J211_D74Z - ON SEMICONDUCTOR - Datasheet.Directory

J211 / MMBFJ211 — N-Channel RF Amplifier

Publication Order Number:

J211-D74Z/D

September-2017, Rev. 2

J211 / MMBFJ211

N-Channel RF Amplifier

Ordering Information

Figure 1. J211 Device Package Figure 2. MMBFJ211 Device Package

Part Number Top Mark Package Packing Method

J211-D74Z J211 TO-92 3L Ammo

MMBFJ211 62W SOT-23 3L Tape and Reel

1. Drain

123123

Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel

Ammo Packing

2. Source

3. Gate

SOT-23

Note: Source & Drain

are interchangeable

Description

This device is designed for HF/VHF mixer/amplifier

and applications where process 50 is not adequate.

Sufficient gain and low-noise for sensitive receivers.

Sourced from process 90.

J211 / MMBFJ211 — N-Channel RF Amplifier

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Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating co nd iti ons an d s tres si ng the part s to the se lev el s i s n ot re co mme nde d. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty-cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width ≤ 300 μs

Symbol Parameter Value Unit

VDG Drain-Gate Voltage 25 V

VGS Gate-Source Voltage -25 V

IGF Forward Gate Current 10 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C

Symbol Parameter Max. Unit

J211(3) MMBFJ211(3)

PDTotal Device Dis sipation 350 225 mW

Derate Above 25°C 2.8 1.8 mW/°C

RθJC Thermal Resistance, Junction-to-Case 125 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 357 556 °C/W

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 -25 V

IGSS Gate Reverse Current VGS = 15 V, VDS = 0 -100 pA

VGS(off) Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 nA -2.5 -4.5 V

On Characteristics

IDSS Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0 7.0 20 mA

Small Signal Characteristics

gfs Common Source Forward

Transconductance VDS = 15 V, VGS = 0,

f = 1.0 kHz 7000 12000 μmhos

goss Common Source Output

Conductance VDS = 15 V, VGS = 0,

f = 1.0 kHz 200 μmhos

J211 / MMBFJ211 — N-Channel RF Amplifier

Typical Performance Characteristics

Figure 3. Parameter Interactions Figure 4. Common Drain-Source

Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics

Figure 7. Leakage Current vs. Voltage Figure 8. Noise Voltage vs. Frequency

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J211 / MMBFJ211 — N-Channel RF Amplifier

Typical Performance Characteristics (Continued)

Figure 9. Transconductance vs. Drain Current Figure 10. Output Conductance vs. Drain Current

Figure 11. Capacitance vs. Voltage

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J211 / MMBFJ211 — N-Channel RF Amplifier

Common Source Characteristics

Figure 12. Input Admittance Figure 13. Forward Transadmittance

Figure 14. Output Admit tance Figure 15. Reverse Transadmittance

os)

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J211 / MMBFJ211 — N-Channel RF Amplifier

Common Gate Characteristics

Figure 16. Input Admittance Figure 17. Forward Transadmittance

Figure 18. Output Admittance Figure 19. Reverse Transadmittance

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J211 / MMBFJ211 — N-Channel RF Amplifier

Physical Dimensions

Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form

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J211 / MMBFJ211 — N-Channel RF Amplifier

Physical Dimensions (Continued)

Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

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