2008. 6. 18 1/1
SEMICONDUCTOR
TECHNICAL DATA
1N4756A
ZENER DIODE
SILCON EPITAXIAL PLANAR DIODE
Revision No : 0
CONSTANT VOLTAGE REGULATION APPLICATION.
.
FEATURES
·Normal Voltage Tolerance about ±5%
MAXIMUM RATING (Ta=25℃)
DO-41
MILLIMETERS
C
D
A
B
DIM
4.2~5.2
MIN 25.4
2.0~2.7
0.71~0.86
B
D
C
B
A
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation PD*1W
Junction Temperature Tj175 ℃
Storage Temperature Range Tstg -65～175 ℃
* The Zener impedance is derived from the 1KHZ AC voltage which resuits when an AC current having an RMS value equal to 10% the
Zener current IZT or IZK is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown
curve and to eliminate unstable units.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Zener Voltage VZIZ=5.5mA 44.65 47 49.35 V
Dynamic Impedance ZZ* IZ=5.5mA - - 80 Ω
Knee Dynamic Impedance ZZK* IZ=0.25mA - - 1,500 Ω
Reverse Current IRVR=35.8V - - 5 μA
Marking
1N4756A
KLot No
Type Name
* Valid provided that electrodes at a distance of 10mm from case are kept at
ambient temperature.
