Feb.1999
B
2
X
30
14 3-M6
B
2
X
23.5
85 85
93
108
23 23
B
1
X
C
2
E
1
7.5
18 518518 Tab#110, t=0.5
16
30
7
C
2
E
1
B
1
X
E
2
B
2
E
2
C
1
E
1
B
1
LABEL
615 6
48
62
B
1
E
1
B
2
E
2
E
2
C
1
φ6.5
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM200DY-HB
•ICCollector current ........................ 200A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain.............................750
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
600
600
600
7
200
200
1240
12
2000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
470
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=200A, IB=260A
–IC=200A (diode forward voltage)
IC=200A, VCE=2.5V
VCC=300V, IC=200A, IB1=400mA, –IB2=4A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
200
2.5
3.0
1.8
—
2.5
10
2.0
0.1
0.33
0.075
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
–1
10
–2
10
–1
10
1
10
7
5
4
3
3
3
2
2
0
10
7
5
4
1
10 23457 2
10 23457 3
10
IB=260mA
VBE(sat)
VCE(sat)
Tj=25°C
Tj=125°C
500
400
300
200
100
001 23 45
Tj=25°C
I
B
=500mA
I
B
=260mA
I
B
=100mA
I
B
=1A
I
B
=50mA
7
5
4
3
3
2
0
10
7
5
4
3
2
2.2 4.23.83.43.02.6
VCE=2.5V
Tj=25°C
7532
7
5
4
3
2
VCE=2.5V
Tj=25°C
Tj=125°C
2
10
3
10
7
5
4
3
2
4
10
1
10 2
10
47532 3
10
4
VCE=5.0V
753275327532
5
4
3
2
1
0
Tj=25°C
Tj=125°C
444
IC=300A
IC=100A
IC=200A
0
10 1
10
–1
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
23457 2
10
1
10 23457 3
10
ts
tf
ton
Tj=25°C
Tj=125°C
VCC=300V
IB1=400mA
IB2=–4A
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
–1
10
–2
10
–3
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
400
00 200 400 600 800100 300 500 700
300
200
100
350
250
150
50
T
j
=125°C
I
B2
=–10A
I
B2
=–3.5A
1
10
7
5
4
3
2
0
10
23457
1
10
0
10
7
5
4
3
3
2
2
t
s
t
f
3457
2
10
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
C
=200A
I
B1
=400mA
753275327532
7
5
3
2
7
5
3
2
7
5
3
2T
C
=25°C
DC
2
10
3
10
1
10
0
10
3
10
2
10
1
10
0
10
444
1ms
10ms
100µs
50µs
500µs
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0.4 2.42.01.61.20.8
T
j
=25°C
T
j
=125°C
1
10
753275327532
0.10
0.08
0.06
0.04
0.02
0.09
0.07
0.03
0.01
0
7532
1
10
0
10
0
10
444
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
0.05
Feb.1999
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
–3
10 –2
10 –1
10
7543275432
0
400
800
1200
1600
2000
0
10 1
10 2
10
753275327532
0.40
0.32
0.24
0.16
0.08
0
7532 1
10
0
10
0
10
444
42
3
7532
3
3
2
7
5
3
2
4
7
5
3
4
475324
2
10
1
10
1
10 2
10 3
10
–1
10
0
10
Tj=25°C
Tj=125°C
VCC=300V
IB1=400mA
IB2=–4A
Qrr
Irr
trr
