DG9408E, DG9409E
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3.2 , Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V,
4- / 8-Channel Analog Multiplexers
DESCRIPTION
The DG9408E, DG9409E uses BiCMOS wafer fabrication
technology that allows the DG9408E, DG9409E to operate
on single and dual supplies. Single supply voltage
ranges from 3 V to 16 V while dual supply operation is
recommended with ± 3 V to ± 8 V.
The DG9408E is an 8-channel single-ended analog
multiplexer designed to connect one of eight inputs to a
common output as determined by a 3-bit binary address
(A0, A1, A2). The DG9409E is a dual 4-channel differential
analog multiplexer designed to connect one of four
differential inputs to a common dual output as determined
by its 2-bit binary address (A0, A1). Break-before-make
switching action to protect against momentary crosstalk
between adjacent channels.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with lead (Pb)-free device terminations. The DG9408E,
DG9409E are offered in a QFN package that has a
nickel-palladium-gold device terminations and is
represented by the lead (Pb)-free “-E4” suffix. The
nickel-palladium-gold device terminations meet all the
JEDEC® standards for reflow and MSL ratings.
FEATURES
• 3 V to 16 V single supply or ± 3 V to ± 8 V dual
supply operation
• Low on-resistance - RON: 3.2 typ.
• Fast switching: tON - 36 ns, tOFF - 24 ns
• Break-before-make guaranteed
• Low leakage
• TTL, CMOS, LV logic (3 V) compatible
• 2500 V ESD protection (HBM)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Fast switching speed
• Low switch resistance
• Wide operation voltage range
• Simple logic interface
APPLICATIONS
• Automatic test equipment
• Process control and automation
• Data acquisition systems
• Meters and instruments
• Medical and healthcare systems
• Communication systems
• Audio and video signal routing
• Relay replacement
• Battery powered systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Note
• QFN16 package central exposed pad has no electrical connection inside the chip. It can be connected GND, V+, V-, or left floating.
49
GND S2a
S4b
S3b
S3a
EN
S2b S1a
1
2
3
12
11
10
567
8
16 15 14 13
A0V+ A1S4a
S1b DbV- Da
Decoder / driver
Top view
DG9409E
QFN16
5
GND S6
S4
S3
S7
EN
S2S5
1
2
3
12
11
10
49
5678
16 15 14 13
A0V+ A1S8
S1A2V- D
Decoder / driver
Top view
DG9408E
QFN16
DG9408E, DG9409E
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TRUTH TABLE AND ORDERING INFORMATION
X = do not care
For low and high voltage levels for VAX and VEN consult “Digital Control” parameters for specific V+ operation. See specifications
tables for:
Single supply 12 V
Dual supply V+ = 5 V, V- = -5 V
Single supply 5 V
Single supply 3 V
Notes
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 23.5 mW/°C above 70 °C.
d. Manual soldering with soldering iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead
terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip
cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TRUTH TABLE DG9408E
A2A1A0EN ON SWITCH
XXX1 None
0000 1
0010 2
0100 3
0110 4
1000 5
1010 6
1100 7
1110 8
TRUTH TABLE DG9409E
A1A0EN ON SWITCH
XX1 None
000 1
010 2
100 3
110 4
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER MIN. ORDER / PACK. QUANTITY
-40 °C to +85 °C 16-pin QFN (4 mm x 4 mm)
(variation 1)
DG9408EDN-T1-GE4 Tape and reel, 2500 units
DG9409EDN-T1-GE4 Tape and reel, 2500 units
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER LIMIT UNIT
Voltage referenced V+ to V- -0.3 to +18
VGND to V- 18
Digital inputs a, VS, VD(V-) - 0.3 to (V+) + 0.3
Current (any terminal except S or D) 30
mAContinuous current, S or D 100
Peak current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 200
Package solder reflow conditions (lead (Pb)-free assembly) d 16-pin (4 x 4 mm) QFN 260 +0 / -5 °C
Storage temperature -65 to +150
Power dissipation (package) b, (TA = 70 °C) 16-pin (4 x 4 mm) QFN c1880 mW
ESD human body model (HBM), per ANSI / ESDA / JEDEC® JS-001 2500 V
Latch up current, per JESD78 400 mA
DG9408E, DG9409E
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SPECIFICATIONS (Single Supply 12 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 12 V, ± 10 %, V- = 0 V
VA, VEN = 0.8 V or 2.4 V f
TEMP.b
LIMITS
-40 °C to +85 °C UNIT
MIN. cTYP. d MAX. c
Analog Switch
Analog signal range eVANALOG Full 0 - 12 V
On-resistance RON V+ = 10.8 V, VD = 2 V or 9 V, IS = 50 mA
sequence each switch on
Room - 3.2 7
Full - 7.5
R
ON
match between channels
g
RON
V+ = 10.8 V, VD = 2 V or 9 V, IS = 50 mA
Room - - 3.6
On-resistance flatness i RON
flatness Room - - 8
Switch off leakage current
IS(off)
VEN = 2.4 V, VD = 11 V or 1 V, VS = 1 V or 11 V
Room -2 - 2
nA
Full -15 - 15
ID(off)
Room -2 - 2
Full -15 - 15
Channel on leakage current ID(on) VEN = 0 V, VS = VD = 1 V or 11 V Room -2 - 2
Full -15 - 15
Digital Control
Logic high input voltage VINH Full 2.4 - - V
Logic low input voltage VINL Full - - 0.8
Input current IIN VAX = VEN = 2.4 V or 0.8 V Full -1 - 1 μA
Dynamic Characteristics
Transition time tTRANS
VS1 = 8 V, VS8 = 0 V, (DG9408E)
VS1b = 8 V, VS4b = 0 V, (DG9409E)
see fig. 2
Room - 40 71
ns
Full - - 75
Break-before-make time tBBM VS(all) = VDA = 5 V
see fig. 4
Room 2 20 -
Full - - -
Enable turn-on time tON(EN)VAX = 0 V, VS1 = 5 V (DG9408E)
VAX = 0 V, VS1b = 5 V (DG9409E)
see fig. 3
Room - 36 70
Full - - 75
Enable turn-off time tOFF(EN)
Room - 24 44
Full - - 46
Charge injection eQC
L = 1 nF, VGEN = 0 V, RGEN = 0 Room - 4.5 - pC
Off isolation e, h OIRR f = 100 kHz, RL = 1 kRoom - -83 - dB
Crosstalk eXTALK Room - -89 -
Source off capacitance eCS(off) f = 1 MHz, VS = 0 V, VEN = 2.4 V DG9408E Room - 17 -
pF
DG9409E Room - 16 -
Drain off capacitance eCD(off) f = 1 MHz, VD = 0 V, VEN = 2.4 V DG9408E Room - 134 -
DG9409E Room - 67 -
Drain on capacitance eCD(on) f = 1 MHz, VD = 0 V, VEN = 0 V DG9408E Room - 154 -
DG9409E Room - 86 -
Power Supplies
Power supply current I+ VEN = VA = 0 V or V+ Room - - 1 μA
DG9408E, DG9409E
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SPECIFICATIONS (Dual Supply V+ = 5 V, V- = -5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, V- = -5 V, ± 10 %
VA, VEN = 0.8 V or 2 V f
TEMP.
b
LIMITS
-40 °C to +85 °C UNIT
MIN. cTYP. d MAX.
c
Analog Switch
Analog signal range eVANALOG Full -5 - 5 V
On-Resistance RON V+ = 4.5 V, V- = -4.5 V, VD = ± 3.5 V, IS = 50 mA
sequence each switch on
Room - 4 8
Full - - 8.5
R
ON
match between channels
g
RON
V+ = 4.5 V, V- = -4.5 V, VD = ± 3.5 V, IS = 50 mA
Room - - 3.6
On-resistance flatness i RON
Flatness Room - - 8.2
Switch off leakage current a
IS(off) V+ = 5.5, V- = -5.5 V
VEN = 2.4 V, VD = ± 4.5 V, VS = ± 4.5 V
Room -2 - 2
nA
Full -15 - 15
ID(off)
Room -2 - 2
Full -15 - 15
Channel on leakage current aID(on) V+ = 5.5 V, V- = -5.5 V
VEN = 0 V, VD = ± 4.5 V, VS = ± 4.5 V
Room -2 - 2
Full -15 - 15
Digital Control
Logic high input voltage VINH Full 2 - - V
Logic low input voltage VINL Full - - 0.8
Input current aIIN VAX = VEN = 2 V or 0.8 V Full -1 - 1 μA
Dynamic Characteristics
Transition time etTRANS
VS1 = 3.5 V, VS8 = -3.5 V, (DG9408E)
VS1b = 3.5 V, VS4b = -3.5 V, (DG9409E)
see fig. 2
Room - 47 65
ns
Full - - 70
Break-before-make time etBBM VS(all) = VDA = 3.5 V
see fig. 4
Room 1 13 -
Full---
Enable turn-on time etON(EN)VAX = 0 V, VS1 = 3.5 V (DG9408E)
VAX = 0 V, VS1b = 3.5 V (DG9409E)
see fig. 3
Room - 54 70
Full - - 76
Enable turn-off time etOFF(EN)
Room - 28 40
Full - - 43
Source off capacitance eCS(off) f = 1 MHz, VS = 0 V, VEN = 2 V DG9408E Room - 15 -
pF
DG9409E Room - 14 -
Drain off capacitance eCD(off) f = 1 MHz, VD = 0 V, VEN = 2 V DG9408E Room - 126 -
DG9409E Room - 63 -
Drain on capacitance eCD(on) f = 1 MHz, VD = 0 V, VEN = 0 V DG9408E Room - 153 -
DG9409E Room - 89 -
Power Supplies
Power supply current I+ VEN = VA = 0 V or V+ Room - - 1 μA
I- Room -1 - -
DG9408E, DG9409E
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SPECIFICATIONS (Single Supply 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, ± 10 %, V- = 0 V
VA, VEN= 0.8 V or 2 V f
TEMP.
b
LIMITS
-40 °C to +85 °C UNIT
MIN. cTYP. d MAX.
c
Analog Switch
Analog signal range eVANALOG Full 0 - 5 V
On-resistance RON V+ = 4.5 V, VD or VS = 1 V or 3.5 V, IS = 50 mA Room - 6.8 10.5
Full - - 11
RON match between
channels gRON
V+ = 4.5 V, VD = 1 V or 3.5 V, IS = 50 mA
Room - - 3.6
On-resistance flatness iRON
Flatness Room - - 9
Switch off leakage current a
IS(off) V+ = 5.5 V
VS = 1 V or 4 V, VD = 4 V or 1 V
Room -2 - 2
nA
Full -15 - 15
ID(off)
Room -2 - 2
Full -15 - 15
Channel on leakage current
a
ID(on) V+ = 5.5 V
VD = VS = 1 V or 4 V, sequence each switch on
Room -2 - 2
Full -15 - 15
Digital Control
Logic high input voltage VINH V+ = 5 V Full 2 - - V
Logic low input voltage VINL Full - - 0.8
Input current aIIN VAX = VEN = 2 V or 0.8 V Full -1 - 1 μA
Dynamic Characteristics
Transition time etTRANS
VS1 = 3.5 V, VS8 = 0 V, (DG9408E)
VS1b = 3.5 V, VS4b = 0 V, (DG9409E)
see fig. 2
Room - 79 97
ns
Full - - 112
Break-before-make time etOPEN VS(all) = VDA = 3.5 V
see fig. 4
Room 2 35 -
Full - - -
Enable turn-on time etON(EN)VAX = 0 V, VS1 = 3.5 V (DG9408E)
VAX = 0 V, VS1b = 3.5 V (DG9409E)
see fig. 3
Room - 83 95
Full - - 116
Enable turn-off time etOFF(EN)
Room - 36 57
Full - - 61
Charge injection eQC
L = 1 nF, RGEN = 0, VGEN = 0 V Room - 3.7 - pC
Off isolation e, h OIRR RL = 1 k, f = 100 kHz Room - -83 - dB
Crosstalk eXTALK Room - -90 -
Source off capacitance eCS(off) f = 1 MHz, VS = 0 V, VEN = 0 V DG9408E Room - 19 -
pF
DG9409E Room - 18 -
Drain off capacitance eCD(off) f = 1 MHz, VD = 0 V, VEN = 2 V DG9408E Room - 149 -
DG9409E Room - 74 -
Drain on capacitance eCD(on) f = 1 MHz, VD = 0 V, VEN = 0 V DG9408E Room - 170 -
DG9409E Room - 94 -
Power Supplies
Power supply current I+ VEN = VA = 0 V or V+ Room - - 1 μA
DG9408E, DG9409E
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Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDON = RDON max. - RDON min.
h. Worst case isolation occurs on channel 4 due to proximity to the drain pin.
i. RDON flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal.
SPECIFICATIONS (Single Supply 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, ± 10 %, V- = 0 V
VEN = 0.4 V or 1.8 V f
TEMP.
b
LIMITS
-40 °C to +85 °C UNIT
MIN. cTYP. d MAX.c
Analog Switch
Analog signal range eVANALOG Full 0 - 3 V
On-resistance RON V+ = 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA Room - 13 25.5
Full - - 26.5
R
ON
match between channels
g
RON
V+ = 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA
Room - - 3.6
On-resistance flatness iRON
Flatness Room - - 13
Switch off leakage current a
IS(off) V+ = 3.3 V
VS = 2 V or 1 V, VD = 1 or 2 V
Room -2 - 2
nA
Full -15 - 15
ID(off)
Room -2 - 2
Full -15 - 15
Channel on leakage current aID(on) V+ = 3.3 V
VD = VS = 1 V or 2 V, sequence each switch on
Room -2 - 2
Full -15 - 15
Digital Control
Logic high input voltage VINH Full 1.8 - - V
Logic low input voltage VINL Full - - 0.4
Input current aIIN VAX = VEN = 1.8 V or 0.4 V Full -1 - 1 μA
Dynamic Characteristics
Transition time tTRANS
VS1 = 1.5 V, VS8 = 0 V, (DG9408E)
VS1b = 1.5 V, VS4b = 0 V, (DG9409E)
see fig. 2
Room - 169 245
ns
Full - - 278
Break-before-make time tBBM VS(all) = VDA = 1.5 V
see fig. 4
Room 2 96 -
Full - - -
Enable turn-on time tON(EN)VAX = 0 V, VS1 = 1.5 V (DG9408E)
VAX = 0 V, VS1b =1.5 V (DG9409E)
see fig. 3
Room - 202 255
Full - - 272
Enable turn-off time tOFF(EN)
Room - 72 97
Full - - 104
Charge injection eQC
L = 1 nF, RGEN = 0, VGEN = 0 V Room - 2.1 - pC
Off isolation e, h OIRR f = 100 kHz, RL = 1 kRoom - -83 - dB
Crosstalk eXTALK Room - -90 -
Source off capacitance eCS(off) f = 1 MHz, VS = 0 V, VEN = 1.8 V DG9408E Room - 20 -
pF
DG9409E Room - 19 -
Drain off capacitance eCD(off) f = 1 MHz, VD = 0 V, VEN = 1.8 V DG9408E Room - 159 -
DG9409E Room - 79 -
Drain on capacitance eCD(on) f = 1 MHz, VD = 0 V, VEN = 0 V DG9408E Room - 179 -
DG9409E Room - 98 -
Power Supplies
Power supply current I+ VEN = VA = 0 V or V+ Room - - 1 μA
DG9408E, DG9409E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10121416
Axis Title
1st line
2nd line
2nd line
RON - On-Reistance (Ω)
VD- Analog Voltage (V)
2nd line
V+ = +3 V, IS= 5 mA
V+ = +5 V, I S= 50 mA
V+ = +12 V, IS= 50 mA
V+ = +16 V, IS= 50 mA
TA= 25 °C
10
100
1000
10000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
024681012
Axis Title
1st line
2nd line
2nd line
RON - On-Reistance (Ω)
VD- Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +12 V
IS= 50 mA
10
100
1000
10000
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
012345
Axis Title
1st line
2nd line
2nd line
RON - On-Reistance (Ω)
VD- Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +5 V
IS= 50 mA
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
22
24
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Axis Title
1st line
2nd line
2nd line
RON - On-Reistance (Ω)
VD- Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +3 V
I
S
= 5 mA
10
100
1000
10000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-8-6-4-202468
1st line
2nd line
2nd line
RON - On-Reistance (Ω)
VD- Analog Voltage (V)
2nd line
V± = ± 5 V
TA= 25 °C
IS= 50 mA
V± = ± 8 V
10
100
1000
10000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-5-4-3-2-1012345
Axis Title
1st line
2nd line
2nd line
RON - On-Reistance (Ω)
VD- Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V± = ± 5 V
IS= 50 mA
DG9408E, DG9409E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Leakage Current vs. Analog Voltage
Leakage Current vs. Analog Voltage
Leakage Current vs. Temperature
Supply Current vs. Temperature
Loss, OIRR, XTALK vs. Frequency
Loss, OIRR, XTALK vs. Frequency
10
100
1000
10000
-250
-200
-150
-100
-50
0
50
100
-5-4-3-2-1012345
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
VD- Analog Voltage (V)
2nd line
I
D(OFF)
I
D(ON)
I
S(OFF)
V± = ± 5 V
10
100
1000
10000
-250
-200
-150
-100
-50
0
50
100
0123456789101112
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
VD- Analog Voltage (V)
2nd line
I
D(OFF)
I
D(ON)
I
S(OFF)
V± = +12 V / 0 V
10
100
1000
10000
-200
0
200
400
600
800
1000
1200
1400
1600
1800
2000
-40-200 20406080100
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
I
D(OFF)
,V
D
= 4.5 V, V
S
= -4.5 V
I
D(ON)
,V
D
= 4.5 V
I
S(OFF)
,V
D
= -4.5 V, V
S
= 4.5 V
I
S(OFF)
,V
D
= 4.5 V, V
S
= -4.5 V
I
D(ON)
,V
D
= -4.5 V
I
D(OFF)
,V
D
= 1 V, V
S
= 4.5 V
V± = ± 5 V
10
100
1000
10 000
100 000
-40-200 20406080100
2nd line
I+ - Supply Current (pA)
Temperature (°C)
2nd line
V± = 12 V / 0 V
VEN = VA= 0 V
VEN = VA= 0 V
V± = ± 5 V
10
100
1000
10000
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100K 1M 10M 100M 1G
Axis Title
1st line
2nd line
2nd line
Loss, OIRR, XTALK (dB)
Frequency (Hz)
2nd line
OIRR
DG9408E
V± = 12 V / 0 V
Loss
XTALK
10
100
1000
10000
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100K 1M 10M 100M 1G
Axis Title
1st line
2nd line
2nd line
Loss, OIRR, XTALK (dB)
Frequency (Hz)
2nd line
OIRR
DG9409E
V± = 12 V / 0 V
Loss
XTALK
DG9408E, DG9409E
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S16-1452-Rev. A, 25-Jul-16 9Document Number: 75375
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Supply Current vs. Input Switching Frequency
Switching Time vs. Temperature
Transition Time vs. Temperature
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
Capacitance vs. Analog Voltage
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10 000
10 100 1000 10K 100K 1M 10M
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
Input Switching Frequency (Hz)
2nd line
V± = ± 5 V
10
100
1000
10000
0
25
50
75
100
125
150
175
200
225
250
-40-200 20406080100
Axis Title
1st line
2nd line
2nd line
tON(EN), tOFF(EN) - Switching Time (ns)
Temperature (°C)
2nd line
V+ = 3 V, t
ON
V+ = 12 V, t
ON
V+ = 3 V, t
OFF
V+ = 5 V, t
ON
V+ = 12 V, t
OFF
V+ = 5 V, t
OFF
10
100
1000
10000
0
25
50
75
100
125
150
175
200
225
250
-40-200 20406080100
Axis Title
1st line
2nd line
2nd line
tTRANS, - Transition Time (ns)
Temperature (°C)
2nd line
V+ = 3 V, t
TRANS+
V+ = 12 V, t
TRANS+
V+ = 3 V, t
TRANS-
V+ = 5 V, t
TRANS+
V+ = 12 V, t
TRANS-
V+ = 5 V, t
TRANS-
10
100
1000
10000
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2 3 4 5 6 7 8 9 10111213141516
Axis Title
1st line
2nd line
2nd line
VT- Switching Threshold (V)
V+ - Supply Voltage (V)
2nd line
VIH =-40 °C
VIL = 85 °C
VIH = 25 °C
VIL = 25 °C
10
100
1000
10000
-25
-20
-15
-10
-5
0
5
10
15
20
25
0123456789101112
Axis Title
1st line
2nd line
2nd line
QINJ - Charge Injection (pC)
VS- Analog Voltage (V)
2nd line
V+ = 12 V
DG9408E
DG9409E
10
100
1000
10000
0
20
40
60
80
100
120
140
160
180
200
0123456789101112
Axis Title
1st line
2nd line
2nd line
Capacitance (pF)
VANALOG (V)
2nd line
DG9408E
CS(OFF)
CD(ON)
CD(OFF)
DG9408E, DG9409E
www.vishay.com Vishay Siliconix
S16-1452-Rev. A, 25-Jul-16 10 Document Number: 75375
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Capacitance vs. Analog Voltage
SCHEMATIC DIAGRAM (Typical Channel)
Fig. 1 -
10
100
1000
10000
0
20
40
60
80
100
120
0123456789101112
Axis Title
1st line
2nd line
2nd line
Capacitance (pF)
VANALOG (V)
2nd line
DG9409E
CS(OFF)
CD(ON)
CD(OFF)
EN
A0
S1
D
V+
Sn
V-
Decode/
Drive
Level
Shift
V-
V+
AX
GND
V-
V-
V-
DG9408E, DG9409E
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Fig. 2 - Transition Time
Fig. 3 - Enable Switching Time
A1
A0
A2
A1
A0
V+
V-
V+
V-GND
D
35 pF
VO
S1
S2 - S 7
S8
50 Ω
300 Ω
VS8
VS1
V+
V-
V+
V-GND
35 pF
VO
S1b
S1a - S4a, Da
S4b
300 Ω
Db
Logic
Input
Switch
Output
VS8
VO
tTRANS
tr < 5 ns
tf < 5 ns
S8 ON (DG9408)
or
S4 ON (DG9409)
S1ON
tTRANS
50 %
VS1
50 %
90 %
90 %
3 V
0 V
DG9408E
DG9409E VS4b
VS1b
VAX
50 Ω
EN
EN Return to Specifications:
Single Supply 12 V
Dual Supply V+ = 5 V, V- = - 5 V
Single Supply 5 V
Single Supply 3 V
Logic
Input
Switch
Output
VO
tr < 5 ns
tf < 5 ns
3 V
0 V
0 V
tON(EN)
tOFF(EN)
50 %
90 %
90 %
VO
S1
S2 - S 8
A0
A1
A2
50 300
VO
V+
GND V- D
35 pF
V-
V+
S1b
S1a - S 4a, Da
S2b - S4b
Db
A0
A1
50 300
VO
V+
GND V-
35 pF
V-
DG9408E
DG9409E
VS1
V+
VS1
EN
EN
Return to Specifications:
Single Supply 12 V
Dual Supply V+ = 5 V, V- = - 5 V
Single Supply 5 V
Single Supply 3 V
DG9408E, DG9409E
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S16-1452-Rev. A, 25-Jul-16 12 Document Number: 75375
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Fig. 4 - Break-Before-Make Interval
Fig. 5 - Charge Injection
Fig. 6 - Off Isolation
50 %
90 %
Logic
Input
Switch
Output
VO
VS
tOPEN
tr < 5 ns
tf < 5 ns
0 V
3 V
0 V
V+
GND V-
35 pF
V-
A2Db, D
All S and Da
300
VO
50
A1
A0DG9408E
DG9409E
VS1
EN
Return to Specifications:
Single Supply 12 V
Dual Supply V+ = 5 V, V- = - 5 V
Single Supply 5 V
Single Supply 3 V
A0
A1
A2
VO
V+
GND V-
D
Vg
Rg
SX
CL
1 nF
Channel
Select
3 V
0 V
OFF ON
Logic
Input
Switch
Output
ΔVO
ΔVO is the measured voltage due to charge transfer
error Q, when the channel turns off.
Q = CL x ΔV
O
OFF
V+
V-
EN
RL
50 Ω
VOU
V+
GND V-
A2
D
A1
A0
S8
SX
Rg = 50 Ω
Off Isolation = 20 log
VOUT
VIN
VIN
V+
V-
EN
DG9408E, DG9409E
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S16-1452-Rev. A, 25-Jul-16 13 Document Number: 75375
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Fig. 7 - Crosstalk
Fig. 8 - Insertion Loss
Fig. 9 - Source Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75375.
RL
50 Ω
VOUT
V+
GND V-
A2
D
A1
A0
S8
SX
Rg = 50 Ω
Crosstalk = 20 log
VOUT
VIN
VIN
S1
V+
V-
EN
RIN
50 Ω
RL
50 Ω
A2
VOUT
D
Rg = 50 Ω
Insertion Loss = 20 log
VOUT
A1
VIN
A0
VIN S1
V+
GND V-
V-
V+
EN
f = 1 MHz
S1
D
GND
V+
V-
Meter
HP4192A
Impedance
Analyzer
or Equivalent
S8
A1
A2
A0
Channel
Select
V-
V+
EN
Package Information
www.vishay.com Vishay Siliconix
Revision: 22-Apr-13 1Document Number: 71921
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
QFN 4x4-16L Case Outline
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
VARIATION 1 VARIATION 2
DIM MILLIMETERS(1) INCHES MILLIMETERS(1) INCHES
MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.75 0.85 0.95 0.029 0.033 0.037 0.75 0.85 0.95 0.029 0.033 0.037
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
A3 0.20 ref. 0.008 ref. 0.20 ref. 0.008 ref.
b 0.25 0.30 0.35 0.010 0.012 0.014 0.25 0.30 0.35 0.010 0.012 0.014
D 4.00 BSC 0.157 BSC 4.00 BSC 0.157 BSC
D2 2.0 2.1 2.2 0.079 0.083 0.087 2.5 2.6 2.7 0.098 0.102 0.106
e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
E 4.00 BSC 0.157 BSC 4.00 BSC 0.157 BSC
E2 2.0 2.1 2.2 0.079 0.083 0.087 2.5 2.6 2.7 0.098 0.102 0.106
K 0.20 min. 0.008 min. 0.20 min. 0.008 min.
L 0.5 0.6 0.7 0.020 0.024 0.028 0.3 0.4 0.5 0.012 0.016 0.020
N(3) 16 16 16 16
Nd(3) 4444
Ne(3) 4444
ECN: S13-0893-Rev. B, 22-Apr-13
DWG: 5890
(4)
(5)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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