For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
General Description
Features
Functional Diagram
The HMC450QS16G & HMC450QS16GE are high
efficiency GaAs InGaP HBT Medium Power MMIC
ampli ers operating between 800 and 1000 MHz. The
ampli er is packaged in a low cost, surface mount
16 lead package and offers the same pinout and
functionality as the higher band HMC413QS16G 1.6-
2.3 GHz PA. With a minimum of external components,
the ampli er provides 26 dB of gain, +40 dBm OIP3
and +28.5 dBm of saturated power from a +5V supply
voltage. The integrated power control (Vpd) can be used
for full power down or RF output power/current control.
The combination of high gain and high output IP3
make the HMC450QS16G & HMC450QS16GE ideal
linear drivers for Cellular, PCS & 3G applications.
Gain: 26 dB
32% PAE @ 28.5 dBm Output Power
+40 dBm Output IP3
Integrated Power Control (Vpd)
Included in the HMC-DK002 Designer’s Kit
Electrical Speci cations, TA = +25° C, Vs = +5V, Vpd = +4V [1]
Typical Applications
The HMC450QS16G / HMC450QS16GE is ideal for
power and driver ampli er applications:
• GSM, GPRS, & Edge
• CDMA & WCDMA
• Base Stations & Repeaters
Parameter Min. Typ. Max. Units
Frequency Range 0.8 - 1.0 GHz
Gain 23 26 dB
Gain Variation Over Temperature 0.015 0.025 dB/°C
Input Return Loss 17 dB
Output Return Loss 13 dB
Output Power for 1 dB Compression (P1dB) 23 26 dBm
Saturated Output Power (Psat) 28.5 dBm
Output Third Order Intercept (IP3) [2] 37 40 dBm
Noise Figure 8dB
Supply Current (Icq) 310 mA
Control Current (Ipd) 12 mA
Switching Speed tON, tOFF 10 ns
[1] Speci cations and data re ect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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Input Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Output Return Loss vs. Temperature
Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature
-20
-15
-10
-5
0
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
0.6 0.7 0.8 0.9 1 1.1 1.2
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
20
22
24
26
28
30
32
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain, Power, OIP3 and Supply Current
vs. Power Down Voltage @ 900 MHz
20
21
22
23
24
25
26
27
28
29
30
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
21
22
23
24
25
26
27
28
29
30
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
PSAT (dBm)
FREQUENCY (GHz)
Gain and Power vs.
Supply Voltage @ 900 MHz, Vpd= 4V
30
32
34
36
38
40
42
44
46
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
0.7 0.8 0.9 1 1.1
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
20
22
24
26
28
30
2.75 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Gain
Psat
P1dB
GAIN (dB), P1dB (dBm), Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
8
12
16
20
24
28
32
36
40
40
80
120
160
200
240
280
320
360
2.8 3 3.2 3.4 3.6 3.8 4
Gain
Psat
P1dB
OIP3
Icc
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Icc (mA)
Vpd (Vdc)
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Power Compression @ 900 MHz
ACPR vs. Supply Voltage @ 900 MHz
CDMA IS95, 9 Channels Forward
0
4
8
12
16
20
24
28
32
36
40
-20 -16 -12 -8 -4 0 4 8
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
8 1012141618202224
ACPR (dBc)
Channel Power (dBm)
CDMA IS95
Frequency: 900 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
5.5V
4.5V
5V
Source ACPR
1
1.2
1.4
1.6
1.8
2
-20 -15 -10 -5 0 5 10
POWER DISSIPATION (W)
INPUT POWER (dBm)
Max Pdiss @ +85C
Power Dissipation@ 900 MHz
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 118
LINEAR & POWER AMPLIFIERS - SMT
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5 Vdc
Control Voltage (Vpd1, Vpd2) +5Vdc
RF Input Power (RFIN)(Vs = +5Vdc,
VPD = +4.0 Vdc) +10 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 28 mW/°C above 85 °C) 1.86 W
Thermal Resistance
(junction to ground paddle) 35 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Vs (V) Icq (mA)
4.75 300
5.0 310
5.25 325
Typical Supply Current
vs. Supply Voltage
Note: Ampli er will operate over full voltage range shown above
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC450QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H450
XXXX
HMC450QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H450
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Pin Number Function Description Interface Schematic
1, 2, 4, 5, 7, 8,
9, 10, 13, 15 GND
Ground: Backside of package has exposed metal ground slug that must
be connected to ground thru a short path. Vias under the device are
required.
3, 14 Vpd1, Vpd2
Power Control Pin. For maximum power, this pin should be connected
to 4.0V. For 5V operation, a dropping resistor is required. A higher
voltage is not recommended. For lower idle current, this voltage can be
reduced.
6 RFIN This pin is AC coupled and matched to 50 Ohms from 0.8 to 1.0 GHz.
11, 12 RFOUT RF output and bias for the output stage.
16 Vcc Power supply voltage for the  rst ampli er stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
Pin Descriptions
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 120
LINEAR & POWER AMPLIFIERS - SMT
Application Circuit
TL1 TL2 TL3 TL4 TL5 TL6
Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm
Physical Length 0.08” 0.05” 0.02” 0.02” 0.02” 0.02”
Electrical Length 4˚ 2.5˚ 1.02˚ 1.02˚ 1.02˚ 1.02˚
PCB Material: 10 mil Rogers 4350 Er = 3.48
Recommended Component Values
C1, C2, C7, C8 100 pF
C3 1000 pF
C4 3.9 pF
C5 1.2 pF
C6 27 pF
C9, C10 2.2 μF
L1 1.9 nH
L2 1.0 nH
L3 56 nH
R1, R2 50 Ohms
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Evaluation PCB
The circuit board used in the  nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108349 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1, C7, C8 100 pF Capacitor, 0402 Pkg.
C2 100 pF Capacitor, 0603 Pkg.
C3 1000 pF Capacitor, 0603 Pkg.
C4 3.9 pF Capacitor, 0402 Pkg.
C5 1.2 pF Capacitor, 0402 Pkg.
C6 27 pF Capacitor, 0402 Pkg.
C9, C10 2.2 uF Capacitor, Tantalum
L1 1.9 nH Inductor 0402 Pkg.
L2 1.0 nH Inductor, 0402 Pkg.
L3 56nH Inductor, 0805 Pkg.
R1, R2 50 Ohms Resistor, 0402 Pkg.
U1 HMC450QS16G / HMC450QS16GE
Power Amp.
PCB [2] 108191 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406