1
Subject to change without notice.
www.cree.com
FEATURES
• RectangularLEDRFPerformance
– 450&460nm-76mWmin
• HighReliability-Eutectic,SolderPasteorPreforms
Attach
• LowForwardVoltage-3.2VfTypicalat50mA
• MaximumDCForwardCurrent–150mA
• 1000-VESDThresholdRating
• InGaNJunctiononThermallyConductiveSiC
Substrate
APPLICATIONS
• LargeLCDBacklighting
– Television
• GeneralIllumination
• MediumLCDBacklighting
– PortablePCs
– Monitors
• LEDVideoDisplays
• WhiteLEDs
TR3547M™ LEDs
CxxxTR3547M-Sxx00
Data Sheet
Cree’sTR3547MLEDsarethenextgenerationofsolid-stateLEDemittersthatcombinehighlyefcientInGaNmaterials
withCree’sproprietarydevicetechnologyandsilicon-carbidesubstratestodeliversuperiorvaluefortheTV-backlighting
andgeneral-illuminationmarkets.TheTR3547MLEDsareamongthebrightestinthetop-viewmarketwhiledelivering
alowforwardvoltage,resultinginaverybrightandhighlyefcientsolution.Themetalbacksideallowsforeutectic
dieattachandenablessuperiorperformancefromimprovedthermalmanagement.Thedesignisoptimallysuitedfor
industry-standardtop-viewpackages.
CxxxTR3547M-Sxx00 Chip Diagram
Data Sheet: CPR3FL Rev. -
Top View Bottom View Die Cross Section
Anode(+)
90μmdiameter
TR3547MLED
350x470μm
MetalBackside
160x280μm
t=155μm
BottomSurface
200x320μm
Cathode(-)
98μm
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc.
2CPR3FL Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR3547M-Sxx00
DCForwardCurrent 150mA
PeakForwardCurrent(1/10dutycycle@1kHz) 200mA
LEDJunctionTemperature 150°C
ReverseVoltage 5V
OperatingTemperatureRange -40°Cto+100°C
StorageTemperatureRange -40°Cto+100°C
ElectrostaticDischargeThreshold(HBM)Note2 1000V
ElectrostaticDischargeClassication(MIL-STD-883E)Note2 Class2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA Note 3
Part Number Forward Voltage (Vf, V) Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min. Typ. Max. Max. Typ.
C450TR3547M-Sxx00 2.8 3.2 3.5 2 20
C460TR3547M-Sxx00 2.8 3.2 3.5 2 21
Mechanical Specications CxxxTR3547M-Sxx00
Description Dimension Tolerance
P-NJunctionArea(μm) 310x430 ±35
ChipArea(μm) 350x470 ±35
ChipThickness(μm) 155 ±15
AuBondPadDiameterAnode(μm) 90 -5,+15
AuBondPadThicknesses(μm) 1.0 ±0.5
AuBondPadAreaCathode(μm) 98x98 -5,+15
BottomArea(μm) 200x320 ±35
BottomContactMetal(μm) 160x280 ±25
BottomContactMetalThickness(μm) 3.0 ±1.0
Notes:
1. Maximumratingsarepackage-dependent.TheaboveratingsweredeterminedusingaCreeSMTpackage(withsiliconeencapsulation
andintrinsicAuSnmetaldieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Junctiontemperatureshouldbe
characterized in a specic package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5
seconds).
2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche
energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.
3. Allproductsconformtothelistedminimumandmaximumspecicationsforelectricalandopticalcharacteristicswhenassembled
andoperatedat50mAwithinthemaximumratingsshownabove.Efciencydecreasesathighercurrents.Typicalvaluesgiven
arewithinthe rangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.All
measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxyencapsulantandintrinsicAuSnmetaldie
attach).OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc.
3CPR3FL Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR3547M-Sxx00
LED chips are sorted to the radiant ux and dominant wavelength bins shown. A sorted die sheet contains die
fromonlyonebin.Sorteddiekit(CxxxTR3547M-Sxxxx)ordersmaybelledwithanyorallbins(CxxxTR3547M-xxxx)
containedinthekit.AllradiantuxanddominantwavelengthvaluesshownandspeciedareatIf=50mA.
Dominant Wavelength (nm)
C450TR3547M-S7600
C450TR3547M-0217 C450TR3547M-0218 C450TR3547M-0219 C450TR3547M-0220
C450TR3547M-0213 C450TR3547M-0214 C450TR3547M-0215 C450TR3547M-0216
C450TR3547M-0209 C450TR3547M-0210 C450TR3547M-0211 C450TR3547M-0212
C450TR3547M-0205 C450TR3547M-0206 C450TR3547M-0207 C450TR3547M-0208
447.5 450 452.5445 455
94
88
82
76
Radiant Flux (mW)
C460TR3547M-S7600
C460TR3547M-0217 C460TR3547M-0218 C460TR3547M-0219 C460TR3547M-0220
C460TR3547M-0213 C460TR3547M-0214 C460TR3547M-0215 C460TR3547M-0216
C460TR3547M-0209 C460TR3547M-0210 C460TR3547M-0211 C460TR3547M-0212
C460TR3547M-0205 C460TR3547M-0206 C460TR3547M-0207 C460TR3547M-0208
Dominant Wavelength (nm)
457.5 460 462.5455 465
Radiant Flux (mW)
94
88
82
76
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc.
4CPR3FL Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
ThesearerepresentativemeasurementsfortheTRLEDproduct.Actualcurveswillvaryslightlyforthevariousradiant
uxanddominantwavelengthbins.
0
20
40
60
80
100
120
320 420 520 620
Relative Intensity (%)
Wavelength (nm)
Relative Intensity vs Peak Wavelength
0%
50%
100%
150%
200%
250%
300%
350%
400%
050 100 150 200
Relative Light Intensity
If (mA)
Relative Intensity vs. Forward Current
-2
-1
0
1
2
050 100 150 200
Dominant Wavelength Shift (nm)
If (mA)
Wavelength Shift vs. Forward Current
0%
50%
100%
150%
200%
250%
300%
350%
400%
050 100 150 200
If (mA)
Relative Intensity vs. Forward Current
-2
-1
0
1
2
050 100 150 200
Dominant Wavelength Shift (nm)
If (mA)
Wavelength Shift vs. Forward Current
0
50
100
150
200
0 1 2 3 4 5
If (mA)
Vf (V)
Forward Current vs. Forward Voltage
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc.
5CPR3FL Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2009, Cree, Inc. ConfidentialCopyright © 2009, Cree, Inc. Confidential pg. 1
Radiation Pattern
ThisisarepresentativeradiationpatternfortheTRLEDproduct.Actualpatternswillvaryslightlyforeachchip.