*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
TISP1072F3,TISP1082F3
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
D Package (Top View)
Device Symbol
Description
These dual forward-conducting unidirectional over-voltage
protectors are designed for the overvoltage protection of
ICs used for the SLIC (Subscriber Line Interface Circuit)
function. The IC line driver section is typically powered with
0 V and a negative supply. The TISP1xxxF3 limits voltages
that exceed these supply rails and is offered in two voltage
variants to match typical negative supply voltage values.
High voltages can occur on the line as a result of exposure
to lightning strikes and a.c. power surges. Negative tran-
sients are initially limited by breakdown clamping until the
voltage rises to the breakover level, which causes the
device to crowbar. The high crowbar holding current pre-
vents d.c. latchup as the current subsides. Positive tran-
sients are limited by diode forward conduction. These pro-
tectors are guaranteed to suppress and withstand the listed
international lightning surges on any terminal pair.
How To Order
.......................................UL Recognized Component
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current <10 A
Rated for International Surge Wave Shapes
1
2
3
45
6
7
8G
G
G
G
NC
T
R
NC
NC - No internal connection
G
TR
SD1XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
DEVICE VDRM
V
V(BO)
V
‘1072F3 - 58 - 72
‘1082F3 - 66 - 82
Waveshape Standard ITSP
A
2/10 µs GR-1089-CORE 80
8/20 µs IEC 61000-4-5 70
10/160 µs FCC Part 68 60
10/700 µsITU-T K.20/21
FCC Part 68 50
10/560 µs FCC Part 68 45
10/1000 µs GR-1089-CORE 35
Device Package Carrier
TISP1xxxF3 D, Small-outline Tape And Reeled TISP1xxxF3DR-S
Insert xxx value corresponding to protection voltages of 072 and 082
Order As
*RoHS COMPLIANT
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Description (continued)
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially
limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar
holding current helps prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These
protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control
and are virtually transparent to the system in normal operation.
Absolute Maximum Ratings, TA= 25 °C (Unless Otherwise Noted)
Electrical Characteristics for R and T Terminal Pair, TA= 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage, 0 °C < TA < 70 °C ‘1072F3
‘1082F3 VDRM -58
-66 V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM A
1/2 (Gas tube differential transient, 1/2 voltage wave shape) 120
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 80
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 50
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70
10/160 (FCC Part 68, 10/160 voltage wave shape) 60
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 55
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50
5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50
10/560 (FCC Part 68, 10/560 voltage wave shape) 45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 35
Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3)
50 Hz, 1 s ITSM 4.3 A
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs
Junction temperature TJ-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP® must be in thermal equilibrium with 0 °C < TJ<70 °C. The surge may be repeated after the TISP® returns to its
initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Parameter Test Conditions Min Typ Max Unit
IDRM Repetitive peak off-
state current VD=±VDRM, 0 °C<T
A<70°C±10 µA
IDOff-state current VD=±50 V ±10 µA
Coff Off-state capacitance
f = 100 kHz, Vd= 100 mV
VD=0
(see Note 4)
0.08 0.5 pF
NOTE 4: Further details on capacitance are given in the Applications Information section.
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Thermal Characteristics
Electrical Characteristics for T and G or R and G Terminals, TA= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
IDRM Repetitive peak off-
state current VD=V
DRM, 0 °C<T
A<70°C-10µA
V(BO) Breakover voltage dv/dt = -250 V/ms, RSOURCE = 300 Ω‘1072F3
‘1082F3
-72
-82 V
V(BO) Impulse breakover
voltage
dv/dt ≤-1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
RSOURCE =50Ω
‘1072F3
‘1082F3
-78
-92 V
I(BO) Breakover current dv/dt = -250 V/ms, RSOURCE = 300 Ω-0.1 -0.6 A
VFRM Peak forward recovery
voltage
dv/dt ≤+1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
RSOURCE =50Ω
‘1072F3
‘1082F3
3.3
3.3 V
VTOn-state voltage IT=-5A, tW= 100 µs-3V
VFOn-state voltage IT=+5A, tW= 100 µs+3V
IHHolding current IT=-5A, di/dt= +30mA/ms -0.15 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM -5 kV/µs
IDOff-state current VD=-50V -10 µA
Coff Off-state capacitance
f=1MHz, V
d=0.1V r.m.s., VD=0
f=1MHz, V
d=0.1V r.m.s., VD=-5V
f=1MHz, V
d=0.1V r.m.s., VD=-50V
(see Note 4)
‘1072F3
‘1082F3
‘1072F3
‘1082F3
‘1072F3
‘1082F3
150
130
65
55
30
25
240
240
104
104
48
48
pF
NOTE 5: Further details on capacitance are given in the Applications Information section.
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance Ptot =0.8W, T
A= 25 °C
5cm
2, FR4 PCB 160 °C/W
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-current Characteristic for Terminals R and G or T and G
-v
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Forward
Conduction
Characteristic
+v
+i
IF
VF
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAC
Figure 2. Voltage-current Characteristic for Terminals R and T
-v
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
ID
IH
IT
VT
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAA
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G or T and G Terminals
Figure 3. Figure 4.
Figure 5. Figure 6.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
0.001
0.01
0.1
1
10
100 TC1LAF
VD = -50 V
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Negative Breakdown Voltages - V
60.0
70.0
80.0
TC1LAL
V(BO)
V(BR)
V(BR)
V(BO)
V(BR)M
V(BR)M
I(BR) = 1 mA
'1072F3
'1082F3
VT - On-State Voltage - V
23456789
10
1
10
100 TC1LAC
25 °C
-40 °C
150 °C
VF - Forward Voltage - V
23456789110
IF - Forward Current - A
1
10
100 TC1LAE
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
OFF-STATE CURRENT
vs
ON-STATE VOLTAGE
FORWARD CURRENT
vs
FORWARD VOLTAGE
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
1
25 °C
40 °C
150 °C
TISP1xxxF3 Overvoltage Protector Series
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
Figure 7. Figure 8.
Figure 9. Figure 10.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
IH, I(BO) - Holding Current, Breakover Current - A
0.07
0.08
0.09
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 TC1LAD
I(BO)
IH
di/dt - Rate of Rise of Principle Current - A/µs
0.001 0.01 0.1 1 10 100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0 TC1LAG
di/dt - Rate of Rise of Principle Current - A/µs
0.001 0.01 0.1 1 10 100
VFRM - Peak Forward Recovery Voltage - V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 TC1LAH
R or T Terminal Voltage (Negative) - V
0·1 1 10
Off-State Capacitance - pF
10
100
TC1LAJ
50
'1072F3
'1082F3
200
Third Terminal = 0 to -50 V
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
PEAK FORWARD RECOVERY VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
OFF-STATE CAPACITANCE
vs
R OR T TERMINAL VOLTAGE (NEGATIVE)
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G or T and G Terminals
Figure 11. Figure 12.
Figure 13.
R or T Terminal Voltage (Positive) - V
0.01 0.1
Off-State Capacitance - pF
150
200
100
TC1LAK
0.3
'1072F3
'1082F3
Third Terminal = 0 to -50 V
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Off-State Capacitance - pF
10
100
TC1LAB
500
Terminal Bias = 0
Terminal Bias = -50 V
'1072F3
'1082F3
'1072F3
'1082F3
Third Terminal = 0 to -50 V
Decay Time - µs
10 100 1000
Maximum Surge Current - A
10
100
1000 TC1LAA
2
OFF-STATE CAPACITANCE
vs
R OR T TERMINAL VOLTAGE (POSITIVE)
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
SURGE CURRENT
vs
DECAY TIME
TISP1xxxF3 Overvoltage Protector Series
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and T Terminals
Figure 14. Figure 15.
Figure 16. Figure 17.
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
ID - Off-State Current - µA
0.001
0.01
0.1
1
10
100 TC1LAN
VD = ±50 V
-25 0 25 50 75 100 125 150
Breakdown Voltages - V
60.0
70.0
80.0
90.0 TC1LAM
I(BR) = 1 mA
'1072F3
'1082F3
V(BR)
V(BO)
V(BR)M
V(BO)
V(BR)
V(BR)M
-25 0 25 50 75 100 125 150
IH, I(BO) - Holding Current, Breakover Current - A
0.07
0.08
0.09
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 TC1LAO
I(BO)
IH
di/dt - Rate of Rise of Principle Current - A/µs
0.001 0.01 0.1 1 10 100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0 TC1LAI
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT
t - Current Duration - s
0·1 1 10 100 1000
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
1
10
vs
CURRENT DURATION
TI1LAAa
VGEN = 250 Vrms
RGEN = 10 to 150 Ω
Figure 18.
THERMAL RESPONSE
t - Power Pulse Duration - s
Figure 19.
0·0001 0·001 0·01 0·1 1 10 100 1000
ZθJA - Transient Thermal Impedance - °C/W
1
10
100
TI1MAAa
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
APPLICATIONS INFORMATION
Electrical Characteristics
The electrical characteristics of a TISP¤device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will
depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial
testers, which generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters’
temperature coefficient, the power dissipated and the thermal response curve, Zθ(see M. J. Maytum, “Transient Suppressor Dynamic
Parameters.” TI Technical Journal, vol. 6, No. 4, pp.63-70, July-August 1989).
Lightning Surge
Wave Shape Notation
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50% of the
maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 µs wave shape would
have a peak current value of 50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP¤surge current graph comprehends the
wave shapes of commonly used surges.
Generators
There are three categories of surge generator types, single wave shape, combination wave shape and circuit defined. Single wave
shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open cir-
cuit voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for
the short circuit current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually
equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open cir-
cuit voltage generator typically produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a
finite resistance, the wave shape produced is intermediate between the open circuit and short circuit values.
Current Rating
When the TISP¤device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be
defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP¤surge capability.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs open circuit voltage surge is changed to a 38 A, 5/310 µs current waveshape when
driving into a short circuit. Thus, the TISP¤surge current capability, when directly connected to the generator, will be found for the ITU-
T K.21 waveform at 310 µs on the surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value. A
1 kV open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 Ω(1000/100). If the equipment
has a series resistance of 25 Ωthen the surge current requirement of the TISP¤device becomes 29 A (1000/35) and not 100 A.
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on
the rate of current rise, di/dt, when the TISP¤device is clamping the voltage in its breakdown region. The V(BO) value under surge condi-
tions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 8.). An
estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt
is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional
series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the
TISP¤device breakdown region.
Capacitance
Off-state Capacitance
The off-state capacitance of a TISP¤device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. volt-
age, VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical
25 °C variation of capacitance value with a.c. bias is shown in Figure 21. When VD>> Vd, the capacitance value is independent on the
value of Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies.
Figure 20.
Vd - RMS AC Test Voltage - mV
1 10 100 1000
Normalized Capacitance
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05 AIXXAA
Normalized to Vd = 100 mV
DC Bias, VD = 0
NORMALIZED CAPACITANCE
vs
RMS AC TEST VOLTAGE
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
APPLICATIONS INFORMATION
Longitudinal Balance
Figure 21 shows a three terminal TISP¤device with its equivalent “delta” capacitance. Each capacitance, CTG, CRG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than
wire T, then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The
line capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive
unbalance effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via
the third terminal is included.
Figure 21.
CTG
CRG
CTR
Equipment
T
R
G
(CTG-CRG)
CRG
CTR
Equipment
T
R
G
CRG
CTG > CRG Equivalent Unbalance
AIXXAB
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
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