THIS PAGE INTENTIONALLY LEFT BLANK
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
1
HMC504LC4B
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
General Description
Features
Functional Diagram
Noise Figure: 2.2 dB @ 20 GHz
Gain: 19 dB
P1dB Output Power: +17 dBm
Supply Voltage: +4V @ 90mA
Output IP3: +26 dBm
50 Ohm matched Input/Output
24 Lead 4x4mm SMT Package: 16mm2
Electrical Specications, TA = +25 °C, Vdd = +4V, Idd = 90 mA[2]
Typical Applications
This HMC504LC4B is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC504LC4B is a GaAs MMIC Low Noise
Wideband Amplier housed in a leadless 4x4 mm cer-
amic surface mount package. The amplier operates
between 14 and 27 GHz, providing up to 19 dB of
small signal gain, 2.2 dB noise gure, and output IP3
of +26 dBm, while requiring only 90 mA from a +4V
supply. The P1dB output power of up to +17 dBm
enables the LNA to function as a LO driver for balan-
ced, I/Q or image reject mixers. The HMC504LC4B
also features I/Os that are DC blocked and internally
matched to 50 Ohms, making it ideal for high cap-
acity microwave radios or VSAT applications. This
versatile LNA is also available in die form as the HMC-
ALH476.
Parameter Min. Typ. Max. Min. Ty p. Max. Min. Ty p. Max. Units
Frequency Range 14 - 20 20 - 24 24 - 27 GHz
Gain [1] 16.5 19 16 18.5 14 17 dB
Gain Variation over Temperature 0.015 0.017 0.018 dB / °C
Noise Figure [1] 2.2 32.5 4.2 4.5 6dB
Input Return Loss 15 9 7 dB
Output Return Loss 15 12 9.5 dB
Output Power for 1 dB Compression [1] 15 16.5 17 dBm
Saturated Output Power (Psat) [1] 19.5 19.5 19 dBm
Output Third Order Intercept (IP3) 24.5 25.5 26 dBm
Supply Current (Idd)
(Vdd = 4V, Vgg = -0.3V Typ.) 90 90 90 mA
[1] Board loss subtracted out for gain, power and noise gure measurement
[2] Adjust Vgg between -1 to 0.3V to achieve Idd = 90mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
2
HMC504LC4B
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Gain vs. Temperature [1]
Output Return Loss vs. Temperature
Broadband Gain & Return Loss [1]
Input Return Loss vs. Temperature
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
[1] Board loss subtracted out for gain, power and noise gure measurement
-25
-15
-5
5
15
25
10 12 14 16 18 20 22 24 26 28 30 32
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
13 15 17 19 21 23 25 27 29
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
13 15 17 19 21 23 25 27
+25C
+85C
- 40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
13 15 17 19 21 23 25 27 29
+25C
+85C
- 40C
IP3 (dBm)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
13 15 17 19 21 23 25 27 29
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
13 15 17 19 21 23 25 27 29
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
3
HMC504LC4B
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Psat vs. Temperature [1]
Power Compression @ 21 GHz [1]
P1dB vs. Temperature [1]
Reverse Isolation vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 21 GHz [1]
[1] Board loss subtracted out for gain, power and noise gure measurement
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
3.5 4 4.5
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (V)
-4
0
4
8
12
16
20
-20 -15 -10 -5 0 5
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-60
-50
-40
-30
-20
-10
0
13 15 17 19 21 23 25 27 29
+25C
+85C
- 40C
ISOLATION (dB)
FREQUENCY (GHz)
4
8
12
16
20
24
13 15 17 19 21 23 25 27 29
+25C
+85C
- 40C
Psat (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
13 15 17 19 21 23 25 27 29
+25C
+85C
- 40C
P1dB (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
4
HMC504LC4B
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Drain Bias Voltage +4.5V
RF Input Power +6 dBm
Gate Bias Voltage -1 to 0.3V
Channel Temperature 180 °C
Continuous Pdiss (T = 85 °C)
(derate 20 mW/°C above 85 °C) 1.9 W
Thermal Resistance
(Channel to die bottom) 50 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [2]
HMC504LC4B Alumina, White Gold over Nickel MSL3 [1] H504
XXXX
[1] Max peak reow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
5
HMC504LC4B
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Pin Number Function Description Interface Schematic
1 - 3, 5 - 8, 11 - 16,
18, 19, 24 GND Package bottom has exposed metal paddle
that must be connected to RF/DC ground.
4RFIN This pad is AC coupled and matched to
50 Ohms.
17 RFOUT This pad is AC coupled and matched to
50 Ohms.
20 Vgg
Gate control for amplier. Please follow “MMIC Amplier Bias-
ing Procedure” application note. See assembly for required
external components.
21 Vdd Power Supply Voltage for the amplier. See assembly for
required external components.
Pin Descriptions
Application Circuit
Component Value
C1, C2 100 pF
C3, C4 10,000 pF
C5, C6 4.7 µF
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
6
HMC504LC4B
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Item Description
J1, J2 2.92mm PCB mount K-Connector
J3 - J6 DC Pin
C1, C2 100 pF Capacitor, 0402 Pkg.
C3, C4 10,000pF Capacitor, 0603 Pkg.
C5, C6 4.7 µF Capacitor, Tantalum
U1 HMC504LC4B Amplier
PCB [2] 122787 Evaluation PCB [3]
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
[3] Due to the very high frequency operation of this
product a custom LC4B PCB footprint and solder stencil
are required for this design. Performance shown in this data
sheet was produced using this custom footprint. DO NOT
USE Hittite’s standard LC4B footprint. Please contact
Applications for details.
List of Materials for Evaluation PCB 122789 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
Evaluation PCB
