DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. handbook, halfpage 3 Low level general purpose amplifiers in thick and thin-film circuits. 1 SYMBOL 1 d 2 s source(1) 3 g gate MAM385 Marking codes: BFR30: M1p. BFR31: M2p. DESCRIPTION drain(1) s 2 Top view PINNING - SOT23 PIN d g APPLICATIONS Fig.1 Simplified outline and symbol. Note CAUTION 1. Drain and source are interchangeable. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 25 V VGSO gate-source voltage open drain 25 V Ptot total power dissipation Tamb 40 C 250 mW IDSS drain current VGS = 0; VDS = 10 V BFR30 4 10 mA BFR31 1 5 mA BFR30 1 4 mS BFR31 1.5 4.5 mS yfs common-source transfer admittance 1997 Dec 05 ID = 1 mA; VDS = 10 V; f = 1 kHz 2 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VDS drain-source voltage VDGO drain-gate voltage VGSO gate-source voltage ID drain current IG forward gate current (DC) Ptot total power dissipation Tstg storage temperature Tj operating junction temperature MIN. MAX. UNIT 25 V open source 25 V open drain 25 V 10 mA 5 mA 250 mW 65 +150 C 150 C Tamb 40 C; note 1; see Fig.2 Note 1. Mounted on a ceramic substrate of 8 10 0.7 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Mounted on a ceramic substrate of 8 10 0.7 mm. MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 0 40 80 120 200 160 Tamb (C) Fig.2 Power derating curve. 1997 Dec 05 3 VALUE UNIT 430 K/W NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IGSS gate cut-off current VDS = 0; VGS = 10 V IDSS drain current VGS = 0; VDS = 10 V nA 4 10 mA 1 5 mA 0.7 3 V 0 1.3 V 4 V 2 V BFR30 5 V BFR31 2.5 V 1 4 mS 1.5 4.5 mS 0.5 mS 0.75 mS BFR30 40 S BFR31 25 S BFR30 20 S BFR31 15 S ID = 1 mA 4 pF ID = 0.2 nA 4 pF gate-source voltage ID = 1 mA; VDS = 10 V BFR30 BFR31 gate-source voltage ID = 50 A; VDS = 10 V BFR30 BFR31 VGSoff yfs gate-source cut-off voltage common-source transfer admittance BFR30 ID = 0.5 nA; VDS = 10 V ID = 1 mA; VDS = 10 V; f = 1 kHz; Tamb = 25 C BFR31 yfs common-source transfer admittance BFR30 ID = 200 A; VDS = 10 V; f = 1 kHz; Tamb = 25 C BFR31 yos yos Cis Crs Vn common source output admittance common source output admittance input capacitance feedback capacitance equivalent input noise voltage 1997 Dec 05 UNIT 0.2 BFR31 VGS MAX. BFR30 VGS MIN. ID = 1 mA; VDS = 10 V; f = 1 kHz ID = 200 A; VDS = 10 V; f = 1 kHz VDS = 10 V; f = 1 MHz VDS = 10 V; f = 1 MHz; Tamb = 25 C ID = 1 mA 1.5 pF ID = 200 A 1.5 pF 0.5 V ID = 200 A; VDS = 10 V; B = 0.6 to 100 Hz 4 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA657 10 MDA658 10 ID handbook, halfpage handbook, halfpage ID (mA) (mA) 8 8 max 6 6 4 4 VGS = 0 V -0.5 -1.0 typ 2 2 -1.5 -2.0 min 0 -4 -3 -2 -1 0 0 0 2 4 6 8 VGS (V) BFR30. VDS = 10 V; Tj = 25 C. 10 VDS (V) BFR30. Tj = 25 C. Fig.3 Input characteristics. Fig.4 Output characteristics; typical values. MDA659 5 ID (mA) MDA660 5 ID (mA) handbook, halfpage handbook, halfpage 4 4 VGS = 0 V max 3 3 2 2 -0.2 -0.4 typ -0.6 0 -5 -0.8 1 1 -1 -1.2 min -4 -3 -2 -1 0 0 0 VGS (V) BFR31. BFR31. VDS = 10 V; Tj = 25 C. Tj = 25 C. Fig.5 Input characteristics. 1997 Dec 05 2 4 6 8 10 VDS (V) Fig.6 Output characteristics; typical values. 5 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA661 6 MDA662 6 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 4 4 VGS = 0V -0.5 -0.2 -1.0 2 -0.4 2 -0.6 -1.5 -0.8 -1 -2.0 0 -1.2 0 25 50 75 100 Tj (C) 125 25 BFR30. VDS = 10 V. Fig.7 50 75 100 Tj (C) 125 BFR31. VDS = 10 V. Drain current as a function of junction temperature; typical values. Fig.8 Drain current as a function of junction temperature; typical values. MDA656 10 MDA663 -6 handbook, halfpage handbook, halfpage IGSS VGS(off) (V) (nA) 1 -4 10-1 -2 10-2 BFR30 BFR31 10-3 0 50 100 150 Tj (C) 0 200 0 2 4 6 8 10 IDSS (mA) VGS = 10 V; VDS = 0. ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 C. Fig.9 Fig.10 Gate-source cut-off voltage as a function of drain current; typical values. Gate cut-off current as a function of junction temperature; typical values. 1997 Dec 05 6 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA664 7.5 MDA665 75 handbook, halfpage handbook, halfpage yfs (mA/V) yos (A/V) 5 50 BFR31 BFR30 BFR30 BFR31 2.5 25 0 0 0 2 4 ID (mA) 6 0 VDS = 10 V; f = 1 kHz; Tamb = 25 C. 2 4 ID (mA) 6 VDS = 10 V; f = 1 kHz; Tamb = 25 C. Fig.11 Common source transfer admittance as a function of drain current; typical values. Fig.12 Common source output admittance as a function of drain current; typical values. MDA666 104 handbook, halfpage MDA667 5 handbook, halfpage Cis (pF) 4 |yos| (A/V) 103 3 2 102 (1) 1 (2) 10 0 BFR30 10 20 BFR31 30 VDS (V) 0 0 f = 1 kHz; Tamb = 25 C. (1) ID = 4 mA. (2) ID = 1 mA. -2 -3 -4 -5 VGS (V) VDS = 10 V; f = 1 MHz; Tamb = 25 C. Fig.13 Common source output admittance as a function of drain-source voltage; typical values. 1997 Dec 05 -1 Fig.14 Input capacitance as a function of gate-source voltage; typical values. 7 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA668 -1 Crs handbook, halfpage (pF) -0.8 -0.6 -0.4 -0.2 0 0 -1 -2 -3 -4 -5 VGS (V) VDS = 10 V; f = 1 MHz; Tamb = 25 C. Fig.15 Feedback capacitance as a function of gate-source voltage; typical values. MDA669 104 handbook, full pagewidth en (nV/ Hz) 103 102 10 (1) (2) 1 10 102 103 104 105 f (Hz) VDS = 10 V; Tamb = 25 C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA. Fig.16 Equivalent noise voltage source as a function of frequency; typical values. 1997 Dec 05 8 106 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA670 104 handbook, full pagewidth in (fA/ Hz) 103 102 (1) 10 (2) 1 10 102 103 104 105 f (Hz) VDS = 10 V; Tamb = 25 C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA. Fig.17 Equivalent noise current source as a function of frequency; typical values. 1997 Dec 05 9 106 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 1997 Dec 05 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 10 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1997 Dec 05 11 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1997 Dec 05 12 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp13 Date of release: 1997 Dec 05