SCHOTTKY DIE SPECIFICATION TYPE: SB140T
40 V 1 A Standard VF Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.51 Volt
IR MAX 0.09 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM um
2
Mil
2
A830 32.67
B730 28.74
C750 29.52
D254 10.00
305 12.00
Operating Junction Temperature
Storage Temperature
ITEM
Die Size
DICE OUTLINE DRAWING
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
@ VR= 40 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
General Description:
30
-65 to +150
-65 to +150
0.55 @ 1 Ampere, Ta=25°C
Maximum Instantaneous Reverse Voltage
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Max)
0.5
110
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Micro-Electro-Magnetical Tech Co.
Spec. Limit
40
1
B
C
A
Top-side Metal
DSiO2 Passivation
P+ Guard Ring
Back-side Metal
