icon Controlled Rectifier series SOC SI Dim. Inches Millimeter P Minimum Maximum Minimum Maximum Notes A 1 B 1.050 1.060 26.67 26.92 C --- 1.161 --- 29.49 D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F 797 .827 20.24 21.01 G .276 .286 701 7.26 H --- .948 --- 24.08 J .425 .499 10.80 12.67 2 K .260 .280 6.60 7.11 Dia. M 500 .600 12.70 15.24 N 140 150 3.56 3.81 P --- .295 --- 7.49 R --- .900 --- 22.86 Dia. : S .225 275 6.48 6.99 GF = T --- 1.750 --- 44.45 A = U .370 380 9.40 9.65 TO-208AD i TO-209AC V 213 223 5.41 5.66 Dia. X 215 .225 5.46 5.72 Note 1: 1/2-20 UNF3A Y .290 15 7.37 8.00 Note 2: Full thread within 2 1/2 threads Z 514 930 13.06 13.46 Note 3: For insulated cathode lead, AA .089 .099 2.26 2.51 add suffix IL to catalog number Microsemi Forward & Reverse Reverse Transient e High dv/dt-200 V/usec. Catalog Number Repetitive Blocking Blocking 1200 Amperes surge current Standard Lead Flag Lead Low forward on-state voltage 55C60B 55C60BF 600 700 e ; ; _ S8CB0B SSCBOBF 800 900 Fackage conforming to either TO209AC or 55C100B 55C100BF 1000 1100 or ical f h trol 55C120B 55C120BF 1200 1300 coolications or genera! purpose phase contre To specify dv/dt higher than 200V/usec., contact factory. PP Electrical Characteristics Max. RMS on-state current IT(RMS) 86 Amps Tc = 70C Max. average on-state cur. IT(AV) 55 Amps Tc = 70C Max. peak on-state voltage V 1.6 Volts ITM = 220 A(peak) Max. holding current IH 200 mA Max. peak one cycle surge current ITSM 1200 A Tc = 70C, 60Hz Max. I2t capability for fusing 12+ 6000A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range TJ 65C to 125C Storage temperature range TSTG 65C to 150C Maximum thermal resistance Reuc 0.32C/W Junction to case Typical thermal resistance (greased) Recs 0.20C/W Case to sink Mounting torque 100-130 inch pounds Weight 55C-B Approx. 3.6 ounces (102.0 grams) typical 55CBF Approx. 3.24 ounces (91.8 grams) typical COLORADO 800 Hoyt Street a = Broomfield, CO. 80020 9-8-00 Rev. 1 jcrosemi 72% FAX: (303) 466-3775 www.microsemi.comDOC Switching Critical rate of rise of on-state current (note 1) di/dt 100A /usec. Ty = 125C Typical delay time (note 1) t 3.0 usec. 3 Typical circuit commuted turnoff time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VET 3.0V Ty = 25C Max. nontriggering gate voltage Ve 0.25V TW = 125C Max. gate current to trigger | GT 100mA Ty = 25C Max. peak gate power PGM 15W Average gate power PG(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4.0A Max. peak gate voltage (forward) Vem 20V Max. peak gate voltage (reverse) Vem 10V Blocking Max. leakage current IDRM 10mA TY =125C &V DRM Max. reverse leakage IRRM 10mA Wy =125C &V RRM Critical rate of rise of off-state voltage dv/dt 200V /usec. Ty =125C 9-8-00 Rev. 1Figure 1 Typical Forward OnState Characteristics 1 8000 6000 4000 1000 800 600 400 200 100 80 60 40 Instantaneous OnState Current Amperes DOC 20 10 8 1.2 16 20 24 28 32 3.46 Instantaneous OnState Voltage Volts Figure 2 Forward Current Derating 130 oD 5 120 2 wo = 110 KX 5 LAN S90 NK AA 2 VV IW S \ = 80 \ E \ E 70 = 60 30] 60 | | 90%) [120] 180 0 10 20 30 40 50 60 70 80 90 100 Average OnState Current Amperes Figure 3 Maximum Power Dissipation 2 140 3 + /* = 120 120 y 9 S 100 WL oS 604 / B 80 / YY 3 60 WN > o WZ e | WY 20 x oO = 0 0 10 20 30 40 50 60 70 80 90 100 Average On-State Current Amperes Figure 4 Transient Thermal Impedance 39 3 25 2 5 Jj .05 Thermal Impedance C/Watts Junction to Case Figure 0 .001 .01 Time in Seconds 5 0.1 1.0 Maximum Nonrepetitive Surge Current 1300 1200 100 1100 1000 900 800 700 Peak OnState Current Amperes 600 1 Number of Cycles 10 9-8-00 Rev. 1 100