Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 1 of 10 June 2005
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
Product Features
x 2300 – 2700 MHz
x +32 dBm P1dB
x +46 dBm Output IP3
x 10 dB Gain @ 2450 MHz
x 9.5 dB Gain @ 2650 MHz
x Single Positive Supply (+5V)
x Available in 16pin 4mm QFN
and Lead-free/green/RoHS-
compliant SOIC-8 packages
Applications
x W-LAN / Wi-Bro
x RFID
x DMB
x Fixed Wireless
Product Description
The ECP203 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +32 dBm of compressed 1dB power. It is
housed in a 16-pin 4x4mm QFN and Lead-free/
green/RoHS-compliant SOIC-8 SMT packages. All
devices are 100% RF and DC tested.
The ECP203 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP203 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications. The
device can also be used in next generation RFID readers.
Functional Diagram
ECP203D
ECP203G / ECP203G-G
Specifications (1)
Parameter Units
Min Typ Max
Operational Bandwidth MHz 2300 2700
Test Frequency MHz 2450
Gain dB 9 10
Input Return Loss dB 8.5
Output Return Loss dB 8.5
Output P1dB dBm 31 +32
Output IP3 (2) dBm +46
Noise Figure dB 6.3
Test Frequency MHz 2650
Gain dB 9.5
Output P1dB dBm +32
Output IP3 (2) dBm +46
Operating Current Range, Icc (3)
mA 700 800 900
Device Voltage, Vcc V +5
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
the Vbias and RF out pins. It is expected that the current can increase by an additional 200 mA
at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that
Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15
. (ie. total
device current typically will be 822 mA.)
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 qC
Storage Temperature -65 to +125 qC
RF Input Power (continuous) +28 dBm
Device Voltage +8 V
Device Current 1400 mA
Device Power 8 W
Junction Temperature +250 qC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameter Units Typical
Frequency MHz 2350 2450 2650
S21 – Gain dB 10 10 9.5
S11 dB -8 -8.5 -19.5
S22 dB -15.5 -8.5 -11.5
Output P1dB dBm 32 32 32
Output IP3 dBm 47 46 46
Noise Figure dB 6.3 6.3 6.3
Supply Bias (3) +5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25
C.
Ordering Information
Part No. Description
ECP203D 2 Watt InGaP HBT Amplifier
(lead-tin 16p 4x4mm Pkg)
ECP203G* 2 Watt InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
ECP203G-G 2 Watt InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
ECP203D-PCB2450 2450 MHz Evaluation Board
ECP203D-PCB2650 2650 MHz Evaluation Board
ECP203G-PCB2450 2450 MHz Evaluation Board
ECP203G-PCB2650 2650 MHz Evaluation Board
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
1
2
3
4
8
7
6
5
GND
RF IN
GND
Vbias
RF OUT
RF OUT
GND
3
4
10
9
14
13
7
8
RF OUT
Gnd
RF IN