VTB Process Photodiodes VTB1012H, 1013H PACKAGE DIMENSIONS inch (mm) CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a "flat" window, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL CHARACTERISTIC VTB1012H TEST CONDITIONS Min. ISC TC ISC VOC TC VOC ID RSH 8 Typ. VTB1013H Max. 13 Min. 8 Typ. UNITS Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 490 490 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 G .12 13 .23 A .12 .23 100 20 %/C pA RSH Temperature Coefficient H = O, V = 10 mV -8.0 -8.0 %/C CJ Junction Capacitance H = 0, V = 0 .31 .31 nF SR Sensitivity 365 nm TC RSH range Spectral Application Range .09 320 .09 1100 320 A/W 1100 nm p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 35 35 Degrees NEP Noise Equivalent Power 3.0 x 10-14 (Typ.) 5.9 x 10-15 (Typ.) W Hz Specific Detectivity 4.2 x 10 12 (Typ.) 2.1 x 10 13 (Typ.) cm Hz / W D* 920 2 PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 40 2 Phone: 877-734-6786 Fax: 450-424-3413 24 920 nm 40 V www.perkinelmer.com/opto