Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM7A30A60B/D Integrated Power Stage for 3.0 hp Motor Drives (This device is not recommended for new designs) (This device is replaced by MHPM7A30E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase output inverter, brake transistor/diode, current sense resistor and temperature sensor in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board. * DC Bus Current Sense Resistor Included * Short Circuit Rated 10 s @ 25C, 300V * Temperature Sensor Included * Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) * Convenient Package Outline 30 AMP, 600 VOLT HYBRID POWER MODULE Recognized * UL * Access to Positive and Negative DC Bus * Visit our website at http://www.mot-sps.com/tsg/ PLASTIC PACKAGE CASE 440A-02, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit VRRM 600 V IO 30 A IFSM 360 A IGBT Reverse Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V Continuous IGBT Collector Current ICmax 30 A Peak Repetitive IGBT Collector Current - (PW = 1.0 ms)(2) IC(pk) 60 A Continuous Free-Wheeling Diode Current IFmax 30 A Peak Repetitive Free-Wheeling Diode Current - (PW = 1.0 ms)(2) IF(pk) 60 A IGBT Power Dissipation per die (TC = 95C) PD 85 W Free-Wheeling Diode Power Dissipation per die (TC = 95C) PD 40 W Junction Temperature Range TJ - 40 to +125 C Short Circuit Duration (VCE = 300V, TJ = 25C) tsc 10 s INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (TJ = 125C) Average Output Rectified Current Peak Non-repetitive Surge Current (1/2 cycle)(1) OUTPUT INVERTER (1) 1 cycle = 50 or 60 Hz (2) 1 ms = 1.0% duty cycle REV 2 IGBT Motorola Motorola, Inc. 1998 Device Data 1 MHPM7A30A60B MAXIMUM DEVICE RATINGS (continued) (TJ = 25C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V Continuous IGBT Collector Current ICmax 30 A Peak Repetitive IGBT Collector Current(2) IC(pk) 60 A PD 85 W Peak Repetitive Output Diode Reverse Voltage (TC = 95C) VRRM 600 V Continuous Output Diode Current IFmax 30 A Peak Output Diode Current (PW = 1.0 ms) (2) IF(pk) 60 A VISO 2500 Vac Operating Case Temperature Range TC - 40 to + 90 C Storage Temperature Range Tstg - 40 to +125 C - 6.0 lb-in BRAKE CIRCUIT IGBT Power Dissipation (TC = 95C) TOTAL MODULE Isolation Voltage (47-63 Hz, 1.0 Minute Duration) Mounting Torque ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage Current (VRRM = 600 V) IR - 5.0 50 A Forward Voltage (IF = 30 A) VF - 1.16 1.5 V RJC - - 2.7 C/W Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) IGES - - 20 A Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 25C TJ = 125C ICES - - 6.0 2000 100 - INPUT RECTIFIER BRIDGE Thermal Resistance (Each Die) OUTPUT INVERTER A Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 600 - - V Collector-Emitter Saturation Voltage (IC = 30 A, VGE = 15 V) VCE(SAT) - 2.3 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies - 6600 - pF Input Gate Charge (VCE = 300 V, IC = 30 A, VGE = 15 V) QT - 220 - nC Fall Time - Inductive Load (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) tf - 300 500 ns Turn-On Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(on) = 39 ) Eon - - 3.0 mJ Turn-Off Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) Eoff - - 3.0 mJ Free Wheeling Diode Forward Voltage (IF = 30 A, VGE = 0 V) VF - 1.3 2.2 V Free Wheeling Diode Reverse Recovery Time (IF = 30 A, V = 300 V, di/dt = 150 A/s) trr - 150 200 ns Free Wheeling Diode Stored Charge (IF = 30 A, V = 300 V, di/dt = 150 A/s) Qrr - 1580 2300 nC Thermal Resistance - IGBT (Each Die) RJC - - 1.2 C/W Thermal Resistance - Free-Wheeling Diode (Each Die) RJC - - 2.7 C/W (2) 1.0 ms = 1.0% duty cycle 2 Motorola IGBT Device Data MHPM7A30A60B ELECTRICAL CHARACTERISTICS (continued) (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) IGES - - 20 A Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 25C TJ = 125C ICES - - 6.0 2000 100 - BRAKE CIRCUIT A Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 600 - - V Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 30 A) VCE(SAT) - 2.3 3.5 V Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies - 6600 - pF Input Gate Charge (VCE = 300 V, IC = 30 A, VGE = 15 V) QT - 220 - nC Fall Time - Inductive Load (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) tf - 300 500 ns Turn-On Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(on) = 39 ) Eon - - 3.0 mJ Turn-Off Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) Eoff - - 3.0 mJ Output Diode Forward Voltage (IF = 30 A) VF - 1.3 2.0 V Output Diode Reverse Leakage Current IR - - 50 A Thermal Resistance - IGBT RJC - - 1.2 C/W Thermal Resistance - Diode RJC - - 2.7 C/W Rsense - 5.0 - m Rtol -1.0 - +1.0 % VF - 0.660 - V TCVF - -1.95 - mV/C SENSE RESISTOR Resistance Resistance Tolerance TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) Motorola IGBT Device Data 3 MHPM7A30A60B Typical Characteristics 60 IF, FORWARD CURRENT (AMPS) 50 40 30 20 TJ = 125C 10 50 40 30 20 TJ = 125C 10 25C 25C 0 0 0.2 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.4 0 1.6 0 0.2 Figure 1. Forward Characteristics -- Input Rectifier 12 V 9 V TJ = 125C IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TJ = 25C 50 15 V 40 30 20 10 VGE = 18 V 12 V 9V 50 15 V 40 30 20 10 0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 0 20 IC = 15 A 16 TJ = 25C 30 A 60 A 12 8 4 0 8 10 12 14 16 18 VGE, GATE-EMITTER VOLTAGE (VOLTS) Figure 5. Collector-Emitter Voltage versus Gate-Emitter Voltage 20 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 Figure 4. Forward Characteristics, TJ = 125C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Characteristics, TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.6 60 VGE = 18 V 0 4 1.4 Figure 2. Forward Characteristics -- Free-Wheeling Diode 60 6 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (VOLTS) 450 18 400 V 400 16 300 V 14 350 300 V 300 VCE = 200 V 400 V VCE = 200 V 250 200 12 10 8 150 6 100 IC = 30 A TJ = 25C 50 0 0 20 40 4 2 VGE, GATE-EMITTER VOLTAGE (VOLTS) IF, FORWARD CURRENT (AMPS) 60 0 60 80 100 120 140 160 180 200 220 240 Qg, TOTAL GATE CHARGE (nC) Figure 6. Collector-Emitter and Gate-Emitter Voltages versus Total Gate Charge Motorola IGBT Device Data MHPM7A30A60B Typical Characteristics 1000 1000 toff toff tf t, TIME (ns) t, TIME (ns) td(off) 100 tf td(off) VCE = 300 V VGE = 15 V RG(off) = 20 TJ = 125C VCE = 300 V VGE = 15 V RG(off) = 20 TJ = 25C 10 0 10 20 30 40 50 60 100 70 IC, COLLECTOR CURRENT (AMPS) 50 20 30 40 IC, COLLECTOR CURRENT (AMPS) Figure 7. Inductive Switching Times versus Collector Current, TJ = 25C Figure 8. Inductive Switching Times versus Collector Current, TJ = 125C 10000 0 60 70 100000 VCE = 300 V VGE = 15 V IC = 30 A TJ = 25C 10000 toff 1000 VCE = 300 V VGE = 15 V IC = 30 A TJ = 125C t, TIME (ns) t, TIME (ns) 10 td(off) toff td(off) 1000 tf tf 100 100 10 100 RG(off), GATE RESISTANCE (OHMS) 1000 10 Figure 9. Inductive Switching Times versus Gate Resistance, TJ = 25C 100 RG(off), GATE RESISTANCE (OHMS) 1000 Figure 10. Inductive Switching Times versus Gate Resistance, TJ = 125C 1000 10000 VCE = 300 V VGE = 15 V RG(on) = 39 VCE = 300 V VGE = 15 V IC = 30 A TJ = 125C 25C 25C 1000 t, TIME (ns) t, TIME (ns) 100 tr tr TJ = 125C 100 10 10 0 0 10 30 20 40 50 IC, COLLECTOR CURRENT (AMPS) 60 Figure 11. Inductive Switching Times versus Collector Current Motorola IGBT Device Data 70 10 100 RG(on), GATE RESISTANCE (OHMS) 1000 Figure 12. Inductive Switching Times versus Gate Resistance 5 MHPM7A30A60B Typical Characteristics 10000 VCE = 300 V VGE = 15 V RG(off) = 20 E off , TURN-OFF ENERGY LOSSES ( J) E off , TURN-OFF ENERGY LOSSES ( J) 10000 TJ = 125C 1000 25C 100 VCE = 300 V VGE = 15 V IC = 30 A 25C 1000 100 10 0 50 20 30 40 IC, COLLECTOR CURRENT (AMPS) 10 60 70 10 100 RG(off), GATE RESISTANCE (OHMS) Figure 13. Turn-Off Energy Losses versus Collector Current 100000 trr C, CAPACITANCE (pF) Irr , PEAK REVERSE RECOVERY CURRENT (A) t rr , REVERSE RECOVERY TIME (ns) TJ = 125C 25C 100 TJ = 125C 10 I rr 25C Cies 10000 1000 Coes 100 Cres -di/dt = 150 A/s 1 0 10 20 30 40 50 IF, FORWARD CURRENT (AMPS) 10 0 70 60 80 60 40 +VGE = 15 V -VGE = 0 V RG(on) = 39 TJ = 25C 20 0 0 200 400 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Reversed Biased Safe Operating Area (RBSOA) 800 10 20 30 40 50 60 70 80 90 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 16. Capacitance Variation r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 15. Reverse Recovery Characteristics -- Free-Wheeling Diode IC, COLLECTOR CURRENT (AMPS) 1000 Figure 14. Turn-Off Energy Losses versus Gate Resistance 1000 6 TJ = 125C 1.0 IGBT DIODE 0.1 0.01 0.001 1.0 10 100 1000 t, TIME (ms) Figure 18. Thermal Response Motorola IGBT Device Data MHPM7A30A60B ton toff td(on) L IC VCE tr td(off) tf 90% 90% OUTPUT, Vout INVERTED 10% RG 90% VCE INPUT, Vin 50% 50% 10% PULSE WIDTH Figure 19. Inductive Switching Time Test Circuit and Timing Chart Motorola IGBT Device Data 7 8 R S T 24 23 22 D9 D8 D11 D10 15 6 25 Q7 D7 5 -I 21 B = PIN NUMBER IDENTIFICATION N2 N1 D13 G7 7 1 D12 P2 P1 8 G2 16 G1 E1 9 4 +I Q2 Q1 D2 D1 10 +T C -T C 3 2 G4 17 G3 E3 11 Q8 TEMP SENSE Q4 Q3 D4 D3 G6 14 12 G5 E5 13 D6 D5 W V U 18 19 20 3-Phase Input Rectifier Bridge Brake IGBT/ Diode 3-Phase Output IGBT/Diode Bridge, with Current and Temperature Sense DEVICE INTEGRATION Q6 Q5 MHPM7A30A60B Figure 20. Integrated Power Stage Schematic Motorola IGBT Device Data MHPM7A30A60B PACKAGE DIMENSIONS E C AB AC AE K AA 9 PL AF 3 PL AD A N AH V Q 2 PL G 1 2 PL 17 L S M R B DETAIL Z Y 25 4 PL 18 AG T 4 PL P U J H X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G, AA...) ARE TO THE CENTER OF THE LEAD. 25 PL 7 PL D F DETAIL Z CASE 440A-02 ISSUE A Motorola IGBT Device Data DIM A B C D E F G H J K L M N P Q R S T U V X Y AA AB AC AD AE AF AG AH MILLIMETERS MIN MAX 97.54 98.55 62.74 63.75 14.60 15.88 0.56 0.97 10.80 12.06 0.81 1.22 1.60 2.21 8.58 9.19 0.56 0.97 18.80 20.57 22.86 23.88 46.23 47.24 9.78 11.05 82.55 83.57 4.01 4.62 26.42 27.43 12.06 12.95 4.32 5.33 86.36 87.38 14.22 15.24 6.55 7.16 2.49 3.10 2.24 2.84 7.32 7.92 4.78 5.38 8.58 9.19 6.05 6.65 4.78 5.38 69.34 70.36 --- 5.08 INCHES MIN MAX 3.840 3.880 2.470 2.510 0.575 0.625 0.022 0.038 0.425 0.475 0.032 0.048 0.063 0.087 0.338 0.362 0.022 0.038 0.740 0.810 0.900 0.940 1.820 1.860 0.385 0.435 3.250 3.290 0.158 0.182 1.040 1.080 0.475 0.515 0.170 0.210 3.400 3.440 0.560 0.600 0.258 0.282 0.098 0.122 0.088 0.112 0.288 0.312 0.188 0.212 0.338 0.362 0.238 0.262 0.188 0.212 2.730 2.770 --- 0.200 9 MHPM7A30A60B Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://www.mot.com/SPS/ ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 MHPM7A30A60B/D Motorola IGBT Device Data