Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 600V
▼ Fast Switching Characteristic RDS(ON) 0.85Ω
▼ Simple Drive Requirement ID8A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
TSTG Storage Temperature Range ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data & specifications subject to change without notice
AP08N60I-HF
Parameter Rating
600
Halogen-Free Product
+30
8
37
32
4.3
201001281
1
-55 to 150
-55 to 150
G
D
S
GDSTO-220CFM(I)
A
P08N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching,ruggedized design and cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 600 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=4A - - 0.85 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=4A - 9.4 - S
IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=4A - 67 107.2 nC
Qgs Gate-Source Charge VDS=480V - 9 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 26 - nC
td(on) Turn-on Delay Time2VDD=300V - 13 - ns
trRise Time ID=4A - 8 - ns
td(off) Turn-off Delay Time RG=3.3Ω-62-ns
tfFall Time VGS=10V - 14 - ns
Ciss Input Capacitance VGS=0V - 2420 3870 pF
Coss Output Capacitance VDS=30V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF
RgGate Resistance f=1.0MHz - 2.3 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=4A, VGS=0V - - 1.5 V
trr Reverse Recovery Time2IS=4A, VGS=0V, - 430 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 6.1 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP08N60I-HF
2
AP08N60I-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
4.3
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
T j , Junction Temperature ( oC)
Normalized BVDSS (V)
0
2
4
6
8
10
12
14
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
5.0V
VG=4.0V
10V
6.0V
0
2
4
6
8
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=4.0V
4.5V
10V
5.0V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=4A
VG=10V
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 25oCTj = 150 oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( o C)
Normalized VGS(th) (V)
AP08N60I-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
4.3
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
0 20406080
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=4A
VDS =480V
0
1000
2000
3000
4000
1 5 9 13 17 21 25 29 33 37
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.01
0.1
1
10
100
0.1 1 10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
ingle Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this
area limited by
RDS(ON)
