PRELIMINARY DATA
UHF COMMUNICATIONS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.500 6LFL (M111)
epoxysealed
.REFRACTORY/GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.METAL/CERAMIC PACKAGE
.EMITTER BALLASTED
.20:1 VSWR CAPABILITY
.POUT =25 W MIN. WITH 9 dB GAIN
DESCRIPTION
The SD4013 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for superior ruggedness.
The SD4013 can withstand 20:1 VSWRunder rated
operating conditions andis internally input matched
to optimize power gain and efficiency over the
band.
PIN CONNECTION
BRANDING
SUMIL25
ORDER CODE
SD4013
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 3.5 V
ICDevice Current 3.0 A
PDISS Power Dissipation 70 W
TJJunction Temperature +200 °C
TSTG Storage Temperature −65 to +150 °C
RTH(j-c) Junction-Case Thermal Resistance 2.5 °C/W
SD4013
1. Collector 3. Emitter
2. Base 4. Emitter
THERMAL DATA
November 1992 1/5
ELECTRICAL SPECIFICATIONS (Tcase =25°C)
Symbol Test Conditions Value Unit
Min. Typ. Max.
POUT f=400 MHz VCC =28V 25 — — W
PIN f=400 MHz VCC =28V — — 3.15 W
ηcf=400 MHz VCC =28V 50 55 — %
GPf=400 MHz VCC =28V 9.0 10.5 — dB
VSWR f =400 MHz VCC =28V 20:1———
C
OB f=1 MHz VCB =28V — — 30 pF
STATIC
Symbol Test Conditions Value Unit
Min. Typ. Max.
BVCBO IC=50mA IE=0mA 60 — — V
BVEBO IE=5mA IC=0mA 3.5 — — V
BVCES IC=50mA VBE =0mA 60 — — V
ICBO VCB =30V IE=0mA — — 3.0 mA
hFE VCE =5V IC=500mA 10 30 120 —
DYNAMIC
SD4013
2/5
TYPICAL PERFORMANCE
POWER INPUT vs POWER OUTPUT
225 MHz
400 MHz
VCC =28V
DC SAFE OPERATING AREA
POWER OUTPUT vs COLLECTOR
SUPPLY VOLTAGE
f=400 MHz
SD4013
3/5
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
IMPEDANCE DATA
ZIN
ZCL
FREQ. ZIN (Ω)Z
CL (Ω)
225 MHz 1.40 + j 2.5 7.55 + j 0.0
275 MHz 1.25 + j 3.3 7.5 −j 0.05
300 MHz 1.10 + j 4.0 7.5 −j 1.00
350 MHz 1.10 + j 4.7 6.8 −j 1.15
400 MHz 1.70 + j 5.1 6.0 −j 1.30
SD4013
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0111
Information furnished is believed tobe accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder any patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life supportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - HongKong - Italy- Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-
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SD4013
5/5
