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SWITCHING
N-CHANNEL POWER MOS FET
MOS FIELD EFFECT TRANSISTOR
NP80N04MLG, NP80N04NLG, NP80N04PLG
DATA SHEET
Document No. D19797EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
(TO-220)
(TO-262)
(TO-263)
DESCRIPTION
The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for
high current switching applications.
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
NP80N04MLG-S18-AY Note TO-220 (MP-25K) typ. 1.9 g
NP80N04NLG-S18-AY Note
Tube
50 p/tube TO-262 (MP-25SK) typ. 1.8 g
NP80N04PLG-E1B-AY Note
NP80N04PLG-E2B-AY Note
Pure Sn (Tin)
Tape
1000 p/reel TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
• Logic level
• Built-in gate protection diode
• Super low on-state resistance
- NP80N04MLG, NP80N04NLG
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PLG
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
Data Sheet D19797EJ1V0DS
2
NP80N04MLG, NP80N04NLG, NP80N04PLG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±80 A
Drain Current (pulse) Note1 ID(pulse) ±300 A
Total Power Dissipation (TC = 25°C) PT1 115 W
Total Power Dissipation (TA = 25°C) PT2 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Repetitive Avalanche Current Note2 IAR 37 A
Repetitive Avalanche Energy Note2 EAR 137 mJ
Notes 1. PW ≤ 10
μ
s, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 1.30 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W
Data Sheet D19797EJ1V0DS 3
NP80N04MLG, NP80N04NLG, NP80N04PLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250
μ
A 1.4 2.5 V
Forward Transfer Admittance Note | yfs | VDS = 5 V, ID = 35 A 25 64 S
Drain to Source On-state Resistance Note
VGS = 10 V, ID = 40 A
NP80N04MLG, NP80N04NLG
3.8 4.8 mΩ
RDS(on)1
VGS = 10 V, ID = 40 A
NP80N04PLG
3.3 4.5 mΩ
VGS = 4.5 V, ID = 35 A
NP80N04MLG, NP80N04NLG
4.9 9.0 mΩ
RDS(on)2
VGS = 4.5 V, ID = 35 A
NP80N04PLG
4.6 8.7 mΩ
Input Capacitance Ciss VDS = 25 V, 4600 6900 pF
Output Capacitance Coss VGS = 0 V, 480 720 pF
Reverse Transfer Capacitance Crss f = 1 MHz 310 560 pF
Turn-on Delay Time td(on) VDD = 20 V, ID = 40 A, 17 37 ns
Rise Time tr VGS = 10 V, 18 45 ns
Turn-off Delay Time td(off) RG = 0 Ω 74 148 ns
Fall Time tf 8 20 ns
Total Gate Charge QG VDD = 32 V, 90 135 nC
Gate to Source Charge QGS VGS = 10 V, 13 nC
Gate to Drain Charge QGD ID = 80 A 26 nC
Body Diode Forward Voltage Note VF(S-D) IF = 80 A, VGS = 0 V 0.95 1.5 V
Reverse Recovery Time trr IF = 80 A, VGS = 0 V, 39 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 39 nC
Note Pulsed test
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
μ
Data Sheet D19797EJ1V0DS
4
NP80N04MLG, NP80N04NLG, NP80N04PLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
PT - Total Power Dissipation - W
0
25
50
75
100
125
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.1
1
10
100
1000
0.1 1 10 100
I
D(DC)
I
D(pulse)
DC
T
C
= 25°C
Single Pulse
PW = 1
i
00 μs
R
DS(on)
Limited
(V
GS
= 1
i
0 V)
Secondary Brakedown Limited
1
i
m
i
s
Power Dissipation Limited
1
i
0 m
i
s
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
0.01
0.1
1
10
100
1000
Single Pulse
R
th(ch-A)
= 83.3°C/W
R
th(ch-C)
= 1.30°C/W
PW - Pulse Width - s
1 m 10 m 100 m 1 10 100 1000
Data Sheet D19797EJ1V0DS 5
NP80N04MLG, NP80N04NLG, NP80N04PLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ID - Drain Current - A
0
50
100
150
200
250
300
0 0.5 1 1.5 2
Pulsed
V
GS
= 4.5 V
10 V
NP80N04MLG, NP80N04NLG
VDS - Drain to Source Voltage - V
ID - Drain Current - A
0
50
100
150
200
250
300
0 0.5 1 1.5 2
Pulsed
V
GS
= 4.5 V
10 V
NP80N04PLG
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
ID - Drain Current - A
0.0001
0.001
0.01
0.1
1
10
100
1000
01234
V
DS
= 10 V
Pulsed
T
ch
= −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
VGS - Gate to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
0
1
2
3
-75 -25 25 75 125 175 225
VDS = VGS
ID = 250 μA
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
1
10
100
0.1 1 10 100
V
DS
= 5 V
Pulsed
T
ch
= −55°C
150°C
175°C
−25°C
25°C
75°C
125°C
ID - Drain Current - A
Data Sheet D19797EJ1V0DS
6
NP80N04MLG, NP80N04NLG, NP80N04PLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
1 10 100 1000
Pulsed
V
GS
= 4.5 V
10 V
NP80N04MLG, NP80N04NLG
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
1 10 100 1000
Pulsed
V
GS
= 4.5 V
10 V
NP80N04PLG
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
0 4 8 12 16 20
I
D
= 40
A
Pulsed
NP80N04MLG, NP80N04NLG
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
0 4 8 12 16 20
I
D
= 40
A
Pulsed
NP80N04PLG
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
-75 -25 25 75 125 175 225
V
GS
= 4.5 V, I
D
= 35
A
10 V, 40
A
Pulsed
NP80N04MLG, NP80N04NLG
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
-75 -25 25 75 125 175 225
V
GS
= 4.5 V, I
D
= 35 A
10 V, 40 A
Pulsed
NP80N04PLG
Tch - Channel Temperature - °C
Data Sheet D19797EJ1V0DS 7
NP80N04MLG, NP80N04NLG, NP80N04PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - pF
100
1000
10000
100000
0.01 0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
0.1 1 10 100
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0 Ω
t
d(off)
t
r
t
d(on)
t
f
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VDS - Drain to Source Voltage - V
0
10
20
30
40
50
0 20406080100
0
2
4
6
8
10
I
D
= 80
A
V
GS
V
DS
V
DD
= 32 V
20 V
8 V
QG - Gate Charge - nC
VDS - Drain to Source Voltage - V
IF - Diode Forward Current - A
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Pulsed
10 V
V
GS
= 0 V
4.5 V
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
trr - Reverse Recovery Time - ns
10
100
0.1 1 10 100
di/dt = 100 A/
μ
s
V
GS
= 0 V
IF - Diode Forward Current - A
Data Sheet D19797EJ1V0DS
8
NP80N04MLG, NP80N04NLG, NP80N04PLG
PACKAGE DRAWINGS (Unit: mm)
TO-220 (MP-25K) TO-262 (MP-25SK)
10.0±0.2 3.8±0.2 4.45±0.21.3±0.2
2.8±0.3
6.3±0.3
15.9 MAX.
3.1±0.2
1.27±0.2
0.8±0.1
0.5±0.2 2.5±0.2
2.54 TYP.2.54 TYP.
13.7±0.3
φ
1
423
1. Gate
2. Drain
3. Source
4. Fin (Drain)
10.0±0.2 4.45±0.21.3±0.2
8.9±0.2 1.2±0.3
10.1±0.3
3.1±0.3
1.27±0.2
0.8±0.1
0.5±0.2 2.5±0.2
2.54 TYP.2.54 TYP.
13.7±0.3
1
4
23
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-263 (MP-25ZP)
EQUIVALENT CIRCUIT
No plating
7.88 MIN.
2.54
0.75 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
2.54 ±0.25
15.25 ±0.5
1.35 ±0.3
213
4
2.5
4.45 ±0.2
1.3 ±0.2
0.6 ±0.2
0 to 8˚
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.025
to 0.25
0.25
10.0 ±0.3
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D19797EJ1V0DS 9
NP80N04MLG, NP80N04NLG, NP80N04PLG
TAPE INFORMATION (NP80N04PLG)
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Reel sideDraw-out side
−E1B TYPE −E2B TYPE
MARKING INFORMATION
80N04
Lot code
NEC
LG
Pb-free plating marking
Abbreviation of part number
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow
NP80N04PLG
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Wave soldering
NP80N04MLG,
NP80N04NLG
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
Partial heating
NP80N04MLG,
NP80N04NLG,
NP80N04PLG
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
NP80N04MLG, NP80N04NLG, NP80N04PLG
The information in this document is current as of May, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,
etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or
types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E0904E
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
