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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBF4117 / MMBF4118 / MMBF4119 N-Channel Switch Description G This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from process 53. S SOT-23 D Note: Source & Drain are interchangeable Ordering Information Part Number Top Mark Package Packing Method MMBF4117 61A SOT-23 3L Tape and Reel MMBF4118 61C SOT-23 3L Tape and Reel MMBF4119 61E SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA -55 to +150 C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com MMBF4117 / MMBF4118 / MMBF4119 -- N-Channel Switch February 2015 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit Total Device Dissipation 225 mW Derate Above 25C 1.8 mW/C Thermal Resistance, Junction-to-Ambient 556 C/W Note: 3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 A, VDS = 0 IGSS VGS(off) Gate Reverse Current Gate-Source Cut-Off Voltage -40 VGS = -20 V, VDS = 0 VGS = -20 V, VDS = 0, TA = 150C V -10 pA -25 nA MMBF4117 -0.6 -1.8 VDS = -10 V, ID = 1.0 nA MMBF4118 -1.0 -3.0 MMBF4119 -2.0 -6.0 MMBF4117 30 90 MMBF4118 80 240 MMBF4119 200 600 MMBF4117 70 210 MMBF4118 80 250 MMBF4119 100 330 V On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 10 V, VGS = 0 A Small Signal Characteristics gfs Common-Source Forward Transconductance VDS = 10 V, VGS = 0, f = 1.0 kHz MMBF4117 goss Re(yfs) Common-Source Output Conductance Common-Source Forward Transconductance VDS = 10 V, VGS = 0, f = 1.0 kHz VDS = 10 V, VGS = 0, f = 30 MHz mhos 3.0 MMBF4118 5.0 MMBF4119 10.0 MMBF4117 60 MMBF4118 70 MMBF4119 90 mhos mhos Ciss Input Capacitance VDS = 10 V, VGS = 0, f = 1.0 kHz 3.0 pF Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0, f = 1.0 MHz 1.5 pF Note: 4. Pulse test: pulse width 300 s, duty cycle 1.0% (c) 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 2 MMBF4117 / MMBF4118 / MMBF4119 -- N-Channel Switch Thermal Characteristics(3) Figure 1. Parameter Interactions Figure 2. Transfer Characteristics Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics (c) 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 3 MMBF4117 / MMBF4118 / MMBF4119 -- N-Channel Switch Typical Performance Characteristics Figure 7. Leakage Current vs. Voltage Figure 8. Common Drain-Source Figure 9. Output Conductance vs. Drain Current Figure 10. Conductance vs. Voltage Figure 11. Transconductance vs. Drain Current Figure 12. Noise Voltage vs. Frequency (c) 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 4 MMBF4117 / MMBF4118 / MMBF4119 -- N-Channel Switch Typical Performance Characteristics (Continued) MMBF4117 / MMBF4118 / MMBF4119 -- N-Channel Switch Physical Dimensions 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 13. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (c) 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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