The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 1999
MOS FIELD EFFECT TRANSISTOR
2SK3359
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY PRODUCT INFORMATION
Document No. D14323EJ1V0PM00 (1st edition)
Date Published May 1999 NS CP(K)
Printed in Japan
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•Low on-state resistance
RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
•Low Ciss: Ciss = 2950 pF TYP.
•Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) VDSS 100 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V
Drain Current (DC) ID(DC) ±70 A
Drain Current (Pulse) Note1 ID(pulse) ±280 A
Total Power Dissipation (TC = 25°C) PT100 W
Total Power Dissipation (TA = 25°C) PT1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS T.B.D. A
Single Avalanche Energy Note2 EAS T.B.D. mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 1.25 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3359 TO-220AB
2SK3359-S TO-262
2SK3359-Z TO-220SMD
Preliminary Product Information D14323EJ1V0PM00
2
2SK3359
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Sourc e On-state Res i s tance RDS(on)1 VGS = 10 V, ID = 35 A1820m
Ω
RDS(on)2 VGS = 4.5 V, ID = 35 A2228m
Ω
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Adm i ttance | yfs |V
DS = 10 V, ID = 35 A 20 40 S
Drain Leakage Current IDSS VDS = 100 V, VGS = 0 V10
µ
A
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V±10
µ
A
Input Capaci tance Ciss VDS = 10 V 2950 pF
Output Capaci tance Coss VGS = 0 V 850 pF
Reverse Transf er Capac i tance Crss f = 1 MHz 310 pF
Turn-on Delay Time td(on) ID = 35 A80ns
Rise Time trVGS(on) = 10 V 190 ns
Turn-off Del ay T ime td(off) VDD = 50 V 260 ns
Fall Time tfRG = 10 Ω130 ns
Total Gate Charge QGID = 70 A 140 nC
Gate to Source Charge QGS VDD = 80 V13nC
Gate to Drain Charge QGD VGS(on) = 10 V46nC
Body Diode Forward Voltage VF(S-D) IF = 70 A, VGS = 0 V1.0V
Reverse Recovery Time trr IF = 70 A, VGS = 0 V 300 ns
Reverse Recovery Charge Qrr di/dt = 100 A /
µ
s 560 nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0
V
PG.
R
G
= 25 Ω
50 Ω
D.U.T. L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG. R
G
= 10 Ω
D.U.T. R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T. R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 µs
Duty Cycle ≤ 1 %
τ
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%10
%
Preliminary Product Information D14323EJ1V0PM00 3
2SK3359
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)
3)TO-220SMD (MP-25Z)
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10.6 MAX.
10.0 3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
1.0±0.5
(10)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
3.0±0.5
11±0.4
4
2.8±0.2
4.8 MAX. 1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.0±0.3
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3359
• The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
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for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M5 98. 8
