ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
= 1800
V
IT
(
AV
)
M= 6100 A
IT
(
RMS
)
= 9600 A
ITSM = 94×103A
V
(
T0
)
=0.9 V
rT=0.05 mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 50Q1800
Doc. No. 5SYA1070-01 Okt. 03
•
••
•Patented free-floating silicon technology
•
••
•Low on-state and switching losses
•
••
•Designed for traction, energy and industrial applications
•
••
•Optimum power handling capability
•
••
•Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions 5STP 50Q1800 -- --
VDRM, VRRM f = 50 Hz, tp = 10 ms 1800 V -- --
VRSM tp = 5 ms, single pulse 2000 V -- --
dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125°C 300 mA
Reverse leakage current IRRM VRRM, Tvj = 125°C 300 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM81 90 108 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 2.1 kg
Housing thickness H FM = 90 kN, Ta = 25 °C 25.5 26.5 mm
Surface creepage distance DS36 mm
Air strike distance Da15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STP 50Q1800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1070-01 Okt. 03 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70°C 6100 A
RMS on-state current IT(RMS) 9600 A
Peak non-repetitive surge
current
ITSM 94×103A
Limiting load integral I2t
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V
41.28×106A2s
Peak non-repetitive surge
current
ITSM 100×103A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
43.37×106A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VTIT = 3000 A, Tvj = 125 °C 1.04 V
Threshold voltage V(T0) 0.9 V
Slope resistance rT
IT = 4000 A - 18000 A, Tvj= 125 °C
0.05 mΩ
Holding current IHTvj = 25 °C 100 mA
Tvj = 125 °C 75 mA
Latching current ILTvj = 25 °C 500 mA
Tvj = 125 °C 350 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current
di/dtcrit Cont.
f = 50 Hz
250 A/µs
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 125 °C,
ITRM = 3000 A,
VD ≤ 0.67 VDRM,
IFG = 2 A, tr = 0.5 µs
Cont.
f = 1Hz
1000 A/µs
Circuit-commutated turn-off
time
tqTvj = 125°C, ITRM = 3000 A,
VR = 200 V, diT/dt = -20 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 20V/µs
500 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Qrr Tvj = 125°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -1.5 A/µs
3000 µAs
Gate turn-on delay time tgd VD = 0.4⋅VRM, IFG = 2 A,
tr = 0.5 µs, Tvj = 25 °C
3µs
5STP 50Q1800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1070-01 Okt. 03 page 3 of 6
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Average gate power loss PG(AV) see Fig. 9
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate-trigger voltage VGT Tvj = 25 °C 2.6 V
Gate-trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvj = 125 °C 0.3 V
Gate non-trigger current IGD VD = 0.4 x VDRM, Tvj = 125°C 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range
Tvj 125 °C
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case
Rth(j-c) Double-side cooled 5 K/kW
Rth(j-c)A Anode-side cooled 10 K/kW
Rth(j-c)C Cathode-side cooled 10 K/kW
Thermal resistance case to
heatsink
Rth(c-h) Double-side cooled 1 K/kW
Rth(c-h) Single-side cooled 2 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ic)-th(j i
å
=
τ
i1 234
Ri(K/kW) 3.359 0.936 0.481 0.224
τi(s) 0.4069 0.0854 0.0118 0.0030
Fig. 1 Transient thermal impedance junction-to case.
5STP 50Q1800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1070-01 Okt. 03 page 4 of 6
Max. on-state characteristic model:
VT25 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IT = 200 – 100000 A
Max. on-state characteristic model:
VT125 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IT = 200 – 100000 A
A25 B25 C25 D25 A125 B125 C125 D125
932.00×10-3 25.28×10-6 -14.74×10-3 3.72×10-3 334.70×10-3 29.36×10-6 61.20×10-3 2.31×10-3
Fig. 2 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 3 Max. on-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean
on-state current.
5STP 50Q1800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1070-01 Okt. 03 page 5 of 6
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
IGM
IGon
100 %
90 %
10 %
IGM ≈ 2..5 A
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr≤ 1 µs
tp(IGM)≈ 5...20 µs
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
5STP 50Q1800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1070-01 Okt. 03
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
C
C
Fig. 12 Device Outline Drawing.
