IXTN170P10P PolarPTM Power MOSFET VDSS ID25 RDS(on) = = -100V -170A 12m P-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -100 V VDGR TJ = 25C to 150C, RGS = 1M -100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C -170 A IDM TC = 25C, Pulse Width Limited by TJM - 510 A IA EAS TC = 25C TC = 25C -170 3.5 A J dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S G S D G = Gate S = Source D = Drain Either Source Terminal at miniBLOC can be used as Main or Kelvin Source. Features z z z z z z International Standard Package Rugged PolarPTM Process High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V 100 IDSS VDS = VDSS, VGS= 0V - 50 A - 250 A RDS(on) VGS = -10V, ID = 0.5 * ID25, Note 1 z V - 4.0 V Applications z z TJ = 125C (c) 2009 IXYS CORPORATION, All Rights Reserved nA Easy to Mount Space Savings High Power Density z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 12 m DS99975A(03/09) IXTN170P10P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 * ID25, Note 1 35 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 58 S 12.6 nF 4190 pF 930 pF 32 ns 75 ns 82 ns 45 ns 240 nC 45 nC 120 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0 .5 * ID25 RG = 1 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd SOT-227B (IXTN) Outline (M4 screws (4x) supplied) 0.14 C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Min. Characteristic Values Typ. Max. -170 A Repetitive, Pulse Width Limited by TJM - 680 A IF = - 85A, VGS = 0V, Note 1 - 3.3 V IF = - 85A, -di/dt = -100A/s VR = - 50V, VGS = 0V 176 ns 1.25 C -14.2 A Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN170P10P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C -180 -300 VGS = -15V -10V - 9V -160 - 8V -210 -120 -100 ID - Amperes ID - Amperes - 9V -240 -140 - 7V -80 - 8V -180 -150 - 7V -120 - 6V -60 -90 - 6V -40 -60 - 5V -20 -30 0 - 5V 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. RDS(on) Normalized to ID = - 85A vs. Junction Temperature -180 -11 2.2 VGS = -15V -10V - 9V -160 VGS = -10V 2.0 -140 1.8 -120 RDS(on) - Normalized ID - Amperes VGS = -15V -10V -270 - 8V -100 - 7V -80 -60 - 6V -40 I D = -170A 1.6 1.4 I D = - 85A 1.2 1.0 0.8 -20 0.6 - 5V 0 0.4 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -50 -25 VDS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 85A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.0 -180 VGS = -10V -160 -15V - - - - 1.8 TJ = 125C 1.6 -120 ID - Amperes RDS(on) - Normalized -140 1.4 1.2 -100 -80 -60 TJ = 25C 1.0 -40 -20 0.8 0 0 -40 -80 -120 -160 ID - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved -200 -240 -280 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTN170P10P Fig. 8. Transconductance Fig. 7. Input Admittance 100 -160 -120 TJ = - 40C 90 TJ = - 40C 25C 125C -140 80 25C g f s - Siemens ID - Amperes 70 -100 -80 -60 60 125C 50 40 30 -40 20 -20 10 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -10 -270 -9 -240 -8 -210 -7 -180 -150 -120 TJ = 125C -140 -160 VDS = - 50V I D = - 85A I G = -1mA -6 -5 -4 -60 -2 -30 -1 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 20 40 VSD - Volts 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1,000 100,000 100s f = 1 MHz RDS(on) Limit 25s 1ms 10ms Ciss - 100 10,000 ID - Amperes Capacitance - PicoFarads -120 -3 TJ = 25C 0 -0.5 -100 Fig. 10. Gate Charge -300 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode -90 -80 ID - Amperes Coss DC, 100ms -10 1,000 TJ = 150C Crss TC = 25C Single Pulse -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts -1 - 10 - 100 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_170P10P(B9) 3-25-09-C IXTN170P10P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170P10P(B9) 3-25-09-C