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tm
QSE158, QSE159 - Plastic Silicon OPTOLOGIC® Photosensor
February 2016
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE158, QSE159 Rev. 1.5
QSE158, QSE159
Plastic Silicon OPTOLOGIC® Photosensor
Features
■Bipolar silicon IC
■Package type: Sidelooker
■Medium wide reception angle, 50°
■Package material and color: black epoxy
■Matched emitter: QEE113/QEE123
■Daylight filter
■High sensitivity
■Direct TTL/LSTTL interface
Description
The QSE15X family are OPTOLOGIC® ICs which
feature a Schmitt trigger at output which provides hyster-
esis for noise immunity and pulse shaping. The basic
building block of this IC consists of a photodiode, a linear
amplifier, voltage regulator, Schmitt trigger and four out-
put options. The TTL/LSTTL compatible output can drive
up to ten TTL loads over supply currents from 4.5 to 16.0
Volts. The devices are marked with a color stripe for
easy identification.
Package Dimensions
4.39
4.49
2.49
2.59
2.49
2.59
0.63
0.89
0.32
NOM
0.51 SQ. NOM
GND VccVout
2.17
2.27
5.03
5.13
2.54
3.56
3.76
3.86
12.7
MIN
ø2.41
ø1.65
1.9 NOM 2X
Note:
1. Dimensions for all drawings are in millimeters.
Part Number Definitions Color Code
QSE158 Open-collector, buffer output Green
QSE159Open-collector, inverter output Blue
Input/Output Table
Part Number Light Output
QSE158 On HIGH
Off LOW
QSE159 On LOW
Off HIGH
QSE158, QSE159 - Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE158, QSE159 Rev. 1.52
Block Diagrams
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 2.50mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16" (1.6mm) minimum from housing.
Symbol Parameter Rating Unit
TOPR
Operating Temperature -40 to +85 °C
TSTG
Storage Temperature -40 to +100 °C
TSOL-I
Soldering Temperature (Iron)(2,3,4)
240 for 5 sec °C
TSOL-F
Soldering Temperature (Flow)(2,3)
260 for 10 sec °C
IO
Output Current 50 mA
VCC
Supply Voltage 4.0 to 16 V
VO
Output Voltage 35 V
PD
Power Dissipation(1)
100 mW
LA
REGULATOR
VOLTAGE
GND
V
OUT
V
CC
REGULATOR
VOLTAGE
LA
V
CC
V
OUT
GND
QSE158
Open-Collector Output Buffer
QSE159
Open-Collector Output Inverter
QSE158, QSE159 - Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE158, QSE159 Rev. 1.53
Electrical Characteristics (TA = -40°C to +85°C, VCC = 4.5V to 16V)
Note:
5. λ = 880nm (AlGaAs).
Symbol Parameter Test Conditions Min. Typ. Max. Units
Ee(+)
Positive Going Threshold
Irradiance(5)
TA = 25°C 0.025 0.250
mW/cm2
Ee(+)/Ee(-) Hysteresis Ratio 1.10 2.00
ICC
Supply Current(5)
Ee = 0 or 0.3mW/cm2
5.0 mA
Peak to Peak Ripple which
will Cause False Triggering
f = DC to 50MHz 2.00 V
QSE158 (Buffer Open Collector)
IOH
High Level Output Current(5)
Ee = 0.3mW/cm2, VOH = 30V 100 µA
VOL
Low Level Output Voltage
Ee = 0, IOL = 16mA 0.40 V
QSE159 (Inverter Open Collector)
IOH
High Level Output Current
Ee = 0, VOH = 30V 100 µA
VOL
Low Level Output Voltage(5)
Ee = 0.3mW/cm2, IOL = 16mA 0.40 V
QSE158, QSE159
tR, tF
Output Rise, Fall Times
Ee = 0 or 0.3mW/cm2,
f = 10kHz, DC = 50%,
RL = 360Ω(5)
100 nS
tPHL, tPLH
Propagation Delay 6.0 µS
QSE158, QSE159 - Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE158, QSE159 Rev. 1.54
Typical Performance Curves (Sensor Coupled to QEE113 Emitter)
Fig. 4 Normalized Threshold Current vs. Supply Voltage
VCC - Supply Voltage (V)
0 2 4 6 8 10 12 14 16
IF - Normalized Threshold Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Normalized to:
Turn ON Threshold
VCC = 5 V
TA = 25°C
IF (ON)
IF (OFF)
Fig. 1 Output Voltage vs. Input Current (Inverters)
IF - Input Current (mA) IF - Input Current (mA)
0 1 2 3 4 5
VO- Output Voltage (V)
VO- Output Voltage (V)
0
1
2
3
4
5
6
VOH
VOL
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
IF (ON)
IF (OFF)
Fig. 3 Threshold Current vs. Distance
d - Distance (mm)
0 2 4 6 8 10 12 14
IF(ON) - Normalized Threshold Current
10
8
6
4
2
1.0
0.8
0.6
0.4
0.2
0.1
Fig. 2 Output Voltage vs. Input Current (Buffers)
0 1 2 3 4 5
0
1
2
3
4
5
6
VOL
VOH
IF (OFF) IF (ON)
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
Normalized to:
VCC = 5 V
RL = 270Ω
TA = 25°C
d = 4mm
Pulsed 100Hz
PW = 100μs
QSE158, QSE159 - Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE158, QSE159 Rev. 1.55
Typical Performance Curves (Sensor Coupled to QEE113 Emitter) (Continued)
Fig. 6 Low Output Voltage vs. Output Current
IO - Output Current (mA)
1 1 0
V
OL
- Output Voltage, Low (V)
0.01
0.1
1
V
CC
= 5 V
T
A
= 25°C
I
F
= 10 mA
Fig. 7 Response Time vs. Forward Current
IF - Forward Current (mA)
0 5 10 15 20
Response Delay Time (μs)
0
1
2
3
4
5
T
PHL
T
PLH
V
CC
= 5 V
R
L
= 270Ω
T
A
= 25°C
I
F
Pulsed
T = 10 ms
Duty Cycle = 50%
Fig. 5 Normalized Threshold Current
vs. Ambient Temperature
TA - Ambient Temperature (
˚C)
-40 -20 0 20 40 60 80 100
I
F
- Normalized Threshold Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
F (ON)
I
F (OFF)
I
F (OFF)
I
F (ON)
Normalized to:
V
CC
= 5 V
T
A
= 25°C
QSE158, QSE159 - Plastic Silicon OPTOLOGIC® Photosensor
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE158, QSE159 Rev. 1.56
C2
R2
R1
1
C
.1 uf
bypass
5V
GND
Pulse
Generator
V = 5V
f = 10 KHz
d.c. = 50%
O
1
R = 360Ω
R = 180Ω
2
1
C = 15 pf
C = 20 pf
2stray wire capacitance
C and C include probe and
1 2
Fig. 8 Switching Speed Test Circuit
PLH
r
tPHL
t
50%
90% 10%
OH
V
OL
V10% 90%
50%
Output
VO
tf
t
0 mA
OH
PHL
0 mA
t
V
PLH
50%
t
10% 90%
90% 10%
r
t
f
t
Output
O
V
OL
V
Fig. 9 Switching Times Definition for Buffers Fig. 10 Switching Times Definition for Inverters
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