Document Number: 88617 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Surface Mount Glass Passivated Rectifier
GF1A thru GF1M
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM 30 A
VF1.1 V, 1.2 V
IR5.0 μA
TJ max. 175 °C
DO-214BA (GF1)
SUPERECTIFIER®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Device marking code GA GB GD GG GJ GK GM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 30 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88617
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GF1A thru GF1M
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Maximum instantaneous
forward voltage 1.0 A VF1.1 1.2 V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 125 °C 50
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 2.0 μs
Typical junction capacitance 4.0 V, 1 MHz CJ15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Typical thermal resistance (1) RJA 80
°C/W
RJL 26
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GF1J-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel
GF1J-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel
GF1JHE3/67A (1) 0.104 67A 1500 7" diameter plastic tape and reel
GF1JHE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel
0
100 130110 120 140 150 160 180
0.50
1.00
60 Hz Resistive or Inductive Load
Lead Temperature (°C)
1.25
0.75
0.25
170
Average Forward Rectified Current (A)
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
15
20
25
10
5
30
1100
10
Number of Cycles at 60 Hz
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
Document Number: 88617 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GF1A thru GF1M
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10
1
0.1
0.01
0.4 0.6 1.4 1.60.8 1.0 1.2
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.1
1
10
0.01
200 10040 60 80
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
1100
10
30
1
10
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 100
10
100
0.1
0.1 1 10
1
Mounted on
0.2" x 0.27" (5.0 mm x 7.0 mm)
Copper Pad Areas
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118 (3.00)
0.040 (1.02)
0.066 (1.68)
0.098 (2.49)
0.108 (2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 (1.93)
MAX.
0.220 (5.58)
REF.
0.060 (1.52)
MIN.
Mounting Pad Layout
Cathode Band
0.066 (1.68)
MIN.
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Revision: 12-Mar-12 1Document Number: 91000
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