KVR13LR9S4L/8
8GB 1Rx4 1G x 72-Bit PC3L-10600
CL9 Registered w/Parity 240-Pin DIMM
DESCRIPTION
This document describes ValueRAM's 1G x 72-bit (8GB)
DDR3L-1333 CL9 SDRAM (Synchronous DRAM), low voltage,
VLP, registered w/parity, 1Rx4 ECC memory module, based on
eighteen 1G x 4-bit FBGA components. The SPD is pro-
grammed to JEDEC standard latency DDR3-1333 timing of
9-9-9 at 1.35V and 1.5V. This 240-pin DIMM uses gold contact
fingers. The electrical and mechanical specifications are as
follows:
FEATURES
•JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
•VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
•667MHz fCK for 1333Mb/sec/pin
•8 independent internal bank
•Programmable CAS Latency: 9, 8, 7, 6
•Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
•8-bit pre-fetch
•Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•Bi-directional Differential Data Strobe
•Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
•On Die Termination using ODT pin
•On-DIMM thermal sensor (Grade B)
•Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•Asynchronous Reset
•PCB : Height 0.740” (18.75mm), double sided component
Document No. VALUERAM1256-001.B00 01/22/13 Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power (1.35V) = 4.919 W*
(1.50V) = 5.601 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM and
Register/PLL used.
Continued >>
MODULE DIMENSIONS:
Document No. VALUERAM1256-001.B00 Page 2
(Units = millimeters)
