NTE5427 thru NTE5429
Silicon Controlled Rectifier (SCR)
7 Amp, TO5
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), VRRM
NTE5427 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5428 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5429 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak OffState Voltage (TC = +110°C), VDRM
NTE5427 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5428 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5429 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (TC = +80°C, Conduction Angle of 180°), IT(RMS) 7A. . . . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle at 50 or 60Hz), ITSM 80A. . . . . . . . . . .
Peak GateTrigger Current (3μs Max), IGTM 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (IGT IGTM), PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr 40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg 40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, RthJC 2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak OffState Current IRRM VRRM = Max, VDRM = Max,
TC = +110°C, RGK = 1kΩ
1mA
IDRM 1mA
Maximum OnState Voltage VTM IT = 7A 2 V
DC Holding Current IHOLD 50 mA
DC GateTrigger Current IGT VD = 6VDC, RL = 100Ω 25 mA
DC GateTrigger Voltage VGT VD = 6VDC, RL = 100Ω 1.5 V
Gate Controlled TurnOn Time tgt IG x 3GT 2μs
I2t for Fusing Reference I2tFor SCR Protection 2.6 A2sec
Critical Rate of OffState Voltage dv/dt
(critical)
Gate Open, TC = +100°C100 V/μs
.250
(6.35)
Max
1.500
(38.1)
Min
.352 (8.95) Dia Max
.325 (8.13) Dia Max
45°
.031 (.793)
Cathode
Gate
Anode
.019 (0.5)