ATP212 Ordering number : ENA1507 SANYO Semiconductors DATA SHEET ATP212 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * * * Low ON-resistance. Large current. Slim package. 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Unit 60 PW10s, duty cycle1% V 35 A 105 A 40 W Channel Temperature PD Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 19 mJ 18 A Avalanche Current *2 Tc=25C V 20 Note : *1 VDD=10V, L=100H, IAV=18A *2 L100H, Single pulse Electrical Characteristics at Ta=25C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=60V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=16V, VDS=0V Marking : ATP212 Ratings min typ Unit max 60 V 1 A 10 A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 62409PA TK IM TC-00001998 No. A1507-1/4 ATP212 Continued from preceding page. Parameter Symbol Conditions Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=9A, VGS=4.5V Ratings min typ 1.2 VDS=10V, ID=1mA VDS=10V, ID=18A ID=18A, VGS=10V Unit max 2.6 35 V S 17 23 m 23 33 m 25 37 m RDS(on)3 ID=5A, VGS=4V Input Capacitance Ciss VDS=20V, f=1MHz 1820 pF Output Capacitance Coss VDS=20V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 100 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16 ns Rise Time tr See specified Test Circuit. 110 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 125 ns Fall Time tf See specified Test Circuit. 87 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=35A 34.5 nC VDS=30V, VGS=10V, ID=35A VDS=30V, VGS=10V, ID=35A IS=35A, VGS=0V 6.5 nC 6.8 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD 0.96 1.2 V Package Dimensions unit : mm (typ) 7057-001 1.5 4.6 0.5 7.3 0.55 0.7 0.5 3 0.8 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 1.7 2 1 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 SANYO : ATPAK Switching Time Test Circuit 10V 0V VDD=30V VIN ID=18A RL=1.67 VIN D PW=10s D.C.1% VOUT G ATP212 P.G 50 S No. A1507-2/4 ATP212 VGS=2.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 45 ID=5A 9A 35 18A 30 25 20 15 10 5 1 2 3 4 5 6 7 8 9 C C 5 10 = Tc 7 --2 75 C 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 5 4.5 5.0 5.5 IT14742 5A I D= 0V, . 4 = VGS =9A , ID 4.5V = 18A VGS I D= , V 0 . =10 VGS 30 25 20 15 10 5 --25 0 25 50 75 100 125 150 IT14744 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT14746 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V f=1MHz 3 3 Ciss Ciss, Coss, Crss -- pF 2 2 td(off) 100 7 tf 5 tr 3 2 1000 7 5 3 2 Coss td(on) 100 10 7 0.1 4.0 Single pulse 35 IT14745 SW Time -- ID 7 Switching Time, SW Time -- ns 3 3.5 40 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.0 45 100 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 25 2 2.5 Case Temperature, Tc -- C VDS=10V Single pulse 3 2.0 50 IT14743 | yfs | -- ID 1.5 RDS(on) -- Tc 0 --50 10 11 12 13 14 15 16 Gate-to-Source Voltage, VGS -- V 7 1.0 Gate-to-Source Voltage, VGS -- V 0 0 0.5 55 Tc=25C Single pulse 40 0 IT14741 RDS(on) -- VGS 50 0 2.0 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 10 5C 25C --25 C 0.2 55 5 20 Tc= 7 0 Drain-to-Source Voltage, VDS -- V 5 30 25 5 40 Tc= 75 C C 10 0 Tc= --25 C 75 C V 3.0V --25 15 50 C 20 VDS=10V Single pulse 3.5V Drain Current, ID -- A 25 ID -- VGS 60 4.5 16.0 10.0V V 8.0V 6.0V Drain Current, ID -- A 30 4.0 V Tc=25C Single pulse 25 C ID -- VDS 35 Crss 7 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14747 5 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT14748 No. A1507-3/4 ATP212 VGS -- Qg 10 7 6 5 4 5 10 15 20 25 30 PD -- Tc 45 35 25 20 15 10 5 0 60 80 100 Tc=25C Single pulse 2 3 5 7 1.0 120 Case Temperature, Tc -- C 140 160 IT14751 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V Avalanche Energy derating factor -- % 30 40 Operation in this area is limited by RDS(on). EAS -- Ta 120 35 20 s IT14749 40 0 0m 0.1 0.1 40 ms s on ati er 3 2 10 0 s 10 3 2 1 10 10 10 7 5 1.0 7 5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 3 2 2 0 ID=35A op 3 PW10s DC Drain Current, ID -- A 8 0 IDP=105A 100 7 5 s 1m Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=30V ID=35A 5 7 100 IT14750 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- C 175 IT10478 Note on usage : Since the ATP212 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice. PS No. A1507-4/4