VS-20ETF..SPbF Series
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Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-20ETF..SPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-263AB (D2PAK)
IF(AV) 20 A
VR200 V, 400 V, 600 V
VF at IF1.3 V
IFSM 300 A
trr 60 ns
TJ max. 150 °C
Diode variation Single die
Snap factor 0.6
Base
cathode
+
2
13
Anode --
Anode
1
2
3
TO-263AB (D2PAK)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 20 A
VRRM 200 to 600 V
IFSM 300 A
VF10 A, TJ = 25 °C 1.2 V
trr 1 A, 100 A/μs 60 ns
TJRange -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-20ETF02SPbF 200 300
5VS-20ETF04SPbF 400 500
VS-20ETF06SPbF 600 700
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 97 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 316 A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s
VS-20ETF..SPbF Series
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Revision: 11-Feb-16 2Document Number: 94097
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Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM
20 A, TJ = 25 °C 1.30 V
60 A, TJ = 25 °C 1.67
Forward slope resistance rt12.5 m
Threshold voltage VF(TO) TJ = 150 °C 0.9 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 5.0
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 20 Apk
100 A/μs
25 °C
160 ns
Reverse recovery current Irr 10 A
Reverse recovery charge Qrr 1.25 μC
Snap factor S Typical 0.6
IFM trr
dir
dt
IRM(REC)
Qrr
t
tatb
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.9
°C/W
Maximum thermal resistance
junction to ambient (PCB mount) RthJA (1) 40
Soldering temperature TS260 °C
Approximate weight 2g
0.07 oz.
Marking device Case style TO-263AB (D2PAK)
20ETF02S
20ETF04S
20ETF06S
VS-20ETF..SPbF Series
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
80
70
150
06
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
4
28
100
10 22
120
90
130
110
30° 60° 90° 120° 180°
Conduction angle
20ETF.. Series
RthJC (DC) = 0.9 K/W
12 14 16 18 20
140
Ø
90
80
150
025
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
15
530
110
35
120
100
10 20
130
140
20ETF.. Series
RthJC (DC) = 0.9 K/W
Ø
Conduction period
30°
60°
90°
120°
180° DC
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
25
25
30
20
10 155
5
15
180°
120°
90°
60°
30°
RMS limit
20ETF.. Series
TJ = 150 °C
Conduction angle
Ø
10
0
45
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
30
25
35
35
15
10 205 15 25
20ETF.. Series
TJ = 150 °C
Ø
Conduction period
RMS limit
180°
120°
90°
60°
30°
DC
5
20
30
40
300
50
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20ETF.. Series
450
150
50
0.001 0.01 1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
550
Maximum non-repetitive surge current
versus pulse train duration.
20ETF.. Series
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
0.1
500
400
VS-20ETF..SPbF Series
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
1000
10
1
012 5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
100
34
20ETF.. Series
TJ = 25 °C
TJ = 150 °C
0.20
0.15
0
0 200 400 600 800 1000
trr - Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.05
0.10
20ETF.. Series
TJ = 25 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
4.0
0
0 200 400 600 800 1000
Qrr - Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.5
2.0
1.0
3.0
1.5
2.5
3.5
20ETF.. Series
TJ = 25 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
5
3
0
0 200 400 600 800 1000
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
2
4
20ETF.. Series
TJ = 150 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
6
7
8
9
10
70
30
0
0 200 400 600 800 1000
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
10
20
50
40
60
20ETF.. Series
TJ = 25 °C IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
VS-20ETF..SPbF Series
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Revision: 11-Feb-16 5Document Number: 94097
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Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Fig. 14 - Thermal Impedance ZthJC Characteristics
100
60
0
0 200 400 600 800 1000
Irr - Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
20
40
80
20ETF.. Series
TJ = 150 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.01
1
10
10.0001 0.001 0.01 0.1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (K/W)
0.1 Single pulse
20ETF.. Series
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-20ETF..SPbF Series
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Revision: 11-Feb-16 6Document Number: 94097
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20ETF02SPbF 50 1000 Antistatic plastic tubes
VS-20ETF02STRRPbF 800 800 13" diameter reel
VS-20ETF02STRLPbF 800 800 13" diameter reel
VS-20ETF04SPbF 50 1000 Antistatic plastic tubes
VS-20ETF04STRRPbF 800 800 13" diameter reel
VS-20ETF04STRLPbF 800 800 13" diameter reel
VS-20ETF06SPbF 50 1000 Antistatic plastic tubes
VS-20ETF06STRRPbF 800 800 13" diameter reel
VS-20ETF06STRLPbF 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
2- Current rating (20 = 20 A)
3- Circuit configuration:
E = single diode
4- Package:
T = TO-220
5- Type of silicon:
F = fast soft recovery rectifier
6- Voltage code x 100 = VRRM
7- S = D2PAK
- PbF = lead (Pb)-free
8- None = tube
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9
02 = 200 V
04 = 400 V
06 = 600 V
1-Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 20 E T F 06 S TRL PbF
Outline Dimensions
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Revision: 08-Jul-15 1Document Number: 95046
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D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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