Ordering number:EN1057B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features Package Dimensions * Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim. * High breakdown voltage (VCEO160V). * Small output capacitance. unit:mm 2018A [2SA1257/2SC3143] Switching Time Test Circuit ( ) : 2SA1257 Specifications C : Collector B : Base E : Emitter IC=10IB1=-10IB2=10mA (For PNP, the polarity is reversed) Unit (resistance : , capacitance : F) SANYO : CP Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (-)180 V (-)160 V VEBO IC (-)5 V (-)80 mA Collector Current Pulse ICP (-)150 mA Collector Dissipation 200 mW Junction Temperature PC Tj 125 C Storage Temperature Tstg -55 to +125 C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)120V, IE=0 (-)0.1 A Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)0.1 A DC Current Gain VCE=(-)5V, IC=(-)10mA Gain-Bandwidth Product hFE fT Output Capacitance Cob VCB=(-)10V, f=1MHz Base-to-Emitter Voltage 60* VCE=(-)10V, IC=(-)10mA VBE VCE=(-)5V, IC=(-)10mA VCE(sat) IC=(-)30mA, IB=(-)3mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time IE=(-)10A, IC=0 270* (130) 150 (2.4) 2.0 MHz (3.2) 2.8 (-)1.5 pF (-)0.7 V (-)180 V (-)160 V (-)5 See specified Test Circuit V V (0.15) 0.18 (0.95) 1.00 (0.15) 0.20 s s s * : The 2SA1257/2SC3143 are classified by 10mA hFE as follows : 60 G3 120 90 G4 180 135 G5 270 Marking 2SA1257 : G, 2SC3143 : K, hFE rank : 3, 4, 5 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/7148MO/3187AT/D103KI, MT No.1057-1/4 2SA1257/2SC3143 No.1057-2/4 2SA1257/2SC3143 No.1057-3/4 2SA1257/2SC3143 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice. PS No.1057-4/4