VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620US thru 1N6625US
1N6620US – 1N6625US
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENE FITS
• Surface mount series equivalent to the JEDEC
registered 1N6620 to 1N6625 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
• Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6620US, SP6624US, etc.
• Axial-leaded equivalents also available (see separate
data sheet for 1N6620 thru 1N6625)
• Ultrafast recovery rectifier series 200 to 1000 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +150oC
• Storage Temperature: -65oC to +175oC
• Peak Forward Surge Current @ 25oC: 20 Amps (except
1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
• Average Rectified Forward Current (IO) at TEC=+110oC:
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 1.5%/oC for TEC > +110oC)
• Average Rectified Forward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where TJ(max) is not exceeded.)
• Thermal Resistance junction to endcap (RθJEC): 13oC/W
• Capacitance at VR= 10 V: 10 pF
• Solder temperature: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead plating.
• MARKING: Cathode band only
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-481-B
• Weight: 193 mg
• See package dimensions and recommended pad
layout on last page
Microsemi
Scottsdale Division
Page 1
Copyright © 2009
10-06-2009 REV E; SD52A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620US thru 1N6625US
1N6620US – 1N6625US
ELECTRICAL CHARACTERISTICS @ 25oC MAXIMUM
REVERSE
CURRENT IR @
VRWM
IR
TYPE
NUMBER MINIMUM
BREAK-
DOWN
VOLTAGE
VR
IR = 50μA
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
TA=25oC TA=150oC
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
trr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
Note 2
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2A,
100A/μs
Note 2
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5A
tfr =12ns
V V @ A V @ A V
μA μA ns ns A V
1N6620 220 1.40V @ 1.2A 1.60V @ 2.0A 200 0.5 150 30 45 3.5 12
1N6621 440 1.40V @ 1.2A 1.60V @ 2.0A 400 0.5 150 30 45 3.5 12
1N6622 660 1.40V @ 1.2A 1.60V @ 2.0A 600 0.5 150 30 45 3.5 12
1N6623 880 1.55V @ 1.0A 1.80V @ 1.5A 800 0.5 150 50 60 4.2 18
1N6624 990 1.55V @ 1.0A 1.80V @ 1.5A 900 0.5 150 50 60 4.2 18
1N6625 1100 1.75V @ 1.0A 1.95V @ 1.5A 1000 1.0 200 60 80 5.0 30
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1 FIGURE 2
Typical Forward Current Typical Forward Current
vs vs
Forward Voltage Forward Voltage
Microsemi
Scottsdale Division
Page 2
Copyright © 2009
10-06-2009 REV E; SD52A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620US thru 1N6625US
1N6620US – 1N6625US
IFSM - Forward Pulse Current – (A)
PR – Reverse Pulse Power – (W)
FIGURE 3 FIGURE 4
Typical Reverse Current vs. Typical Reverse Current vs.
Applied Reverse Voltage Applied Reverse Voltage
IFSM - Forward Pulse Current – (A)
PR – Reverse Pulse Power – (W)
Pulse Duration Pulse Duration
FIGURE 5 FIGURE 6
Forward Pulse Current vs. Reverse Pulse Power vs.
Pulse Duration Pulse Duration
Microsemi
Scottsdale Division
Page 3
Copyright © 2009
10-06-2009 REV E; SD52A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620US thru 1N6625US
1N6620US – 1N6625US
PACKAGE DIMENSIONS
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5A” INCHES mm
A 0.246 6.25
B 0.067 1.70
C 0.105 2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES mm
MIN MAX MIN MAX
BD .097 .103 2.46 2.62
BL .185 .200 4.70 5.08
ECT .019 .028 0.48 0.71
S .003 --- 0.08 ---
Copyright © 2009
10-06-2009 REV E; SD52A.pdf
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi:
1N6622US JANTXV1N6622US JANTX1N6622US JANTXV1N6624US JANTXV1N6621US JANTX1N6624US
JANTX1N6621US JANTX1N6623US JAN1N6620US JAN1N6622US 1N6624US JAN1N6624US
JANTXV1N6623US JANTX1N6625US JAN1N6623US JANTX1N6620US 1N6620US 1N6621US
JANTXV1N6625US JAN1N6625US JANTXV1N6620US 1N6623US JAN1N6621US 1N6625US 1N6621US/TR
