GaAs IRED & PHOTO-TRANSISTOR TLP627,-2,-4 {TLP627} Unit in mm PROGRAMMABLE CONTROLLERS. DC - OUTPUT MODULE. TELECOMMUNICATION. The TOSHIBA TLP627, arsenide infreared emitting diode optically coupled to a ~2, and -4 consist of a gallium darlington connected phototransistor which has an TLP627 8 : . 4 _ Weight : 0.26g * 3 ions cr } 2 4582025 2624025, en es an a integral base-emitter resistor to optimize switching a +0) speed and elevated temperature characteristics. RGA tars [x82 ~e0o| The TLP627-2 offers two isolated channels in a eight lead plastic DIP package, while the TLP627-4 provide |JEDEC _ four isolated channels per package. EIAJ _- TOSHIBA 11-5B1 Collector-Emitter Voltage : 300V(Min.) TLP627-2 Weight : 0.54g Current Transfer Ratio 1000% (Min.) Isoration Voltage 5000Vrms (Min.) UL Recognized UL1577, File No. E67349 oo. _ae02s _ 7.824025 a is, we 9 tL PIN CONFIGURATIONS (TOP VIEW) 5 | i O25 - Cs TLP627 TLP627-2 TLP627-4 258129) 785 TBO Iq 4 1 JEDEC _ Fut 2 v H3 2 EIAJ _ 1 ANODE TOSHIBA 11-10C1 2 : CATHODE 3 . 9 TLP627-4 3: EMITTER s ea Weight: l.ig 4 . COLLECTOR 3 4 S 1, 3; ANODE ees 2,4:CATHODE 5 sen 10d Sl 621025 5, 7: EMITTER i on ey 6, 8 : COLLECTOR 6 . =| } } pe +0] . 25-0 7 & 2.85 ~880 ail 8 JEDEC 1, 3,5,7 : ANODE 2,4,6,8 : CATHODE EIAJ = 9,11,13,15 : EMITTER 10, 12,14,16 : COLLECTOR TOSHIBA 11-20A1 466 (TLP627) MAXIMUM RWTINGS (Ta = 25C) TLP627, -2, -4 RATING CHARACTORISTIC SYMBOL rLp627 TLP627-2 UNIT TLP627-4 Forward Current Ip 60 50 mA Forward Current Darating Alp/C -0.7 (Ta 39C) | -0.5 (Ta 25C) | mA/C Pulse Forward Current Ipp 1(100zs pulse, LOOpps) A a Power Dissipation (1 Circuit) Pp 100 70 mW we + . . Power Dissipation Derating . 3 1. 0, (Ta2 25C, 1 Circuit) app /C 07 mw /"C Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 300 v pe | Emitter-Collector Voltage VECO 0.3 Vv 2 Collector Current Ic 150 mA oO rr a Collector Power Dissipation Po 150 (*300) 100 mW px | (1 Circuit) (| Collector Power Dissipation Derating . A4Pq/* -1.5(*-3. -1. W /C | (ra=25C, 1 Circuit) che C85) m Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~150 C Operating Temperature Range Topr 55~100 C Lead Soldering Temperature Tsold 260 (10sec) C Total Package Power Dissipation P 200 (*320 150 WwW (1 Circuit) T ( ) m Total Package Power Dissipation Derating APy/ 2.0(*-3.2 -15 Ww /C (Ta 25C, 1 Cireuit) Tie ( 8.2) m Isolation Voltage BVs 5000 (AC, 1min., R.H.= 60%) Vrms * Ip=20mA Max 467 TLP627, -2, -4 (TLP627) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT q | Forward Voltage VF Ip=10mA 1.0 1.15 1.3 Vv 8 Reverse Current IR VR=5V 10 HA Capacitance Cp V=0, f=1MHz = 30} pF Collector-Emitter Vv Ic =0.1lmA 3 _ _ me | Breakdown Voltage (BR)CEO | I=0.1m 00 Vv oO : Emitter-Collector B 7 n= Q. . | Breakdown Voltage V(BR)ECO | TE =0.1mA 0.3 Vv me VCE=200V ~_ 10 | 200 A & | Collector Dark Current ICEO CE = fa Vce=200V,Ta=85C | 20 | pA Capacitance Collector = =1MH _ to Emitter CCE V=0f 7 10 pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Current Transfer Ratio Ic /Ip Ip=1mA, VoR=1V 1000 | 4000 | % Saturated CTR Ic /IF(sat) | Ip-=10mA, VoR=1V 500 | _ Collector-Emitter v Ic =10mA, Ip=imA _ _ 1.0 Saturation Voltage CE(sat) Ic =100mA, Ip=10mA 03] 1.2 ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Capacitance Input to Output Cs Vg=0, f=1MHz 0.8 pF Isolation Resistance Rg Vg=500V R.H.S 60% 5x10!9 | 10!4 _ a: AC, 1 minute 5000 _ _ Vv . rms Isolation Voltage BVS AC, 1 second, in oil _|10000] DC, 1 minute, in oil 10000; Vde 468 TLP627, -2,-4 (TLP627) SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERICTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.} UNIT Rise Time tr Voo=10V _ 40 _ Fall Time te _ 15 _ = s Turn-on Time ton Ic=10mA | 5 | |] * Turn-off Time toff Rp = 1000 _ 15 _ Turn-on Time ton RL=1800 (Fig.1) 5 _ Strage Time ts _ 40 _ us Voc=10V, Ip=16mA Tuen-off Time tOFF 80 _ RECOMMENDED OPERATING CONDITIONS CHARACTERICTIC SYMBOL MIN. | TYP. | MAX. | UNIT Supply Voltage Vcc _ _ 200 Vv Forward Current IF _ 16 25 | mA Collector Current Ic _ 120 | mA Operating Temperature Topr 25 85 C Fig.1 SWITCHING TIME TEST CIRCUIT ee" Ta 6 Hf tL 7 VCE VCE gv VCC + ton |tOFF 469 TLP627, -2,-4 (TLP627) (mA) ALLOWABLE FORWARD CURRENT. Ir (mA) Ipp PULSE FORWARD CURRENT (mV /C) FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa TLP627 TLP627-2, -4: 20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) Irp Dr PULSE WIDTH s 10Gzs Ta = 25C 107 3 1g 3 1g 3 DUTY CYCLE RATIO Da AVE? /ATa Ip 0.3 1 3 16 30 FORWARD CURRENT fp (mA) 120 470 (mW) Pc ALLOWABLE COLLECTOR POWER DISSIPATION (mA) IF FORWARD CURRENT (mA) Ipp PULSE FORWARD CURRENT Pc - Ta TLP627 (p= 20mA Max.) -20 TLPG27 TLP627 2, -4 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) lp Ve Ta=25C seer yd ite 1 0.4 0.8 1.0 1.2 14 FORWARD VOLTAGE Vp (V) ljep Vep PULSE WIDTHS 10g8 REPETITIVE FREQUENCY = 100liz Ta =25C 0.8 1.2 16 2.0 PULSE FORWARD VOLTAGE Vep 24 iv) 120 28TLP627, -2, -4 (TLP627) Ta =25C < < 2 &s & & a & a4 eS 3 5 oO oO 5 5 & B 8 3 3 o _ o Q Oo Ip=0.5mA 7 Ta=25C 0.6 0.8 1.0 1.2 14 1.6 18 0.2 0.5 1 3 5 10 30 650 COLLECTOR-EMITTER VOLTAGE Voge () a FORWARD CURRENT Ip (mA) SWITCHING TIME Ry, Ic/Ip Ip Ta=25C Voc=loVv & - aay . torr Uip=16mA) D1 4 2 2 tOFF Up = 1L.6mA) g = oe & x VCEFL2V 3 Fy CE . z - G = ton (p= L.6mA) a 6 a1 Bp = ~ & % z Q a a i] ton Up=16mA) OQ 1 30 100 300 1k ak 10k 03 O05 i 3 5 10 305 LOAD RESISTANCE Ry, (2) FORWARD CURRNT Ip (mA) 471 TLP627, -2, -4 (TLP627) Ip - Vor Ip - Ta Ta = 85C 1 10 < < a bs ama ~ 10 2 wQ es) 2 2 fo & z z wz ee & z 5 2 5 So 1907 xs 4 Z : A 6 g 5 2 3 107? 9 5 5 3 107% - - 9 50 100 300-800 0 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE VoK () AMBIENT TEMPARETURE Ta (C) Ic - Ta Ic Ta < Ip=10mA q ~ Ip=10mA 2 2 & & z zZ & az 5 5 5 5 5 8 & E 5 o tw f ot od a _ 5 8 oO Q =20 0 20 40 60 80 100 20 0 20 40 60 80 100 AMBIENT TEMPARETURE Ta (C) AMBIENT TEMPARETURE Ta (CC) 472