2N4400 / MMBT4400
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Co llector-Emitter Vol t age 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous600 mA
TJ, Tstg Operating and Stora ge Junction Tempe rature Ra nge -55 to +150 °C
Symbol Characteristic Max Units
2N4400 *MMBT4400
PDTotal D evice Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Therm al Resistance, Junction to C ase 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
C
B
E
SOT-23
Mark: 83
MMBT4400
2N4400
CBETO-92
2001 Fairchild Semiconductor Corporation 2N4400/MMBT4400, Rev A
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Bre akdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakd own Voltage IC = 100 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 6.0 V
ICEX Collecto r Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
IBL Emitter Cutoff Current V CE = 35 V, VEB = 0.4 V 0.1 µA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 150 mA
VCE = 2.0 V, IC = 500 mA
20
40
50
20 150
VCE(sat)Colle ctor-Emitter Sa turation Voltage IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA 0.40
0.75 V
V
VBE(sat)Base-Emitte r Saturation Voltage IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA 0.75 0.95
1.2 V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Ca pacitance VCB = 5.0 V, f = 140 kHz 6.5 pF
Cib Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF
hfe Small-Signal Current Gain IC = 20 mA, VCE = 10 V,
f = 100 MHz 2.0
hfe Small-Signal Current Gain VCE = 10 V, IC = 1.0 mA, 20 250
hie Input Impedance f = 1.0 kHz 0.5 7.5 KΩ
hre Voltage Feedback Ratio 0.1 8.0 x 10-4
hoe Output Admittance 1.0 30 µmhos
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
tdDelay TimeVCC = 30 V, IC = 150 mA,15ns
trRise Time IB1 = 15 mA ,VEB = 2 V
tsStorage Time VCC = 30 V, IC = 150 mA 225 ns
tfFa ll Time IB1 = IB2 = 15 mA 30 ns
20 ns
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Curr e nt
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURREN T GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Co l lec to r- Emitter Satu r at ion
Vol t age vs Co ll ect or Cur r ent
110100500
0.1
0.2
0.3
0.4
I - COLL ECTO R CU RR ENT (mA)
V - COL LE C TOR-E MI TTER VOLT A GE (V )
CESAT
25 °C
C
β= 10
125 °C
- 40 °C
B a se-Emitte r Sa turation
Volta ge vs Co ll ector Cu r rent
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT ( mA)
V - BASE- E MITTER VO LTAG E (V)
BESAT
C
β= 1 0
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltage vs
Collector Cu rrent
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temp erature
25 50 75 100 125 150
0.1
1
10
100
500
T - AM BIENT T E M PERATU RE ( C)
I - C OLLECT OR CURRENT (nA)
A
V = 40V
CB
CBO
°
Emitter Transition and Output
Capacitance vs Reverse Bias Vol tage
0.1 1 10 100
4
8
12
16
20
RE VERSE BIAS V OLTAGE (V)
CAP ACITANCE (pF)
f = 1 MHz
Cob
C
NPN General Purpose Amplifier
te
(continued)
2N4400 / MMBT4400
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Turn On and T ur n Off Ti mes
vs Collecto r Curren t
10 100 1000
0
80
160
240
320
400
I - COLLEC TO R CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 25 V
cc
S wi t ching Times
vs Col lecto r C urr ent
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 25 V
cc
tf
td
NPN General Purpose Amplifier
(continued)
2N4400 / MMBT4400
Typical Common Emitter Characteristics (f = 1.0kHz)
Commo n Emit te r Cha racteri st ics
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
Comm o n Emit te r C h aract erist ics
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AMBI ENT TEMPERATURE ( C)
CHAR. RE LATIVE TO VALUES AT T = 25 C
V = 1 0 V
CE
A
A
I = 1 0 mA
C
hoe
hre
hfe
hie
o
o
Common Emit ter C h aracteristics
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLL ECTO R VOLTAGE ( V)
CHAR. RELATIVE TO VALUES AT V = 10V
CE
CE
T = 25 C
A o
hoe
h re
h fe
hie
I = 10 mA
C
NPN General Purpose Amplifier
(continued)
2N4400 / MMBT4400
Test Circuits
30 V
1.0 KΩΩ
ΩΩ
Ω
16 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
500 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
37 ΩΩ
ΩΩ
Ω
- 1.5 V
1.0 KΩΩ
ΩΩ
Ω
6.0 V
0
30 V
FIGURE 1: Saturated Turn-On Switching Timer
NOTE: BV = 5.0 V
FIGURE 2: Saturated Turn-Off Switching Time
EBO 1k
NPN General Purpose Amplifier
(continued)
2N4400 / MMBT4400
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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