© 2008 IXYS CORPORATION, All rights reserved DS98597H(10/08)
HiPerFETTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN24N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 100 μA
VGS = 0V TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 12A, Note 1 390 mΩ
VDSS = 1000V
ID25 = 24A
RDS(on) ≤≤
≤≤
≤ 390mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
S
G
S
D
miniBLOC, SOT-227 B
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ±20 V
VGSM Transient ± 30 V
ID25 TC= 25°C24A
IDM TC= 25°C, pulse width limited by TJM 96 A
IATC= 25°C24A
EAS TC= 25°C3J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 5 V/ns
PDTC= 25°C 568 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Avalanche rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Synchronous rectification
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
•Low voltage relays
Advantages
•Easy to mount
•Space savings
•High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN24N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 12A, Note 1 15 27 S
Ciss 8700 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 785 pF
Crss 315 pF
td(on) 35 ns
tr 35 ns
td(off) 75 ns
tf 21 ns
Qg(on) 267 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 12A 52 nC
Qgd 142 nC
RthJC 0.22 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 24 A
ISM Repetitive, pulse width limited by TJM 96 A
VSD IF = 24A, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.0 μC
IRM 8.0 A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
RG = 1Ω (External)
IF = 24A, -di/dt = 100A/μs
VR = 100V
SOT-227B Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFN24N100
Fig. 1. Outp u t C h ar acteri stics
@ 25ºC
0
4
8
12
16
20
24
0123456789
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25º C
0
5
10
15
20
25
30
35
40
45
50
55
0 3 6 9 12 15 18 21 24 27 30
V
DS
- V olt s
I
D
- A mpe re s
V
GS
= 10V
5V
6V
7V
Fi g . 3. Ou tp u t C h ar acter isti cs
@ 125ºC
0
4
8
12
16
20
24
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
5V
6V
Fig. 4. RDS(on) Normalized to ID = 12A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orm a lize d
V
GS
= 10V
I
D
= 24A
I
D
= 12A
Fig. 5. RDS(on) Normalized to ID = 12A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 5 10 15 20 25 30 35 40 45 50 55
I
D
- Amp eres
R
DS(on)
- N o rm a liz ed
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperatur e
0
4
8
12
16
20
24
28
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mp er es
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN24N100
IXYS REF: F_24N100(9X)10-17-08-C
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
3.54.04.55.05.56.06.57.0
V
GS
- V olts
I
D
- A mpe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40 45 50
I
D
- A mp ere s
g
f s
- S ieme ns
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
In t r i n si c D i o d e
0
10
20
30
40
50
60
70
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Vo lts
I
S
- A mpe re s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 30 60 90 120 150 180 210 240 270
Q
G
- NanoCoulombs
V
GS
- V o lt s
V
DS
= 500V
I
D
= 12A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m Tran sien t Th ermal
Impedance
0.010
0.100
1.000
0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
