IS34MW02G084/164
IS35MW02G084/164
2Gb SLC-4b ECC
1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND
INTERFACE
IS34/35MW02G084/164
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FEATURES
Flexible & Efficient Memory
Architecture
- Memory Cell: 1bit/Memory Cell
- Organization: 256Mb x8 /128Mb x16
- X8:
- Memory Cell Array: (256M + 8M) x 8bit
- Data Register: (2K + 64) x 8bit
- Page Size: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- X16:
- - Memory Cell Array: (128M + 4M) x 16bit
- - Data Register: (1K + 32) x 16bit
- - Page Size: (1K + 32) Byte
- - Block Erase: (64K + 2K) Byte
Highest performance
- Read Performance
- Random Read: 25us (Max.)
- Serial Access: 45ns (Max.)
- Write Performance
- Program time: 300us - typical
- Block Erase time: 3ms – typical
Low Power with Wide Temp. Ranges
- Single 1.8V (1.7V to 1.95V) Voltage
Supply
- 15 mA Active Read Current
- 10 µA Standby Current
- Temp Grades:
- Industrial: -40°C to +85°C
- Extended: -40°C to +105°C
- Automotive, A1: -40°C to +85°C
- Automotive, A2: -40°C to +105°C
Reliable CMOS Floating Gate
Technology
- ECC Requirement: X8 - 4bit/512Byte
X16 - 4bit/256Word
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
Efficient Read and Program modes
- Command/Address/Data Multiplexed I/O
Interface
- Command Register Operation
- Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
- NOP: 4 cycles
- Cache Program Operation for High
Performance Program
- Cache Read Operation
- Copy-Back Operation
- EDO mode
- OTP operation
- Two-Plane Operation
- Bad-Block-Protect
Advanced Security Protection
- Hardware Data Protection:
- Program/Erase Lockout during Power
Transitions
Industry Standard Pin-out & Packages
- T =48-pin TSOP (Type I) (1)
- B =63-ball VFBGA
Notes:
1. Call Factory for TSOP (Type I) x16
2Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC
IS34/35MW02G084/164
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GENERAL DESCRIPTION
The IS34/35MW2G084/164 are 256Mx8/128Mx16 bit with spare 8Mx8/4Mx16 bit capacity. The devices
are offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the
solid state mass storage market. The memory is divided into blocks that can be erased independently
so it is possible to preserve valid data while old data is erased.
The device contains 2,048 blocks, composed by 64 pages consisting in two NAND structures of 32
series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 300us
and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block (or 64K-
Word for x16 device block).
Data in the page mode can be read out at 45ns cycle time per Word. The I/O pins serve as the ports for
address and command inputs as well as data input/output.
The copy back function allows the optimization of defective blocks management: when a page program
operation fails, the data can be directly programmed in another page inside the same array section
without the time consuming serial data insertion phase.
The cache program feature allows the data insertion in the cache register while the data register is
copied into the Flash array.
This pipelined program operation improves the program throughput when long files are written inside
the memory. A cache read feature is also implemented. This feature allows to dramatically improving
the read throughput when consecutive pages have to be streamed out. This device includes extra
feature: Automatic Read at Power Up.
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TABLE OF CONTENTS
FEATURES ............................................................................................................................................................ 2
GENERAL DESCRIPTION .................................................................................................................................... 3
TABLE OF CONTENTS ......................................................................................................................................... 4
1. PIN CONFIGURATION ................................................................................................................................... 6
2. PIN DESCRIPTIONS ...................................................................................................................................... 9
3. BLOCK DIAGRAM ........................................................................................................................................ 10
4. OPERATION DESCRIPTION ....................................................................................................................... 14
5. ELECTRICAL CHARACTERISTICS ............................................................................................................. 16
5.1 ABSOLUTE MAXIMUM RATINGS (1) ..................................................................................................... 16
5.2 Recommended Operating Conditions .................................................................................................... 16
5.3 DC CHARACTERISTICs ........................................................................................................................ 17
5.4 Valid Block .............................................................................................................................................. 17
5.5 AC Measurement Condition .................................................................................................................... 18
5.6 AC PIN CAPACITANCE (TA = 25°C, VCC=1.8V, 1MHz) ...................................................................... 18
5.7 Mode Selection ....................................................................................................................................... 18
5.8 ROGRAM/ERASE PERFORMANCne .................................................................................................... 19
5.9 AC CHARACTERISTICS for address/ command/data input .................................................................. 19
5.10 AC CHARACTERISTICS for Operation ................................................................................................ 20
6. TIMING DIAGRAMS ..................................................................................................................................... 21
6.1 Command Latch Cycle ........................................................................................................................... 21
6.2 Address Latch Cycle ............................................................................................................................... 21
6.3 Input Data Latch Cycle ........................................................................................................................... 22
6.4 Serial Access Cycle after Read (CLE=L, WE#=H, ALE=L) .................................................................... 22
6.5 Serial Access Cycle after Read (EDO Type CLE=L, WE#=H, ALE=L) .................................................. 23
6.6 Status Read Cycle .................................................................................................................................. 23
6.7 Read Operation (One PAGE) ................................................................................................................. 24
6.8 Read Operation (Intercepted by CE#) .................................................................................................... 24
6.9 Random Data Output In a Page ............................................................................................................. 25
6.10 Page program Operation ...................................................................................................................... 25
6.11 Page Program Operation with Random Data Input .............................................................................. 26
6.12 Copy-Back Operation with Random Data InpuT .................................................................................. 26
6.13 Cache Program Operation .................................................................................................................... 27
6.14 Block Erase Operation .......................................................................................................................... 27
6.15 Cache Read Operation ......................................................................................................................... 28
6.16 Read ID Operation ................................................................................................................................ 29
6.17 TWo-plane Page Read Operation with Two-Plane Random Data Out ................................................ 30
6.18 two-plane Cache Read Operation ........................................................................................................ 31
6.19 Two-plane Program Operation ............................................................................................................. 33
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6.20 two-plane Cache Program Operation ................................................................................................... 34
6.21 READ Two Plane Block Erase Operation ............................................................................................. 35
7. ID Definition Table ........................................................................................................................................ 36
8. DEVICE OPERATION .................................................................................................................................. 38
8.1 Page READ OPERATION ...................................................................................................................... 38
8.2 Page Program ......................................................................................................................................... 40
8.3 Cache Program ....................................................................................................................................... 41
8.4 Copy-Back Program................................................................................................................................ 42
8.5 Block Erase ............................................................................................................................................. 43
8.6 Read Status ............................................................................................................................................ 43
8.7 Read ID ................................................................................................................................................... 45
8.8 Reset ....................................................................................................................................................... 46
8.9 Cache Read ............................................................................................................................................ 47
8.10 Two-Plane Page Read .......................................................................................................................... 48
8.11 Two-Plane Cache Read ........................................................................................................................ 49
8.12 Two-Plane Page Program .................................................................................................................... 50
8.13 Two-Plane Copy Back Program ........................................................................................................... 51
8.14 Two-Plane Cache Program .................................................................................................................. 54
8.15 Two-Plane Block Erase ........................................................................................................................ 55
8.16 Ready/Busy# ......................................................................................................................................... 56
8.17 Data Protection and Power Up Sequence ............................................................................................ 57
8.18 Write Protect Operation ........................................................................................................................ 58
9. INVALID BLOCK AND ERROR MANAGEMENT ......................................................................................... 60
9.1 Mask Out Initial Invalid Block(s) ........................................................................................................... 60
9.2 Identifying Initial Invalid Block(s) and Block Replacement Management ............................................... 60
9.3 ERRor in Read or Write operation .......................................................................................................... 62
9.4 Addressing for PROGRAM operation ..................................................................................................... 67
9.5 System Interface Using CE# NOT Care operation ................................................................................. 68
10. PACKAGE TYPE INFORMATION ........................................................................................................... 69
10.1 48-Pin TSOP (TYPE I) Package (T) ..................................................................................................... 69
10.2 63-BALL VFBGA Package (B) .............................................................................................................. 70
11. ORDERING INFORMATION – Valid Part Numbers ................................................................................ 71
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1. PIN CONFIGURATION
48-pin TSOP (Type I)
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63-ball VFBGA (x8)
ALE VSS CE#
NC RE# CLE NC
NC NC NC NC
NC NC NC NC
NC VCC NC NC
WE#
NC
NC
VSS
Balls Down, Top View
NC
C4 C5 C6
D3 D4 D5 D6
E3 E4 E5 E6
F3 F4 F5 F6
G3 G4 G5 G6
C7
D7
E7
F7
G7
R/B#
NC
NC
NC
NC
C8
D8
E8
F8
G8
NC I/O0 NC NC
NC I/O1 NC VCC
VSS I/O2 I/O3 I/O4
NC
I/O5
I/O6
H3 H4 H5 H6
J3 J4 J5 J6
K3 K4 K5 K6
H7
J7
K7
VCC
I/O7
VSS
H8
J8
K8
NC
NC
A9
B9
NC
NC
A
10
B
10
WP#
C3
NC
NC
A2
B1
NC
A1
NC
NC
L9
M9
NC
NC
L
10
M
10
NC NC
L1 L2
NC NC
M1 M2
(1)
(1)
Note:
1. These pins might not be bonded in the package; however it is recommended to connect these pins to the designated
external sources for ONFI compatibility.
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63-ball VFBGA (x16)
ALE VSS CE#
VCC RE# CLE NC
NC NC NC NC
NC NC NC NC
NC VCC NC I/O13
WE#
NC
NC
VSS
I/O15
C4 C5 C6
D3 D4 D5 D6
E3 E4 E5 E6
F3 F4 F5 F6
G3 G4 G5 G6
C7
D7
E7
F7
G7
R/B#
NC
NC
NC
NC
C8
D8
E8
F8
G8
I/O8 I/O0 I/O10 I/O12
I/O9 I/O1 I/O11 VCC
VSS I/O2 I/O3 I/O4
I/O14
I/O5
I/O6
H3 H4 H5 H6
J3 J4 J5 J6
K3 K4 K5 K6
H7
J7
K7
VCC
I/O7
VSS
H8
J8
K8
NC
NC
A9
B9
NC
NC
A
10
B
10
WP#
C3
NC
NC
A2
B1
NC
A1
NC
NC
L9
M9
NC
NC
L
10
M
10
NC NC
L1 L2
NC NC
M1 M2
Balls Down, Top View
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2. PIN DESCRIPTIONS
Pin Name
Pin Function
I/O0 ~ I/O7 (X8)
I/O0 ~ I/O15 (X16)
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data
during read operations. The I/O pins float to high-z when the chip is deselected or
when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the internal
command registers. Commands are latched into the command register through the
I/O ports on the rising edge of the WE# signal with CLE high.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for addresses sent to the internal
address registers. Addresses are latched into the address register through the I/O
ports on the rising edge of WE# with ALE high.
CE#
CHIP ENABLE
The CE# input is the device selection control. When the device is in the Busy state,
CE# high is ignored, and the device does not return to standby mode in program or
erase operation. Regarding CE# control during read operation, refer to ’Page read’
section of Device operation.
RE#
READ ENABLE
The RE# input is the serial data-out control, and when it is active low, it drives the
data onto the I/O bus. Data is valid tREA after the falling edge of RE# which also
increments the internal column address counter by one.
WE#
WRITE ENABLE
The WE# input controls writes to the I/O ports. Commands, address and data are
latched on the rising edge of the WE# pulse.
WP#
WRITE PROTECT
The WP# pin provides inadvertent write/erase protection during power transitions.
The internal high voltage generator is reset when the WP# pin is active low.
R/B#
READY/BUSY OUTPUT
The R/B# output indicates the status of the device operation. When low, it indicates
that a program, erase or random read operation is in progress and returns to high
state upon completion. It is an open drain output and does not float to high-z
condition when the chip is deselected or when outputs are disabled.
VCC
POWER
VCC is the power supply for device.
VSS
GROUND
N.C.
NO CONNECTION
Lead is not internally connected.
Note: Connect all VCC and VSS pins of each device to common power supply outputs. Do not leave VCC or VSS disconnected.
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3. BLOCK DIAGRAM
Figure 3.1 Functional Block Diagram(x8)
Figure 3.2 Array Organization(x8)
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Table 3.1 ARRAY Address (x8)
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Address
1st cycle
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd cycle
A8
A9
A10
A11
*L
*L
*L
*L
Column Address
3rd cycle
A12
A13
A14
A15
A16
A17
A18
A19
Row Address
4th cycle
A20
A21
A22
A23
A24
A25
A26
A27
Row Address
5th cycle
A28
*L
*L
*L
*L
*L
*L
*L
Row Address
Notes:
1. Column Address: Starting Address of the Register.
2. *L must be set to “Low”.
3. The device ignores any additional input of address cycles than required.
4. A18 is for Plane Address setting.
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Figure 3.3 Functional Block Diagram(x16)
Figure 3.4 Array Organization(x8)
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Table 3.2 ARRAY Address (x16)
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Address
1st cycle
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd cycle
A8
A9
A10
*L
*L
*L
*L
*L
Column Address
3rd cycle
A11
A12
A13
A14
A15
A16
A17
A18
Row Address
4th cycle
A19
A20
A21
A22
A23
A24
A25
A26
Row Address
5th cycle
A27
*L
*L
*L
*L
*L
*L
*L
Row Address
Notes:
1. Column Address: Starting Address of the Register.
2. *L must be set to “Low”.
3. The device ignores any additional input of address cycles than required.
4. A17 is for Plane Address setting.
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4. OPERATION DESCRIPTION
The IS34/35MW02G084/164 are 2Gbit memory organized as 128K rows (pages) by 2,112x8 columns.
Spare 64x8 columns are located from column address of 2,048~2,111. A 2,112-byte data register is
connected to memory cell arrays accommodating data transfer between the I/O buffers and memory
during page read and page program operations. The program and read operations are executed on a
page basis, while the erase operation is executed on a block basis. The memory array consists of 2,048
separately erasable 128K-byte blocks. It indicates that the bit-by-bit erase operation is prohibited on the
device.
The device has addresses multiplexed into 8 or 16 I/Os. This scheme dramatically reduces pin counts
and allows system upgrades to future densities by maintaining consistency in system board design.
Command, address and data are all written through I/O's by bringing WE# to low while CE# is low. Those
are latched on the rising edge of WE#. Command Latch Enable (CLE) and Address Latch Enable (ALE)
are used to multiplex command and address respectively, via the I/O pins. Some commands require one
bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some
other commands, like page read and block erase and page program, require two cycles: one cycle for
setup and the other cycle for execution.
In addition to the enhanced architecture and interface, the device incorporates copy-back program
feature from one page to another page without need for transporting the data to and from the external
buffer memory.
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Table 4.1 Command Set
Function
1st Cycle
2nd Cycle
Acceptable Command during
Busy
Read
00h
30h
Read for Copy-Back
00h
35h
Read ID
90h
-
Reset
FFh
-
O
Page Program
80h
10h
Copy-Back Program
85h
10h
Block Erase
60h
D0h
Random Data Input (1)
85h
-
Random Data Output (1)
05h
E0h
Read Status
70h
-
O
Read Status 2
F1h
-
O
Two-Plane Read(3)
60h-60h
30h
Two-Plane Read for Copy-Back
60h-60h
35h
Two-Plane Random Data Output(1) (3)
00h-05h
E0h
Two-Plane Page Program(2)
80h-11h
81h-10h
Two-Plane Copy-Back Program(2)
85h-11h
81h-10h
Two-Plane Block Erase
60h-60h
D0h
Cache Program
80h
15h
Cache Read
31h
-
Read Start For Last Page Cache Read
3Fh
-
Two-Plane Cache Read(3)
60h-60h
33h
Two-Plane Cache Program(2)
80h-11h
81h-15h
Notes:
1. Random Data Input/Output can be executed in a page.
2. Any command between 11h and 80h/81h/85h is prohibited except 70h/F1h and FFh.
3. Two-Plane Random Data Output must be used after Two-Plane Read operation or Two-Plane Cache Read operation.
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5. ELECTRICAL CHARACTERISTICS
5.1 ABSOLUTE MAXIMUM RATINGS (1)
Storage Temperature
-65°C to +150°C
Surface Mount Lead Soldering Temperature
Standard Package
240°C 3 Seconds
Lead-free Package
260°C 3 Seconds
Input Voltage with Respect to Ground on All Pins
-0.6V to +4.6V
All I/O Voltage with Respect to Ground
-0.6V to VCC + 0.3V( < 4.6V)
VCC
-0.6V to +4.6V
Short Circuit Current
5mA
Electrostatic Discharge Voltage (Human Body Model)(2)
-2000V to +2000V
Notes:
1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. ANSI/ESDA/JEDEC JS-001
5.2 RECOMMENDED OPERATING CONDITIONS
Part Number
IS34/35MW02G084/164
Operating Temperature (Industrial Grade)
-40°C to 85°C
Operating Temperature (Extended Grade)
-40°C to 105°C
Operating Temperature (Automotive Grade A1)
-40°C to 85°C
Operating Temperature (Automotive Grade A2)
-40°C to 105°C
VCC Power Supply
1.7V (VMIN) – 1.95V (VMAX); 1.8V (Typ)
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5.3 DC CHARACTERISTICS
(Under operating range)
Parameter
Symbol
Test Conditions
Min
Typ.
Max
Unit
Operating
Current
Page Read
with Serial Access
ICC1
tRC=tRCMin,
CE#=VIL, IOUT=0mA
-
15
30
mA
Program
ICC2
-
-
15
Erase
ICC3
-
-
15
Stand-by Current (TTL)
ISB1
CE#=VIH, WP#=0V/VCC
-
-
1
Stand-by Current (CMOS)
ISB2
CE#=VCC-0.2,
WP#=0V/VCC
-
10
50
uA
Input Leakage Current
ILI
VIN=0 to Vcc (max)
-
-
+/-10
Output Leakage Current
ILO
VOUT=0 to Vcc (max)
-
-
+/-10
Input High Voltage
VIH (1)
0.8xVCC
-
Vcc+0.3
V
Input Low Voltage, All inputs
VIL (1)
-0.3
-
0.2xVCC
Output High Voltage Level
VOH
IOH=-100 uA
VCC-0.1
-
-
Output Low Voltage Level
VOL
IOL=+100 uA
-
-
0.1
Output Low Current (R/B#)
IOL
(R/B#)
VOL=0.2V
3
4
-
mA
Notes:
1. VIL can undershoot to -0.4V and VIH can overshoot to VCC + 0.4V for durations of 20 ns or less.
2. Typical value are measured at Vcc=1.8V, TA=25℃. Not 100% tested.
5.4 VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
IS34/35MW02G084/164
NVB
2,008
-
2,048
Block
Notes:
1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used.
The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks
that contain one or more bad bits which cause status failure during program and erase operation. Do not erase or program
factory-marked bad blocks. Refer to the attached technical notes for appropriate management of initial invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment and is
guaranteed to be a valid block up to 1K program/erase cycles with 4bit/512Byte ECC.
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5.5 AC MEASUREMENT CONDITION
Symbol
Parameter
Min
Max
Units
CL
Output Load
1 TTL GATE and CL = 50pF
pF
TR,TF
Input Rise and Fall Times
5
ns
VIN
Input Pulse Voltages
0V to VCC
V
VREFI
Input Timing Reference Voltages
0.5VCC
V
VREFO
Output Timing Reference Voltages
0.5VCC
V
Note:
1. Refer to 8.16 Ready/Busy#, R/B#’s Busy to Ready time is decided by pull up register (Rp) tied to R/B# pin.
5.6 AC PIN CAPACITANCE (TA = 25°C, VCC=1.8V, 1MHZ)
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
CIN
Input Capacitance
VIN = 0V
-
-
10
pF
CI/O
Input /Output Capacitance
VI/O = 0V
-
-
10
pF
Note:
1. These parameters are characterized and not 100% tested.
5.7 MODE SELECTION
CLE
ALE
CE#
WE#
RE#
WP#
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input (5 clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input (5 clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read (Busy)
X
X
X
X
X
H
During Program (Busy)
X
X
X
X
X
H
During Erase (Busy)
X
X(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/VCC(2)
Stand-by
Notes :
1. X can be VIL or VIH.
2. WP# should be biased to CMOS high or CMOS low for standby.
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5.8 ROGRAM/ERASE PERFORMANCNE
(Industriall: TA=-40 to 85℃,Automotive, A1: TA=-40 to 85℃, Vcc=1.7V ~ 1.95V)
Parameter
Symbol
Min
Typ
Max
Unit
Average Program Time
tPROG
-
300
750
us
Dummy Busy Time for Cache Operation
tCBSY
-
3
700
us
Number of Partial Program Cycles in the Same Page
Nop
-
-
4
cycle
Block Erase Time
tBERS
-
3
10
ms
Dummy Busy Time for Two-Plane Page Program
tDBSY
-
0.5
1
us
Notes:
1. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 1.8V Vcc
and 25℃ temperature.
2. tPROG is the average program time of all pages. Users should be noted that the program time variation from
page to page is possible.
3. tCBSY max.time depends on timing between internal program completion and data-in.
5.9 AC CHARACTERISTICS FOR ADDRESS/ COMMAND/DATA INPUT
Parameter
Symbol
Min
Max
Unit
CLE Setup Time
tCLS(1)
25
-
ns
CLE Hold Time
tCLH
10
-
ns
CE# Setup Time
tCS(1)
35
-
ns
CE# Hold Time
tCH
10
-
ns
WE# Pulse Width
tWP
25
-
ns
ALE Setup Time
tALS(1)
25
-
ns
ALE Hold Time
tALH
10
-
ns
Data Setup Time
tDS(1)
20
-
ns
Data Hold Time
tDH
10
-
ns
Write Cycle Time
tWC
45
-
ns
WE# High Hold Time
tWH
15
-
ns
Address to Data Loading Time
tADL(2)
100(2)
-
ns
Note:
1. The transition of the corresponding control pins must occur only once while WE# is held low.
2. tADL is the time from the WE rising edge of final address cycle to the WE# rising edge of first data cycle.
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5.10 AC CHARACTERISTICS FOR OPERATION
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
tR
-
25
us
ALE to RE# Delay
tAR
10
-
ns
CLE to RE# Delay
tCLR
10
-
ns
Ready to RE# Low
tRR
20
-
ns
RE# Pulse Width
tRP
25
-
ns
WE# High to Busy
tWB
-
100
ns
WP# Low to WE# Low (disable mode)
tWW
100
-
ns
WP# High to WE# Low (enable mode)
Read Cycle Time
tRC
45
-
ns
RE# Access Time
tREA
-
30
ns
CE# Access Time
tCEA
-
45
ns
RE# High to Output Hi-Z
tRHZ
-
100
ns
CE# High to Output Hi-Z
tCHZ
-
30
ns
CE# High to ALE or CLE Don’t care
tCSD
0
ns
RE# High to Output Hold
tRHOH
15
-
ns
RE# Low to Output Hold
tRLOH
5
ns
CE# High to Output Hold
tCOH
15
-
ns
RE# High Hold Time
tREH
15
-
ns
Output Hi-Z to RE# Low
tIR
0
-
ns
RE# High to WE# Low
tRHW
100
-
ns
WE# High to RE# Low
tWHR
60
-
ns
Device
Resetting
Time
during…
Read
tRST
-
5
us
Program
-
10
us
Erase
-
500
us
Ready
-
5 (1)
us
Cache Busy in Read Cache
(following 31h and 3Fh)
tDCBSYR
-
30
us
Note: If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
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6. TIMING DIAGRAMS
6.1 COMMAND LATCH CYCLE
Figure 6.1 Command Latch Cycle
6.2 ADDRESS LATCH CYCLE
Figure 6.2 Address Latch Cycle
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6.3 INPUT DATA LATCH CYCLE
Figure 6.3 Input Data Latch Cycle
6.4 SERIAL ACCESS CYCLE AFTER READ (CLE=L, WE#=H, ALE=L)
Note:
1. Dout transition is measured at ±200mV from steady state voltage at I/O with load.
2. tRHOH starts to be valid when frequency is lower than 33MHz.
Figure 6.4 Serial Access Cycle after Read
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6.5 SERIAL ACCESS CYCLE AFTER READ (EDO TYPE CLE=L, WE#=H, ALE=L)
Note:
1. Transition is measured at +/-200mV from steady state voltage with load.
This parameter is sample and not 100% tested. (tCHZ, tRHZ)
2. tRLOH is valid when frequency is higher than 33MHZ.
tRHOH starts to be valid
Figure 6.5 Serial Access Cycle after Read (EDO Type CLE=L, WE#=H, ALE=L)
6.6 STATUS READ CYCLE
Figure 6.6 Status Read Cycle
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6.7 READ OPERATION (ONE PAGE)
Figure 6.7 Read Operation (One Page)
6.8 READ OPERATION (INTERCEPTED BY CE#)
Figure 6.8 Read Operation (Intercepted by CE#)
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6.9 RANDOM DATA OUTPUT IN A PAGE
Figure 6.9 Random Data Output in a Page
6.10 PAGE PROGRAM OPERATION
Figure 6.10 Page Program Operation
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6.11 PAGE PROGRAM OPERATION WITH RANDOM DATA INPUT
Note: tADL is the time from the WE# rising edge of final address cycle to the WE# rising edge of the first data cycle.
Figure 6.11 Page Program Operation with Random Data Input
6.12 COPY-BACK OPERATION WITH RANDOM DATA INPUT
Figure 6.12 Copy-Back Operation with Random Data Input
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6.13 CACHE PROGRAM OPERATION
Figure 6.13 Cache Program Operation
6.14 BLOCK ERASE OPERATION
Figure 6.14. Block Erase Operation
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6.15 CACHE READ OPERATION
Figure 6.15.Cache Read Operation
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6.16 READ ID OPERATION
Figure 6.16 Read ID Operation
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6.17 TWO-PLANE PAGE READ OPERATION WITH TWO-PLANE RANDOM DATA OUT
Figure 6.17 Two Plane Page Read Operation with Two-Plane Random Data Out
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6.18 TWO-PLANE CACHE READ OPERATION
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Notes:
1. The column address will be reset to 0 by the 3Fh command input.
2. Cache Read operation is available only within a block.
3. Make sure to terminate the operation with 3Fh command. If the operation is terminated by 31h command, monitor I/O6
(Ready/Busy) by issuing Status Read Command (70h) and make sure the previous page read operation is completed. If
the page read operation is completed, issue FFh reset before next operation.
Figure 6.18 Two-Plane Cache Read Operation
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6.19 TWO-PLANE PROGRAM OPERATION
Figure 6.19 Two-Plane Program Operation
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6.20 TWO-PLANE CACHE PROGRAM OPERATION
Figure 6.20 Two-Plane Cache Program Operation
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6.21 READ TWO PLANE BLOCK ERASE OPERATION
Figure 6.21 Two-Plane Block Erase Operation
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7. ID Definition Table
90 ID: Access command = 90H
Part No.
1st Cycle
(Maker Code)
2nd Cycle
(Device Code)
3rd Cycle
4th Cycle
5th Cycle
6th ~ 8th Cycle
IS34/35MW02G084
(X8)
C8h
AAh
90h
15h
44h
7Fh
IS34/35MW02G164
(X16)
C8h
BAh
90h
55h
44h
7Fh
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
5th Byte
6th Byte
7th Byte
8th Byte
Maker Code
Device Code
Internal Chip Number, Cell Type, etc
Page Size, Block Size, etc
Plane Number, Plane Size, ECC Level
JEDEC Maker Code Continuation Code, 7Fh
JEDEC Maker Code Continuation Code, 7Fh
JEDEC Maker Code Continuation Code, 7Fh
3rd ID Data
Item
Description
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Internal Chip Number
1
2
4
8
0
0
1
1
0
1
0
1
Cell Type
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
0
0
1
1
0
1
0
1
Number of
Simultaneously
Programmed Pages
1
2
4
8
0
0
1
1
0
1
0
1
Interleave Program
Between Multiple Chips
Not Support
Support
0
1
Cache Program
Not Support
Support
0
1
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4th ID Data
Item
Description
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Page Size
(w/o redundant area)
1KB
2KB
4KB
8KB
0
0
1
1
0
1
0
1
Redundant Area Size
(Byte/512Byte)
8
16
0
1
Block Size
(w/o redundant area)
64KB
128KB
256KB
512KB
0
0
1
1
0
1
0
1
Organization
X8
X16
0
1
Serial Access Time
45ns
Reserved
25ns
Reserved
0
0
1
1
0
1
0
1
5th ID Data
Item
Description
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
ECC Level
4bit/512B
2bit/512B
1bit/512B
Reserved
0
0
1
1
0
1
0
1
Plane Number
1
2
4
8
0
0
1
1
0
1
0
1
Plane Size(without Redundant
Area)
64Kb
128Kb
256Kb
512Kb
1Gb
2Gb
4Gb
8Gb
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved
Reserved
0
6th ~ 8th ID Data
Item
Description
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
JEDEC Maker Code Continuation
Code
7F
0
1
1
1
1
1
1
1
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8. DEVICE OPERATION
8.1 PAGE READ OPERATION
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h
command, five-cycle address, and 30h command. After initial power up, the 00h command can be skipped because
it has been latched in the command register. The 2,112Byte of data on a page are transferred to cache registers
via data registers within 25us (tR). Host controller can detect the completion of this data transfer by checking the
R/B# output. Once data in the selected page have been loaded into cache registers, each Byte can be read out in
45ns cycle time by continuously pulsing RE#. The repetitive high-to-low transitions of RE# clock signal make the
device output data starting from the designated column address to the last column address.
The device can output data at a random column address instead of sequential column address by using the
Random Data Output command. Random Data Output command can be executed multiple times in a page.
After power up, device is in read mode so 00h command cycle is not necessary to start a read operation.
A page read sequence is illustrated in Figure below, where column address, page address are placed in between
commands 00h and 30h. After tR read time, the R/B# de-asserts to ready state. Read Status command (70h) can
be issued right after 30h. Host controller can toggle RE# to access data starting with the designated column address
and their successive bytes.
ALE
WE#
CE#
CLE
RE#
R/B#
I/Ox 00h
tR
Data Output( Serial Access)Address (5cycles) 30h
Data Field
Spare Field
(00h Command)
Col. Add. 1,2 & Row Add. 1,2,3
Read Operation
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RE#
R/B#
I/Ox 00h 30h
tR
Data Output( Serial Access)Address 5 cycles
Data Field
Spare Field
RE#
R/B#
I/Ox 05h Data Output( Serial Access)Col.1 Col.2 E0h
Data Field
Spare Field
1
1
Col. Add. 1,2 & Row Add. 1,2,3
Col. Add. 1,2
Random Page Operation
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8.2 PAGE PROGRAM
The device is programmed based on the unit of a page, and consecutive partial page programming on one page
without intervening erase operation is strictly prohibited. Addressing of page program operations within a block
should be in sequential order. A complete page program cycle consists of a serial data input cycle in which up to
2,112byteof data can be loaded into data register via cache register, followed by a programming period during
which the loaded data are programmed into the designated memory cells.
The serial data input cycle begins with the Serial Data Input command (80h), followed by a five-cycle address
input and then serial data loading. The bytes not to be programmed on the page do not need to be loaded. The
column address for the next data can be changed to the address follows Random Data Input command (85h).
Random Data Input command may be repeated multiple times in a page. The Page Program Confirm command
(10h) starts the programming process. Writing 10h alone without entering data will not initiate the programming
process. The internal write engine automatically executes the corresponding algorithm and controls timing for
programming and verification, thereby freeing the host controller for other tasks. Once the program process starts,
the host controller can detect the completion of a program cycle by monitoring the R/B# output or reading the Status
bit (I/O6) using the Read Status command. Only Read Status and Reset commands are valid during programming.
When the Page Program operation is completed, the host controller can check the Status bit (I/O0) to see if the
Page Program operation is successfully done. The command register remains the Read Status mode unless
another valid command is written to it.
A page program sequence is illustrated in Figure below, where column address, page address, and data input
are placed in between 80h and 10h. After tPROG program time, the R/B# de-asserts to ready state. Read Status
command (70h) can be issued right after 10h.
R/B#
I/Ox 80h Address & Data Input 10h 70h I/O0
Pass
Fail
Col. Add. 1,2 & Row Add. 1,2,3
Data
tPROG
“0”
“1”
Program and Read Status Operation
R/B#
I/Ox 80h Address &
Data Input 10h 70h I/O0
Pass
Fail
Col. Add. 1,2 & Row Add. 1,2,3
Data
tPROG
85h Address &
Data Input
Col. Add. 1,2
Data
“0”
“1”
Random Data Input In a Page
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8.3 CACHE PROGRAM
The Cache Program is an extension of Page Program, which is executed with 2,112 byte(x8) or 1,056 words(x16)
data registers, and is available only within a block. Since the device has 1 page of cache memory, serial data input
may be executed while data stored in data register are programmed into memory cell.
After writing the first set of data up to 2,112 bytes(x8) or 1,056 words(x16) into the selected cache registers,
Cache Program command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and
to start internal program operation. To transfer data from cache registers to data registers, the device remains in
Busy state for a short period of time (tCBSY) and has its cache registers ready for the next data-input while the
internal programming gets started with the data loaded into data registers. Read Status command (70h) may be
issued to find out when cache registers become ready by polling the Cache-Busy status bit (I/O6). Pass/fail status
of only the previous page is available upon the return to Ready state. When the next set of data is inputted with the
Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming
of the cache registers is initiated only when the pending program cycle is finished and the data registers are
available for the transfer of data from cache registers. The status bit (I/O5) for internal Ready/Busy may be polled
to identity the completion of internal programming. If the system monitors the progress of programming only with
R/B#, the last page of the target programming sequence must be programmed with actual Page Program command
(10h).
R/B#
I/Ox 80h Address & Data Input 15h
Col. Add. 1,2 & Row Add. 1,2,3
Data
tCBSY
R/B#
I/Ox 70h I/O0 '0'
Pass
'1'
Fail
tPROG
80h Address & Data Input 15h
Col. Add. 1,2 & Row Add. 1,2,3
Data
tCBSY
80h Address & Data Input 10h
Col. Add. 1,2 & Row Add. 1,2,3
Data
1
1
Max. 63 times repeatable
Last Page Input and Program
NOTE:
1. Since programming the last page does not employ caching, the program time has to be that of Page Program. However,
if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated
only after completion of the previous cycle, which can be expressed as the following formula.
2. tPROG = Program time for the last page + Program time for the (last-1)th page – (Program command cycle time + Last page
data loading time)
Fast Cache Program (Available only within a Block)
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8.4 COPY-BACK PROGRAM
Copy-Back Program is designed to efficiently copy data stored in memory cells without time-consuming data
reloading when there is no bit error detected in the stored data. The benefit is particularly obvious when a portion
of a block is updated and the rest of the block needs to be copied to a newly assigned empty block. Copy-Back
operation is a sequential execution of Read for Copy-Back and of Copy-Back Program with Destination address. A
Read for Copy-Back operation with “35h” command and the Source address moves the whole 2,112byte data into
the internal buffer. The host controller can detect bit errors by sequentially reading the data output. Copy-Back
Program is initiated by issuing Page-Copy Data-Input command (85h) with Destination address. If data modification
is necessary to correct bit errors and to avoid error propagation, data can be reloaded after the Destination address.
Data modification can be repeated multiple times as shown in Figure below. Actual programming operation begins
when Program Confirm command (10h) is issued. Once the program process starts, the Read Status command
(70h) may be entered to read the status register. The host controller can detect the completion of a program cycle
by monitoring the R/B# output, or the Status bit (I/O6) of the Status Register. When the Copy-Back Program is
complete, the Status Bit (I/O0) may be checked. The command register remains Read Status mode until another
valid command is written to it.
R/B#
I/Ox 70h I/O0 '0'
Pass
'1'
Fail
Col. Add. 1,2 & Row Add. 1,2,3
Source Address
tR
Data output00h Address
5Cycles 35h 85h Address
5Cycles 10h
tPROG
Col. Add. 1,2 & Row Add. 1,2,3
Destination Address
Page Copy-Back Program Operation
Page Copy-Back Program Operation with Random Data Input
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8.5 BLOCK ERASE
The block-based Erase operation is initiated by an Erase Setup command (60h), followed by a three-cycle row
address, in which only Plane address and Block address are valid while Page address is ignored. The Erase
Confirm command (D0h) following the row address starts the internal erasing process. The two-step command
sequence is designed to prevent memory content from being inadvertently changed by external noise.
At the rising edge of WE# after the Erase Confirm command input, the internal control logic handles erase and
erase-verify. When the erase operation is completed, the host controller can check Status bit (I/O0) to see if the
erase operation is successfully done. Figure below illustrates a block erase sequence, and the address input (the
first page address of the selected block) is placed in between commands 60h and D0h. After tBERS erase time,
the R/B# de-asserts to ready state. Read Status command (70h) can be issued right after D0h to check the
execution status of erase operation.
R/B#
I/Ox 60h Address Input D0h 70h I/O0 '0'
Pass
'1'
Fail
Row Add. 1,2,3
tBERS
Block Erase Operation
8.6 READ STATUS
A status register on the device is used to check whether program or erase operation is completed and whether
the operation is completed successfully. After writing 70h/F1h command to the command register, a read cycle
outputs the content of the status register to I/O pins on the falling edge of CE# or RE#, whichever occurs last.
These two commands allow the system to poll the progress of each device in multiple memory connections even
when R/B# pins are common-wired. RE# or CE# does not need to toggle for status change.
The command register remains in Read Status mode unless other commands are issued to it. Therefore, if the
status register is read during a random read cycle, a read command (00h) is needed to start read cycles.
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Table 8.1 Status Register Definition for 70h Command
I/O
Page Program
Block Erase
Cache Program
Read
Cache Read
Definition
I/O 0
Pass/Fail
Pass/Fail
Pass/Fail(N)
NA
NA
Pass : 0
Fail : 1
I/O 1
NA
NA
Pass/ Fail (N-1)
NA
NA
Don’t cared
I/O 2
NA
(Pass/Fail,OTP)
NA
NA
NA
NA
Don’t cared
I/O 3
NA
NA
NA
NA
NA
Don’t cared
I/O 4
NA
NA
NA
NA
NA
Don’t cared
I/O 5
NA
NA
True
Ready/Busy
NA
True
Ready/Busy
Busy : 0
Ready : 1
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Busy : 0
Ready : 1
I/O 7
Write Protect
Write Protect
Write Protect
Write Protect
Write Protect
Protected :0
Not Protected : 1
Note:
1. I/Os defined NA are recommended to be masked out when Read Status is being executed.
2. N = current page, N-1 = previous page.
Table 8.2 Status Register Definition for F1h Command
I/O
Page Program
Block Erase
Cache Program
Read
Cache Read
Definition
I/O 0
Chip Pass/Fail
Chip Pass/Fail
Chip Pass/Fail(N)
NA
NA
Pass : 0
Fail : 1
I/O 1
Plane0
Pass/Fail
Plane0
Pass/Fail
Plane0 Pass/Fail(N)
NA
NA
Pass : 0
Fail : 1
I/O 2
Plane1
Pass/Fail
Plane1
Pass/Fail
Plane1 Pass/Fail(N)
NA
NA
Pass : 0
Fail : 1
I/O 3
NA
NA
Plane0 Pass/Fail(N-1)
NA
NA
Pass : 0
Fail : 1
I/O 4
NA
NA
Plane1 Pass/Fail(N-1)
NA
NA
Pass : 0
Fail : 1
I/O 5
NA
NA
True Ready/Busy
NA
True
Ready/Busy
Busy : 0
Ready : 1
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Busy : 0
Ready : 1
I/O 7
Write Protect
Write Protect
Write Protect
Write
Protect
Write Protect
Protected : 0
Not Protected : 1
Note:
3. I/Os defined NA are recommended to be masked out when Read Status is being executed.
4. N = current page, N-1 = previous page.
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8.7 READ ID
The device contains a product identification mode, initiated by writing 90h to the command register,
followed by an address input of 00h. Five read cycles sequentially output the manufacturer code (C8h),
and the device code and 3rd, 4th, 5th cycle ID respectively. The command register remains in Read ID
mode until further commands are issued to it.
Read ID Operation
Table 8.3 ID definition Table
Part No.
1st Cycle
(Maker Code)
2nd Cycle
(Device Code)
3rd Cycle
4th Cycle
5th Cycle
IS34/35MW02G084(X8)
C8h
AAh
90h
15h
44h
IS34/35MW02G164(X16)
C8h
BAh
90h
55h
44h
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8.8 RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy
state during random read, program or erase mode, the reset operation will abort these operations. The contents
of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The
command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when
WP# is high. If the device is already in reset state a new reset command will be accepted by the command
register. The R/B# pin changes to low for tRST after the Reset command is written. Refer to Figure below.
Reset Operation
Table 8.4 Device Status Table
After Power-up
After Reset
Operation Mode
00h Command is latched
Waiting for next command
R/B#
I/Ox
tRST
FFh
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8.9 CACHE READ
Cache Read is an extension of Page Read, and is available only within a block. The normal Page Read
command (00h-30h) is always issued before invoking Cache Read. After issuing the Cache Read command
(31h), read data of the designated page (page N) are transferred from data registers to cache registers in a short
time period of tDCBSYR, and then data of the next page (page N+1) is transferred to data registers while the
data in the cache registers are being read out. Host controller can retrieve continuous data and achieve fast read
performance by iterating Cache Read operation. The Read Start for Last Page Cache Read command (3Fh) is
used to complete data transfer from memory cells to data registers.
Read Operation with Cache Read
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8.10 TWO-PLANE PAGE READ
Two-Plane Page Read is an extension of Page Read, for a single plane with 2,112 byte data registers. Since the
device is equipped with two memory planes, activating the two sets of 2,112 byte data registers enables a
random read of two pages. Two-Plane Page Read is initiated by repeating command 60h followed by three
address cycles twice. In this case, only same page of same block can be selected from each plane.
After Read Confirm command(30h) the 4,224 bytes of data within the selected two page are transferred to the
cache registers via data registers in less than 25us(tR). The system controller can detect the completion of data
transfer (tR) by monitoring the output of R/B pin.
Once the data is loaded into the cache registers, the data output of first plane can be read out by issuing
command 00h with five address cycles, command 05h with two column address and finally E0h. The data output
of second plane can be read out using the identical command sequences.
R/B#
I/Ox 60h
tR
Address
(3 Cycle) 60h 30h
Address
(3 Cycle)
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
R/B#
I/Ox 00h Address
(5 Cycle) 05h E0h
Row Add. 1,2,3
Address
(2 Cycle) Data Output
R/B#
I/Ox 00h Address
(5 Cycle) 05h E0h
Address
(2 Cycle) Data Output
1
1 2
2
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
Row Add. 1,2,3
Column address: Valid
Col. Add. 1,2
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
Col. Add. 1,2 & Row Add. 1,2,3
Column address: Valid
Col. Add. 1,2
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
Col. Add. 1,2 & Row Add. 1,2,3
Two-Plane Page Read
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8.11 TWO-PLANE CACHE READ
Two-Plane Cache Read
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8.12 TWO-PLANE PAGE PROGRAM
Two-Plane Page Program is an extension of Page Program, for a single plane with 2,112 byte data registers.
Since the device is equipped with two memory planes, activating the two sets of 2112 byte data registers enables
a simultaneous programming of two pages.
After writing the first set of data up to 2,112 byte into the selected data registers via cache registers, Dummy
Page Program command (11h) instead of actual Page Program command (10h) is inputted to finish data-loading
of the first plane. Since no programming process is involved, R/B remains in busy state for a short period of time
(tDBSY). Read Status command (70h) may be issued to find out when the device returns to ready state by polling
the R/B status bit (I/O 6). Then the next set of data for the other plane is inputted after 81h command and
address sequences. After inputting data for the last page, actual True Page Program (10h) instead of dummy
Page Program command (11h) must be followed to start the programming process. The operation of R/B and
Read Status is the same as that of Page Program. Although two planes are programmed simultaneously,
pass/fail is not available for each page when the program operation completes. Status bit of I/O 0 is set to “1”
when any of the pages fails.
Two-Plane Page Program
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8.13 TWO-PLANE COPY BACK PROGRAM
Two-Plane Copy-Back Program is an extension of Copy-Back Program, for a single plane with 2,112 byte data
registers. Since the device is equipped with two memory planes, activating the two sets of 2,112 byte data
registers enables a simultaneous programming of two pages.
R/B#
I/Ox 60h
tR
Address
(3 Cycle) 60h 35h
Address
(3 Cycle)
R/B#
I/Ox 00h Address
(5 Cycle) 05h E0h
Address
(2 Cycle) Data Output
R/B#
I/Ox 00h Address
(5 Cycle) 05h E0h
Address
(2 Cycle) Data Output
1
1 2
2
R/B#
I/Ox 85h
tPROG
70h/
F1h I/Ox
“0”
Fail
“1”Pass
Address
(5 Cycle) 81h Address
(5 Cycle) 10h
11h
tDBSY
Note
Data Field
Spare Field
Data Field
Spare Field
1
2
31
2
3
(1): Two-Plane Read for Copy Back
(2): Two-Plane Random Data Out
(3): Two-Plane Copy Back Program
Source page Source page
Target pageTarget page
Plane0 Plane1
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
Row Add. 1,2,3
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
Row Add. 1,2,3
Column address: Valid
Col. Add. 1,2
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
Col. Add. 1,2 & Row Add. 1,2,3
Column address: Valid
Col. Add. 1,2
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
Col. Add. 1,2 & Row Add. 1,2,3
3
3Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
Destination Address
Col. Add. 1,2 & Row Add. 1,2,3 Destination Address
Col. Add. 1,2 & Row Add. 1,2,3
Two-Plane Copy Back Program
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Two-Plane Copy Back Program with Random Data Input
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8.14 TWO-PLANE CACHE PROGRAM
Two-Plane Cache Program
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8.15 TWO-PLANE BLOCK ERASE
Two-Plane Block Erase
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8.16 READY/BUSY#
The device has a R/B# output that provides a hardware method of indicating the completion of a page program,
erase and random read completion. The R/B# pin is normally high but transition to low after program or erase
command is written to the command register or random read is started after address loading. It returns to high
when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or
more R/B# outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B#) and current drain during
busy (ibusy) , an appropriate value can be obtained with the following reference chart. Its value can be
determined by the following guidance
Ready/Busy# Pin Electrical Specifications
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8.17 DATA PROTECTION AND POWER UP SEQUENCE
The timing sequence shown in the figure below is necessary for the power-on/off sequence.
The device internal initialization starts after the power supply reaches an appropriate level in the power on
sequence. During the initialization the device R/B# signal indicates the Busy state as shown in the figure below.
In this time period, the acceptable commands are 70h.
The WP# signal is useful for protecting against data corruption at power on/off.
AC Waveforms for Power Transition
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8.18 WRITE PROTECT OPERATION
Enabling WP# during erase and program busy is prohibited. The erase and program operations are enabled and
disabled as follows:
Enable Programming
WE#
I/Ox 80h
WP#
R/B#
10h
tWW (Min. 100 ns)
Note: WP# keeps “High” until programming finish
Disable Programming
WE#
I/Ox 80h
WP#
R/B#
10h
tWW (Min. 100 ns)
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Enable Erasing
WE#
I/Ox 60h
WP#
R/B#
D0h
tWW (Min. 100 ns)
NOTE: WP# keeps “High” until erasing finish
Disable Erasing
WE#
I/Ox 60h
WP#
R/B#
D0h
tWW (Min. 100 ns)
Enable/Disable Programming and Enable Erasing
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9. INVALID BLOCK AND ERROR MANAGEMENT
9.1 MASK OUT INITIAL INVALID BLOCK(S)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not
guaranteed by ISSI. The information regarding the initial invalid block(s) is called the initial invalid block information.
Devices with initial invalid block(s) have the same quality level as devices with all valid blocks and have the same
AC and DC characteristics. An initial invalid block(s) does not affect the performance of valid block(s) because it is
isolated from the bit line and the common source line by a select transistor. The system design must be able to
mask out the initial invalid block(s) via address mapping.
The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase
cycles with 4bit/512Byte ECC.
9.2 IDENTIFYING INITIAL INVALID BLOCK(S) AND BLOCK REPLACEMENT MANAGEMENT
Unpredictable behavior may result from programming or erasing the defective blocks. Figure below illustrates an
algorithm for searching factory-mapped defects, and the algorithm needs to be executed prior to any erase or
program operations.
A host controller has to scan the data at the first byte in the spare area of the first page or second page of each
block from block 0 to the last block using page read command.
Any block where the 1st byte in the spare area of the first or second page does not contain “FFh” is an invalid block.
Do not erase or program factory-marked bad blocks. The host controller must be able to recognize the initial invalid
block information and to create a corresponding table to manage block replacement upon erase or program error
when additional invalid blocks develop with Flash memory usage.
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Check for “FFh” at the first byte in the
spare area of the first page or second
page of each block.
Figure 9.1 Algorithm for Bad Block Scanning
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9.3 ERROR IN READ OR WRITE OPERATION
Within its lifetime, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report
for the actual data. The following possible failure modes should be considered to implement a highly reliable
system. In the case of status read failure after erase or program, block replacement should be done. Because
program status fail during a page program does not affect the data of the other pages in the same block, block
replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the
current target data and copying the rest of the replaced block. In case of Read, ECC must be employed. To improve
the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The additional block failure rate does not include those reclaimed
blocks.
Failure Mode
Detection and Countermeasure Sequence
Write
Erase failure
Read Status after Erase Block Replacement
Program failure
Read Status after Program Block Replacement
Read
Up to 4 bit failure
Verify ECC ECC Correction
Note: Error Correcting Code RS Code or BCH Code etc.
Example: 4bit correction / 512 Byte
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Figure 9.2 Program Flow Chart
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Figure 9.3 Erase Flow Chart
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Figure 9.4 Read Flow Chart
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An error occurs.n th
page
1st
~
(n-1) th
Block A
An error occurs.n th
page
1st
~
(n-1) th
Block B Buffer memory of the
controller
1
2
* Step 1
When an error happens in the nth page of the Block 'A' during erase or program
operation.
* Step 2
Copy the data in the 1st ~ (n-1)th page to the same location of another free
block. (Block 'B')
* Step 3
Then, copy the nth page data of the Block 'A' in the buffer memory to the nth
page of the Block 'B'
* Step 4
Do not erase or program to Block 'A' by creating an 'invalid block' table or
other appropriate scheme.
Figure 9.5 Blcok Replacement
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9.4 ADDRESSING FOR PROGRAM OPERATION
Figure 9.6 Addressing for Program Operation
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9.5 SYSTEM INTERFACE USING CE# NOT CARE OPERATION
For an easier system interface, CE# may be inactive during the data-loading or serial access as shown below.
The internal 2,112byte data registers are utilized as separate buffers for this operation and the system design
gets more flexible. In addition, for voice or audio applications that use slow cycle time on the order of μ-seconds,
de-activating CE# during the data-loading and serial access would provide significant savings in power
consumption.
Figure 9.7 Program/Read-Operation with CE# Not-Care Operation
Address Information
Device
Data
I/O
Address
Data In/Out
I/Ox
Col.
Add1
Col.
Add2
Row Add1
Row Add2
Row
Add3
IS34/35MW02G084
2,112Byte
I/O 0~I/O 7
A0 ~ A7
A8 ~ A11
A12 ~ A19
A20 ~ A27
A28
IS34/35MW02G164
1,056Word
I/O 0~I/O 15
A0 ~ A7
A8 ~ A10
A11 ~ A18
A19 ~ A26
A27
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10. PACKAGE TYPE INFORMATION
10.1 48-PIN TSOP (TYPE I) PACKAGE (T)
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10.2 63-BALL VFBGA PACKAGE (B)
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11. ORDERING INFORMATION – Valid Part Numbers
IS 34 M W 02G 08 4 - T L I
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
E = Industrial (-40°C to +105°C)
A1 = Automotive Grade (-40°C to +85°C)
A2 = Automotive Grade (-40°C to +105°C)
PACKAGING CONTENT
L = RoHS compliant
PACKAGE Type
T = 48-pin TSOP (Type I) (1)
B = 63-ball VFBGA
Die Revision
Blank = First Gen.
ECC Requirement
4 = 4-bit ECC
Bus Width
08 = x8 NAND
16 = x16 NAND
Density
02G = 2 Gigabit
VDD
W = 1.8V
Technology
M = Standard NAND (SLC)
Product Family
34 = NAND
35 = Automotive NAND
BASE PART NUMBER
IS = Integrated Silicon Solution Inc.
Notes:
1. Call Factory for TSOP1 x16
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Note:
1. Automotive Grade meets AEC-Q100 requirements with PPAP.
Temp Grades: A1= -40 to 85°C, A2= -40 to 105°C
VDD
Density
Bus
Temp. Grade
Order Part Number
Package
1.8V
2Gb
X8
Industrial
IS34MW02G084-TLI
48-pin TSOP (Type I)
IS34MW02G084-BLI
63-ball VFBGA
Extended
IS34MW02G084-TLE
48-pin TSOP (Type I)
IS34MW02G084-BLE
63-ball VFBGA
Automotive (A1)(1)
IS35MW02G084-TLA1
48-pin TSOP (Type I)
IS35MW02G084-BLA1
63-ball VFBGA
Automotive (A2)(1)
IS35MW02G084-TLA2
48-pin TSOP (Type I)
IS35MW02G084-BLA2
63-ball VFBGA
X16
Industrial
IS34MW02G164-BLI
63-ball VFBGA
Extended
IS34MW02G164-BLE
63-ball VFBGA
Automotive (A1)(1)
IS35MW02G164-BLA1
63-ball VFBGA
Automotive (A2)(1)
IS35MW02G164-BLA2
63-ball VFBGA