PUTs 2N6027-2N6028 Planar, TO-92, Plastic FEATURES DESCRIPTION 70-92 Plastic Package The Unitrode Programmable Unijunction Transistor is todays preferred device for low @ Maximum Peak Current: 150nA cost timing circuits, oscillators, sensing circuits and a wide range of other applications Minimum Valley Current: 1.5mA where a variable voltage level threshold is desired. Functionally equivalent to standard Peak Forward Current: 5A unijunction transistors, the Unitrode PUT offers the distinct advantage of versatile pro- Programmable Eta, R,,, |, and ly gramming. External resistors can be added to meet the designers needs in program- Planar Passivated Construction for Maximum ming the Eta, Rp, Ip, and I, functions. For additional information see Unitrode Reliability and Parameter Uniformity Application Note U-66. TYPICAL FEATURES TYPICAL APPLICATIONS Programmable Turn-on SCR Triggers Delay Circuits Programmable Turn-off Timing Circuits Sampling Circuits Low Leakage Current Oscillators Relay Drivers High Output Pulse Sweep Circuits Smoke Detectors ABSOLUTE MAXIMUM RATINGS Anode-to-Cathode Voltage, V,, Gate-to-Cathode Forward Voltage, Ve, ... Gate-to-Anode Reverse Voltage, Vear . Gate-to-Cathode Reverse Voltage, Veg ccc . Peak Recurrent Forward Current 20us, 1% Duty Cycle 100us, 1% Duty Cycle . Peak Non-recurrent Forward Current, 10us ........ Power Dissipation 25C Ambient Derating Factor .. Storage Temperature 0. Operating Temperature Range . 55C to +125C 55C to +100C MECHANICAL SPECIFICATIONS a 2N6027-2N6028 TO-92 "a (Lu) 547 mas UNITRODEELECTRICAL SPECIFICATIONS {at 25C unless noted) 2N6027-2N6028 2N6027 2N6028 Test Symbol Fig. Min Max, Min y Max, Units Test Conditions 2 ~ 0.15 nA Re == 1MD, V, = 10V Peak Current Ip 1 _~ 5 - 10 aA Re = 10k2, V; = 10V = 50 3 ZA Re = 1M, V, = 10V Valley Current ly 1 70 _ 2 _ uA Rs = 10kQ, V, = 10V 15 _ 10 _ mA Re = 2002, V, = 10V 6.2 0.6 0.2 0.6 Vv Re = 10k2, Vs == 10V Offset Voltage Vy i 0.2 16 02 0.6 V Rg = 1MQ, V, = 10V 10 ~ 10 nA T = 25C, V, = 40V Gate-to-Anode Leakage Isao 2 _ 100 _ 100 nA T = 75C, Ve 40V Gate-to-Cathode Leakage loxs 3 _ 100 _ 100 nA V, = 40V Forward Voltage Ve 4 - 15 _- 15 v I; = 50mA Pulse Output Voltage Vo 5 6 _ 6 ~ v Pulse Output Rise Time t. 5 _ 80 _ 80 ns e NEGATIVE RESISTANCE ', 7 REGION SWITCH === ly POINT =D VALLEY Vy Vp CURRENT V,=V~ -V, \, PEAK POINT Vv CURRENT A a) Typical Circuit b) Equivalent Test Circuit VALLEY VoLTaGe PEAK VOLTAGE Figure 1 Los hi. oe Vero | = Vs V, Ye Figure 2 Figure 3 Figure 4 Note: Conditions for oscillation Vea O Vo R 16k2 Vas Ve > |p R Vv 6V _ i Vea VW <\ c 202 27k R It 6V EE : +t Figure UNITRODE CORPORATION - 5 FORBES ROAD LEXINGTON, MA 02173 + TEL. (617) 861-6540 TWX (710) 326-6509 TELEX 95-1064 548 PRINTEO IN U.S.A.2N6027-2N6028 Peak Point Current Valley Current vs. Gate Current vs. Gate Source Resistance 1000 < 3 5 = << Fs 3 5 & 100 & 5 & = 2 o oO a > x uu < al kd a a = 10 f = / 1 100 1K 10K 100K 1M .001 01 a ty 10 R, ~ GATE SOURCE RESISTANCE (9) lg GATE CURRENT = ze (MA) S Offset Voltage Peak Point Current vs. Ambient Temperature vs. Ambient Temperature 3.0 10 Vv, = n = .63 2.5 = a 4 = bt R, = 1K w z G = o 2.0 wool s ~ 2N6027 = 5 g [e)Spec Max. Rg = 1M 9 p 15 Ke wy z a 2N6028 is > {e)Spec Max. Re = 1M | = - }2N6027, sk! _ 1M . Reg = jSpec Min. | i ol 50, 25, 0. 25 50 75. 100 125 50 = 25 9 25 50 75 100125 T, AMBIENT TEMPERATURE (C) T, AMBIENT TEMPERATURE (C) UNITRODE CORPORATION + 5 FORBES ROAD LEXINGTON, MA 02173 + TEL. (617) 861-6540 TWX (710) 326-6509 + TELEX 95-1064 549 PRINTED IN U.S.A.2N6027-2N6028 Valley Current Forward Current vs. Ambient Temperature vs. Forward Voltage q z 3 Spec Min. ~ & 100 ai ui x id 5 > o > 2 wy < 2 = 10 = 2 > | 1 =50 ~25 0 25 50 75 100 125 6 38 1 12 14 16 18 2 T, AMBIENT TEMPERATURE (C) V, FORWARD VOLTAGE (V) Typical Pulse Output vs. Circuit Supply Voltage Vo typ. TYPICAL PULSE OUTPUT VOLTAGE (V) o 64 8 12 16 20 24 28 32 36 40 V CIRCUIT SUPPLY VOLTAGE (V) UNITRODE CORPORATION 5 FORBES ROAD LEXINGTON, MA 02173 TEL. (617) 861-6540 TWX (710) 326-6509 + TELEX 95-1064 550 PRINTED IN U.S.A.