© 1999 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 21N50 21 A
24N50 24 A
26N50 26 A
IDM TC= 25°C, pulse width limited by TJM 21N50 84 A
24N50 96 A
26N50 104 A
IAR TC= 25°C 21N50 21 A
24N50 24 A
26N50 26 A
EAR TC= 25°C30mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,5V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 3 00 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 4 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 µA
VGS = 0 V TJ = 125°C1mA
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
TO-204 AE (IXFM)
DG
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
G = Gate, D = Drain,
S = Source, TAB = Drain
91525H (9/99)
(TAB)
VDSS ID25 RDS(on)
IXFH/IXFM21N50 500 V 21 A 0.25 ΩΩ
ΩΩ
Ω
IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ΩΩ
ΩΩ
Ω
IXFH/IXFT26N50 500 V 26 A 0.20 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
HiPerFETTM
Power MOSFETs
TO-268 (D3) Case Style
(TAB)
G
S
http://store.iiic.cc/
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
RDS(on) VGS = 10 V, ID = 0.5 ID25 21N50 0.25 Ω
24N50 0.23 Ω
26N50 0.20 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 11 21 S
Ciss 4200 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 450 pF
Crss 135 pF
td(on) 16 25 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 45 ns
td(off) RG= 2 Ω (External) 65 80 ns
tf30 40 ns
Qg(on) 135 160 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 28 40 nC
Qgd 62 85 nC
RthJC 0.42 K/W
RthCK (TO-247 Case Style) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 21N50 21 A
24N50 24 A
26N50 26 A
ISM Repetitive; 21N50 84 A
pulse width limited by TJM 24N50 96 A
26N50 104 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr TJ = 25°C 250 ns
TJ = 125°C 400 ns
QRM TJ = 25°C1µC
TJ = 125°C2µC
IRM TJ = 25°C10A
TJ = 125°C15A
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 1.53 3.42 .060 .135
∅b 1.45 1.60 .057 .063
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 11.18 12.19 .440 .480
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 12.58 13.33 .495 .525
R1 3.33 4.77 .131 .188
s 16.64 17.14 .655 .675
TO-204 AE (IXFM) Outline
Pins: 1 - Gate, 2 - Source, Case - Drain
TO-247 AD (IXFH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Min. Recommended Footprint
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IXFH21N50 IXFH24N50 IXFH26N50
IXFM21N50 IXFM24N50 IXFM26N50
IXFT24N50 IXFT26N50
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© 1999 IXYS All rights reserved
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- No rmalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 BVDSS
VGS(th)
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
5
10
15
20
25
30
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Norm a lized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 5 10 15 20 25 30 35 40 45 50
R
DS(on)
- Norm a lized
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
VGS - V olts
012345678910
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
TJ = 25°C
VDS = 10V
VDS - Volts
0 5 10 15 20 25 30 35
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
6V
5V
TJ = 25°C
VGS = 1 0V
VGS = 15V
ID = 12A
21N50
24N50
26N50
TJ = 25°C
VGS = 10V
7V
IXFH21N50 IXFH24N50 IXFH26N50
IXFM21N50 IXFM24N50 IXFM26N50
IXFT24N50 IXFT26N50
http://store.iiic.cc/
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage
Fig.11 Transient Thermal Impedance
VDS - Volts
1 10 100
I
D
- Amperes
0.1
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
VSD - Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
VDS - Vo lts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
D=0.01
Single p uls e
Crss
Coss
VDS = 250V
ID = 12.5A
IG = 10mA
500
10µs
100µs
1ms
10ms
100ms
Limited by RDS(on)
Ciss
TJ = 25°C
TJ = 125° C
f = 1 Mhz
VDS = 25V
IXFH21N50 IXFH24N50 IXFH26N50
IXFM21N50 IXFM24N50 IXFM26N50
IXFT24N50 IXFT26N50
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