BC846 Semiconductor NPN Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=55V * Complementary pair with BC856 Ordering Information Type NO. Marking BC846 Package Code QA SOT-23 : hFE rank Outline Dimensions unit : mm 2.40.1 1.300.1 1.90 Typ. 2.90.1 1 3 0.4 Typ. 2 -0.03 +0.05 KST-2006-000 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. PIN Connections 1. Base 2. Emitter 3. Collector 1 BC846 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 80 V Collector-Emitter voltage VCEO 55 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 Base-Emitter turn on voltage VBE(ON) VCE=5V, IC=2mA Base-Emitter saturation voltage VBE(sat) Collector-Emitter saturation voltage VCE(sat) - - V 550 - 700 mV IC=100mA, IB=5mA - 900 - mV IC=100mA, IB=5mA - - 600 mV - - 15 nA 110 - 800 - VCE=5V, IC=10mA - 150 - MHz Cob VCB=10V, IE=0, f=1MHz - - 4.5 pF NF VCE=5V, IC=200A, f=1KHz, Rg=2K - - 10 dB ICBO VCB=35V, IE=0 DC current gain hFE* VCE=5V, IC=2mA Collector output capacitance Noise figure Unit 55 Collector cut-off current Transition frequency Min. Typ. Max. fT * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2006-000 2 BC846 Electrical Characteristic Curves Fig. 1 PC -Ta Fig. 3 IC -VCE Fig. 2 IC -VBE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-2006-000 3