© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 8 1Publication Order Number:
NJD2873T4/D
NJD2873T4
Plastic Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
•Pb−Free Package is Available
•High DC Current Gain −
hFE = 120 (Min) @ IC = 500 mA
= 40 (Min) @ IC = 2 A
•Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A
•High Current−Gain − Bandwidth Product −
fT = 65 MHz (Min) @ IC = 100 mA
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Base Voltage VCB 50 Vdc
Collector−Emitter Voltage VCEO 50 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current Continuous
Peak IC2
3Adc
Base Current IB0.4 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD15
0.1 W
W/°C
Total Device Dissipation @ TA = 25°C*
Derate above 25°CPD1.68
0.011 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance Junction−to−Case
Junction−to−Ambient* RqJC
RqJA 10
89.3 °C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
Device Package Shipping†
ORDERING INFORMATION
NJD2873 DPAK 75 Units / Rail
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NJD2873G DPAK
(Pb−Free) 75 Units / Rail
MARKING
DIAGRAM
Y = Year
WW = Work Week
G = Pb−Free Device
DPAK
CASE 369C
STYLE 1
YWW
J
2873G
123
4
http://onsemi.com
NJD2873RL DPAK 1800 Units / Ree
l
NJD2873RLG DPAK
(Pb−Free) 1800 Units / Ree
l
NJD2873T4 DPAK 2500 Units / Ree
l
NJD2873T4G DPAK
(Pb−Free) 2500 Units / Ree
l
NJD2873T4
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0) VCEO(sus) 50 − Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0) ICBO − 100 nAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 100 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 0.5 A, VCE = 2 V)
(IC = 2 Adc, VCE = 2 Vdc)
(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C)
hFE 120
40
80
360
−
360
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1 A, IB = 0.05 A) VCE(sat) − 0.3 Vdc
Base−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 Adc) VBE(sat) − 1.2 Vdc
Base−Emitter On Voltage (Note 1)
(IC = 1 Adc, VCE = 2 Vdc)
(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C)
VBE(on) −
−1.2
0.95
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT65 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − 80 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
2. fT = ⎪hfe⎪• ftest.
NJD2873T4
http://onsemi.com
3
TYPICAL CHARACTERISTICS
−40°C
0.4
0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
Ic/Ib = 20
−40°C
1.2
0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS)
VBE(sat), BASE−EMITTER SATURATION
VOLTAGE (V)
100°C
25°C
Ic/Ib = 20
1.0
0.8
0.6
0.4
0.2
−40°C
100
1000
0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
100°C
VCE = 2.0 V
10
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
050 75 100 125 150
15
10
5
20
PD, POWER DISSIPATION (WATTS)
Figure 2. DC Current Gain Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage
25°C
150°C
175°C
25°C
100°C
150°C
175°C
175°C
150°C
−40°C
IC, COLLECTOR CURRENT (AMPS)
VBE(on), BASE−EMITTER VOLTAGE (V)
100°C
25°C
VCE = 2.0 V
175°C
150°C
0.3
0.2
0.1
0
1.1
0.9
0.7
0.5
0.3
1.2
1.0
0.8
0.6
0.4
0.2
1.1
0.9
0.7
0.5
0.3
0.01 0.1 1 10
175 2000
NJD2873T4
http://onsemi.com
4
t, TIME (ms)
0.01
0.02 0.05 1 2 5 10 20 50 100 2000.1 0.50.2
1
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
RESISTANCE (NORMALIZED)
Figure 6. Thermal Response
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
NJD2873T4
http://onsemi.com
5
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T− SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244 3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
NJD2873T4/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
