
MICROCIRCUIT DATA SHEET
MDLM111-X REV 0B0
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0003786 04/20/01 Rose Malone Initial MDS Release: MDLM111-X, Rev. 0A0
0B0 M0003794 04/20/01 Rose Malone Update MDS: MDLM111-X, Rev. 0A0 to MDLM111-X, Rev.
0B0. Added Note 8 to DC and AC Electrical Sections for
the following parameters Delta Vio/Delta T, Delta
Iio/Delta T, trLHC and trHLC
9
