AUIRFR4105Z
AUIRFU4105Z
VDSS 55V
RDS(on) max. 24.5m
ID 30A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2015-12-1
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 30
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 21
IDM Pulsed Drain Current 120
PD @TC = 25°C Maximum Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 29
mJ
EAS (Tested) Single Pulse Avalanche Energy Tested Value 46
IAR Avalanche Current See Fig.15,16, 12a, 12b A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 3.12
°C/W
RJA Junction-to-Ambient ( PCB Mount) ––– 50
RJA Junction-to-Ambient ––– 110
D-Pak
AUIRFR4105Z
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRFU4105Z I-Pak Tube 75 AUIRFU4105Z
AUIRFR4105ZTube 75 AUIRFR4105Z
Tape and Reel Left 3000 AUIRFR4105ZTRL
D-Pak
G D S
Gate Drain Source
S
G
D
HEXFET® Power MOSFET
G
I-Pak
AUIRFU4105Z
S
D
D
AUIRFR/U4105Z
2 2015-12-1
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 18A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 18A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 19 24.5 m VGS = 10V, ID = 18A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 16 ––– ––– S VDS = 15V, ID = 18A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 55V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 18 27
nC
ID = 18A
Qgs Gate-to-Source Charge ––– 5.3 ––– VDS = 44V
Qgd Gate-to-Drain Charge ––– 7.0 ––– VGS = 10V
td(on) Turn-On Delay Time ––– 10 –––
ns
VDD = 28V
tr Rise Time ––– 40 ––– ID = 18A
td(off) Turn-Off Delay Time ––– 26 ––– RG = 24.5
tf Fall Time ––– 24 ––– VGS = 10V
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 740 –––
pF
VGS = 0V
Coss Output Capacitance ––– 140 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 74 ––– ƒ = 1.0MHz
Coss Output Capacitance ––– 450 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss Output Capacitance ––– 110 ––– VGS = 0V, VDS = 44V ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 180 ––– VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 30
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 120 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 18A, VGS = 0V
trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C ,IF = 18A, VDD = 28V
Qrr Reverse Recovery Charge ––– 14 21 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRFR/U4105Z
3 2015-12-1
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Trans conductance
Vs. Drain Current
Fig. 1 Typical Output Characteristics
0 1 10 100
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 1 10 100
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
45678910
VGS, Gate-to-Source Voltage (V)
0
1
10
100
1000
ID, Drain-to-Source Current )
VDS = 25V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0 10203040
ID, Drain-to-Source Current (A)
0
5
10
15
20
25
30
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 8.0V
380µs PULSE WIDTH
AUIRFR/U4105Z
4 2015-12-1
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 5 10 15 20 25 30
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 18A
FOR TEST CIRCUIT
SEE FIGURE 13
0.00.51.01.52.0
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
AUIRFR/U4105Z
5 2015-12-1
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
TJ , Junction Temperature (°C)
0
5
10
15
20
25
30
ID , Drain Current (A)
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 18A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
1.100 0.000174
0.418 0.007193
1.601 0.000552
AUIRFR/U4105Z
6 2015-12-1
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 14. Threshold Voltage Vs. Temperature
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 250µA
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
20
40
60
80
100
120
EAS, Single Pulse Avalanche Energy (mJ)
I
D
TOP 2.0A
3.5A
BOTTOM 18A
ID
AUIRFR/U4105Z
7 2015-12-1
Fig 15. Typical Avalanche Current Vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
5
10
15
20
25
30
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 18A
AUIRFR/U4105Z
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms
AUIRFR/U4105Z
9 2015-12-1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUFR4105Z
Lot Code
Part Number
IR Logo
D-Pak (TO-252AA) Part Marking Information
AUIRFR/U4105Z
10 2015-12-1
I-Pak (TO-251AA) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUFU4105Z
Lot Code
Part Number
IR Logo
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFR/U4105Z
11 2015-12-1
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
AUIRFR/U4105Z
12 2015-12-1
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D-Pak
I-Pak
ESD
Machine Model Class M2 (+/-200V)†
AEC-Q101-002
Human Body Model Class H1A (+/-500V)†
AEC-Q101-001
Charged Device Model Class C5 (+/-1125V)†
AEC-Q101-005
RoHS Compliant Yes
MSL1
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
12/1/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
† Highest passing voltage.
