—— —
~- L-,:r$’z c’ .- .. ..- ., ,-, -, /-,, .:, -,,-. =.7
,:$, ,-L: ;-: ,~J&._,!:,
;::’,: :: ~: :-; :;),: ~,;;:. ,--.;- ..,..-.3 .,.; .,- -. -,
Select from Epi5ase and~or Unibase (single diffused) transistors
for ultimate circuit performance based on the dejign requirements.
EPIBASEA- Designed forpowerarnplifier anl~ switching applications.
.; Low Collector-Emitter Saturation Voltage –
VCE(~at) =1.0 Vdc (Max) @IC =15 Adc -- ~lJ3771
=0.8 Vdc (!tiax) @IC =10Adc -- IMJ3772
=0.7 Vdc (Idax) @IC =8.0 Adc -MJ6257
~~ Low Leakage –
ICBO =1.0 mAdc (:M~x) @Rated VCB
~High Current-Gain -- Bandwidth Product –
fT=2. OMHz (Min) @I Ic= l.OAdc
UN IBASEA (Single Diffused) -- Designed for series pass regulators
arid inductive switching applications.
:Forward Biased Second i3reakdowrr Current Capability
lS/b =3.75 Adc (@ \/CE =40 Vdc –2N3771
=2.5 Adc (2 \~CE =60 Vdc –2N3772 ,>,.7.,’.)
=3.75 Adc @\jCE =40 Vdc –2N6257 ,,0 .?}
~>J>-
~.::,.,
,>$:~ .,,
)Reverse Biased Secold Breakdown Energ~/ —,:W’.t$:ti,
ES/b =500 mJ (Min) @IC =5. OAdc, L=40 ml+ ~,x\l.,,<,,~~V?*P
~:,t.I.;,,.*,
,. .
—— —... $i.i.. <i
,
IT:, CASE TEMPERATURE (°C)
I—— _—
~Trademark of Motorola Inc.
.—— –A—l c
*’—I II
2. EIIJ!TTER
G,43E CC LLEC-OR
lA’
E
e
39.37 -1,550
B- 2i 08 0.830
c~.6.35 162 O,zzo 0.300
al 0.99 109 0.03s 0.043
1+ ,,;O 3;::; ,;fi++;
E
G-i067 11.18 0470 0.440
t} 5,33 579 0.210 0.220
J116.64 17.15 0855 0.675
~j~18 12.19 0.440 0.480
Ia3,8.4 :6.09 IO.K-l 0161
p~
*, 2667 I?050
C[]llertor collnecte: to case
CASE 11
—-——
@MOTCROLA lkC ,?972 DS 3~29 R2
I I
I I
2N6257 M.
.—
Collector-Emitter Sustaining Voltage I‘CEX(SUS)
(Ic =0.2 Adc, VEB (off) =1.5 Vdc, 2N3771 MJ3771
RBE =1000hms) 2N3772 MJ3772
2N6257 M.
Collector-Emitter Sustain ing Voltage
I
VCER(S”~)
(Ic =0.2 Adc, RBE =1000hms) 2N3771 MJ3771
2N3772
2N6257
COlIector Cutoff Current
(VCE =30 Vdc, iB =O) ,Ltu
2N3771 MJ3771
(VCE =50 Vdc, IB =0} 2N3772 MJ3772 IIii -14+~,
(VCE=25 Vdc, IB=0)
—
2N6257 MJ6257
COl Iector Cutoff Current 1CEX
-11’
-
(VCE =50 Vdc, vEB(Off) =1.5 Vdc) 2N3771 MJ3771
(VCE =100 Vdc, vEB(Off) =1.5 Vdc)
—:?.0
2N3772 d>i ‘“ 1,0
MJ3772 ,<%<–Y$@y 1:0
(VCE =45 Vdc, vEB(Off) =1.5 Vdc) tj.O
2N6257 MJ6257 —,!.0 $. .*,, -1,0
(vc~=30 Vdc, vEB(off) =1.5 Vdc, 2N3771 ‘t!’ ,>:l?{~l>
MJ3771 —
Tc =1500C) Jp’:?<&,’ ~–2.0
2N3772 MJ3772 ,\W”.. ‘~,~s,
(VrG =45 Vdc. Vra{-++i =1.5 Vdc
—mm
2N6757 MIG7G7
*ELECTRICAL CHAR ACTERISTI(;S (Tc =25°C unless otherwise noted)
Characteristi~ Unibase IEpibase JSymbol
OFF CHARACTERISTICS I=:U=J ‘n ~!’ ‘ax ~(Unit ‘j
Collector-Emitter Sustaining Voltage vcEO(S”~)
(fC=0.2AdC, lB=O) 2N3771 MJ3771 ;--~-”
2N3772 M,
1Vdc I
—,
T;: 1500C) ‘-’-’” ~_. ---
Collector Cutoff Current iCBO I
(VCB
=50 Vdc, IE =0)
‘~., I
2N3771 ,...
MJ3771
I2N6257
iMJ6257
(VCR =100 Vdc, IF =01 2N3772 MJ3772 !
-- II
Emitter Cutoff Current
(VBE =5.0 Vdc, IC =0) ILu,
2N3771 MJ3771
(VBE =7.0 Vdc, IC =O) —— E_
15
15
15
5.0
5.0
5.0
—
—
—
—
—
—
—
—
—
*indicates JE LEC Registered Data for 2N3771, 2N3772 a“d 2N6257.
.
—
.- -—. —-——
,.
UN IBASE EPIBASE
2N3771 ,2N3772, 2N6257 MJ3771 ,MJ3772, MJ6257
FIGURE 10– DC
g30
~20
.L
10
7.0
5.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
Ic, COLLECTOR CURRENT (AMP)
FIGURE 1! –CO LLECT(
FIGURE 12-
Ic, COLLECTOR CURRENT (AMP)
-,,c
Ic, COLLECTOR CURRENT (AMP)
MOTOfi?OLA Semiconductor Prod f~cts i?n c. @
-- ——.——
Ic, COLLECTOFI CUR RENT (AMP)
FI(3URE 9–CAPACITANCE
v“
300 ,2N:
------MJ:
200- 0.1 0.2 0,5 1.0 2.0 5.0 10 20 50 100
VR, R[;VERSE VOLTAGE (VOLTS)
.<
4
-
,.
FIGURE 2 – THERMAL RESPONSE –2N3771, 2N3772, 2N62!57
1.0
—D=0.5- —– – – -—~
0.5 I11111111 _ _ ~@Jc(t) = r(t) oIc !1i“:”!w~~$:,
0.1 ~I I II
{I!
! I I
III
0,3 I I .’. 1
I I I I I I I I I I I I I I II 1titti
k)J uI
+t,Ll II I 1111 II
EL 0,03
+
=0.02 ‘
Y‘SINGLE PULSE——
0.01 r
0.02 0.05 0.1 0.: 0
.. ~
‘‘+$$~?,,,,.,,t.~
,,,:<$”
FIGURE: 3 – ACTIVE-REGION SAFE OPERATING A~#–’2N377l ,2N3772, 2N6257
~a,. i~~.
L
sister that must be observed for reliable operation; i.e., the tran-
sistor must not be subjected to greater dissipation than the curves
indicate.
Figure 3is based upon JI:D EC registered Data. Second break-
down pulse limits are valid for duty cycles to 10% provided
TJ(pk) <200°C. TJ(pk) may be calculated frOm the data of
Figure 2. Using data OF Figure 2and the pulse power limits of
Figure 3, TJ(pk) will be found to be Iessthan TJ(max) for Pul~
widths of 1ms and less. When using Motorola transistors, it is
permissible to increase the pulse power limits until limited by
TJ(max).
SCOPE
tr, tf510ns ~AA
DUTY CYCLE= 1.0% -4 v
RBANO RCAR EVARIEU TO OBTAIN OESIREO CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
M305300 USEO ABOVE IB =100 mA
MSO61OO USED BELOW lB=l OomA
FI13U13E 5 – TURN-ON TIME
10
5.0
2.0
1.0
~
m0.5
E
F
-- 0.2
0.1
0.05
0.02
0.01
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
Ic, COLLECTORCURRENT[AMP)
@MOTOROLA Semiconductor Prt3d1wc*s Inc.
—-
UN IBASE IEPIBASE
2N3771, 2N3772, 2N6257 MJ3771 ,MJ3772, MJ6257
FIGURE 13 – TEMPERATURE COEFFICIENTS
ic, COLLECTOR CURRENT (AMP)
FIGURE 14 – COLLEC T(
-@
MOTOROLA Semiconductor F~r<>ducts Inc. —
BOX 20912 0 PHOENIX, ARIZONA 85036 .A5UBS[DZARY OF h40T0R0LA INC.
48w-2 PRINTED IN MA 1%72 lM%RIAL LITHO W630 10M .S 31~ R?
—.
—. ————-———
