2N5564/5565/5566 Matched N-Channel JFET Pairs Product Summary VGS1 - VGS2 Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20 Features Benefits Applications Wideband Differential Amps High-Speed, Temp-Compensated, Single-Ended Input Amps High-Speed Comparators Impedance Converters Matched Switches Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise: 12 nVHz @ 10 Hz Good CMRR: 76 dB Minimum Parasitics Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals Maximum High Frequency Performance Description The 2N5564/5565/5566 are matched pairs of JFETs mounted in a TO-71 package. This two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. This series features high breakdown voltage (V(BR)DSS typically > 55 V), high gain (typically > 9 mS), and <5-mV offset between the two die. The hermetically-sealed TO-71 package is available with full military processing (see Military Information). For similar products see the low-noise U/SST401 series, and the low-leakage 2N5196/5197/5198/5199 data sheets. TO-71 S1 G2 1 D1 6 2 D2 5 3 4 G1 S2 Top View Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -40 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150C Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V Power Dissipation : Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300 C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200C Per Sidea . . . . . . . . . . . . . . . . . 325 mW Totalb . . . . . . . . . . . . . . . . . . . . 650 mW Notes a. Derate 2.6 mW/C above 25C b. Derate 5.2 mW/C above 25C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70254. Siliconix P-37406--Rev. C, 25-Jul-94 1 2N5564/5565/5566 Specificationsa Limits 2N5564 2N5565 2N5566 Symbol Test Conditions Typb V(BR)GSS IG = -1 A, VDS = 0 V -55 -40 VGS(off) VDS = 15 V, ID = 1 nA -2 -0.5 -3 -0.5 -3 -0.5 -3 Saturation Drain Currentc IDSS VDS = 15 V, VGS = 0 V 20 5 30 5 30 5 30 mA -100 -100 -100 pA IGSS VGS = -20 V, VDS = 0 V -5 Gate Reverse Current -200 -200 -200 nA Parameter Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Currentd Drain-Source On-Resistance Gate-Source Voltaged Gate-Source Forward Voltage -40 -40 V IG TA = 150C -10 VDG = 15 V, ID = 2 mA -3 pA TA = 125C -1 nA rDS(on) VGS = 0 V, ID = 1 mA 50 VGS VDG = 15 V, ID = 2 mA -1.2 VGS(F) IG = 2 mA , VDS = 0 V 0.7 100 100 100 1 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en Noise Figure NF VDSS = 15 V, ID = 2 mA f = 1 kHz VDS = 15 V, ID = 2 mA f = 100 MHz 9 7.5 35 8.5 12.5 7.5 45 7 12.5 7.5 45 7 12.5 mS 45 S mS 7 10 12 12 12 2.5 3 3 3 12 50 50 50 nV Hz 1 1 1 dB VDS = 15 V V, ID = 2 mA f = 1 MHz VDS = 15 V, ID = 2 mA f = 10 Hz pF RG = 10 M Matching Differential Gate-Source Voltage |V GS1-V GS2| VDG = 15 V, ID = 2 mA 5 10 20 mV Gate-Source Voltage Differential Change with Temperature |V GS1-V GS2| T VDG = 15 V, ID = 2 mA TA = -55 to 125C 10 25 50 V/ C Saturation Drain Current Ratiod I DSS1 I DSS2 VDS = 15 V, VGS = 0 V 0.98 0.95 1 0.95 1 0.95 1 Transconductance Ratio VDS = 15 V, ID = 2 mA f = 1 kHz 0.98 0.95 1 1 1 CMRR VDG = 10 to 20 V ID = 2 mA 76 Common Mode Rejection Ratiod Notes a. TA = 25C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 s duty cycle v3%. d. This parameter not registered with JEDEC. 2 dB NCBD Siliconix P-37406--Rev. C, 25-Jul-94 2N5564/5565/5566 Typical Characteristics On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 160 80 IDSS rDS 60 120 40 80 20 40 0 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 15 V, VGS = 0 -2 -4 -6 -8 TA = 25C 80 VGS(off) = -2 V 60 40 20 0 0 0 On-Resistance vs. Drain Current 100 200 I DSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 100 -10 1 10 VGS(off) - Gate-Source Cutoff Voltage (V) On-Resistance vs. Temperature tr approximately independent of ID VDG = 5 V, RG = 50 VGSL = -10 V ID = 1 mA rDS changes Y 0.7%/C 160 4 Switching Time (ns) rDS(on) - Drain-Source On-Resistance ( ) Turn-On Switching 5 200 120 VGS(off) = -2 V 80 40 tr 3 td(on) @ ID = 12 mA 2 1 td(on) @ ID = 3 mA 0 0 -55 -35 -15 25 5 45 65 85 105 0 125 TA - Temperature (C) 50 gfs and gos @ VDS = 15 V VGS = 0 V, f = 1 kHz 40 200 10 100 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) Siliconix P-37406--Rev. C, 25-Jul-94 -8 -10 -10 24 Switching Time (ns) 200 g - Output Conductance ( S) gos 20 0 -6 td(off) independent of device VGS(off) VDG = 5 V, VGSL = -10 V 400 30 -4 Turn-Off Switching 30 500 gfs -2 VGS(off) - Gate-Source Cutoff Voltage (V) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage g fs - Forward Transconductance (mS) 100 ID - Drain Current (mA) tf 18 VGS(off) = -2 V 12 td(off) 6 0 0 2 4 6 8 10 ID - Drain Current (mA) 3 2N5564/5565/5566 Typical Characteristics (Cont'd) Output Characteristics 14 VGS(off) = -1.5 V VGS(off) = -2 V VGS = 0 V 12 10 -0.2 V 8 -0.3 V 6 -0.4 V 4 -0.5 V -0.6 V 24 TA = -55C 25C 16 8 125C 2 -0.7 V 0 0 0 4 8 12 16 20 0 VDS - Drain-Source Voltage (V) Output Characteristics 5 VGS = 0 V 24 Capacitance (pF) -0.3 V -0.4 V 3 -0.5 V 2 -0.6 V 18 12 -0.7 V 1 -2 f = 1 MHz VDS = 0 V -0.2 V 4 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) Capacitance vs. Gate-Source Voltage 30 VGS(off) = -1.5 V -0.1 V I D - Drain Current (mA) VDS = 15 V 32 -0.1 V I D - Drain Current (mA) I D - Drain Current (mA) Transfer Characteristics 40 Ciss 6 -0.8 V Crss -0.9 V 0 0 0.2 0.4 0.6 0.8 0 1 0 -16 -20 VDG = 15 V ID = 10 mA TA = 25C ID = 10 mA gig big 10 1 mA 100 pA 1 mA 10 pA 10 mA (mS) I G - Gate Leakage 1 nA -12 100 IGSS @ 25C TA = 125C -8 Common-Gate Input Admittance Gate Leakage Current 10 nA -4 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) IGSS @ 25C 1 TA = 25C 1 pA IG(on) @ ID 0.1 pA 0.1 0 6 12 18 24 VDG - Drain-Gate Voltage (V) 4 30 100 200 500 1000 f - Frequency (MHz) Siliconix P-37406--Rev. C, 25-Jul-94 2N5564/5565/5566 Typical Characteristics (Cont'd) Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 10 VDG = 15 V ID = 10 mA TA = 25C VDG = 15 V ID = 10 mA TA = 25C -gfg bfg -brg 1 10 (mS) (mS) gfg 0.1 1 0.01 100 0.1 100 200 500 1000 200 f - Frequency (MHz) 500 1000 f - Frequency (MHz) Common-Gate Output Admittance Noise Voltage vs. Frequency 100 100 VDG = 15 V ID = 10 mA TA = 25C (nV / Hz) VDS = 15 V bog (mS) 10 e n - Noise Voltage gog 1 0.1 10 ID = 1 mA ID = 10 mA 1 100 200 500 1000 10 f - Frequency (MHz) 1k 10 k 100 k Transconductance vs. Drain Current 100 VDS = 15 V f = 1 kHz VGS(off) = -2 V g fs - Forward Transconductance (mS) VGS(off) = -2 V 100 f - Frequency (Hz) Output Conductance vs. Drain Current 1000 g - Output Conductance ( S) +grg -grg TA = -55C 100 25C 125C 10 VDS = 15 V f = 1 kHz TA = -55C 25C 10 125C 1 0.1 1.0 ID - Drain Current (mA) Siliconix P-37406--Rev. C, 25-Jul-94 10 0.1 1.0 10 ID - Drain Current (mA) 5