SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION.. FEATURES *Normal Voltage Tolerance about 5% B C DIM MILLIMETERS A 4.2~5.2 B MIN 25.4 2.0~2.7 C 0.71~0.86 D A B D DO-41 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT PD* 1 W Tj 175 Tstg -65175 Power Dissipation Junction Temperature Storage Temperature Range Marking * Valid provided that electrodes at a distance of 10mm from case are kept at 1N4756A K Type Name Lot No ambient temperature. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Zener Voltage VZ IZ=5.5mA 44.65 47 49.35 V Dynamic Impedance Z Z* IZ=5.5mA - - 80 Knee Dynamic Impedance ZZK* IZ=0.25mA - - 1,500 IR VR=35.8V - - 5 A Reverse Current * The Zener impedance is derived from the 1KHZ AC voltage which resuits when an AC current having an RMS value equal to 10% the Zener current IZT or IZK is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units. 2008. 6. 18 Revision No : 0 1/1