ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
9/6/97 DB92521-AAS/A1
OPTION G
7.62
0.26
0.5
Dimensions in mm
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
10.2
9.5
2.54
0.26
7.62
6.62
1.2
0.6 1.4
0.9
0.5
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll
ll
lVDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
lCertified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
DESCRIPTION
The IS201-63 optically coupled isolator
consists of an infrared light emitting diode and
a NPN silicon photo transistor in a standard 6
pin dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh BVCEO (70V min)
lHigh Isolation Voltage (3.75kVRMS)
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lDC motor controllers
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
OPTICALL Y COUPLED
ISOLATOR
PHOTOTRANSIST OR OUTPUT
1
34
6
25
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 70V
Collector-base Voltage BVCBO 70V
Emitter-collector Voltage BVECO 6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
IS201-63
IS201X63
DB92521-AAS/A1
PARAMETER MI N TY P MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.65 V IF = 60mA
Reverse Voltage (VR)6VI
R
= 10µA
Reverse Current (IR)10µAV
R
= 6V
Output Collector-emitter Breakdown (BVCEO)70 V I
C
= 1mA
( note 2 )
Collector-base Breakdown (BVCBO)70 V I
C
= 100µA
Emitter-collector Breakdown (BVECO) 6 V I
E
= 100µA
Collector-emitter Dark Current (ICEO)50nAV
CE = 10V
Coupled Current Transfer Ratio (CTR) 75 % 10mA IF , 10V VCE
10 % 1mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0. 4 V 10mA IF , 2mA IC
Input to Output Isolation Voltage VISO 3750 VRMS See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Turn-on Time ton 3.0 µsV
CE = 5V ,
Turn-off Time toff 5 µsI
F
= 2mA, RL = 75Ω
( FIG 1)
9/6/97
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Output
Output
RL = 75Ω
Input
10%
90% 90%
10%
ton
tr
FIG 1
VCC
toff
tf
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92521-AAS/A1
9/6/97
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
For ward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 10mA
IC = 2mA
Forward current IF (mA)
Ambient temperature TA ( °C )
0
0.5
1.0
1.5 IF = 1mA
VCE = 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
Ambient temperature TA ( °C )
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
